2.3–21 GHz broadband and high linearity distributed low noise amplifier

This paper focuses on the design of a 2.3–21 GHz Distributed Low Noise Amplifier (LNA) with low noise figure (NF), high gain (S₂₁), and high linearity (IIP3) for broadband applications. This distributed amplifier (DA) includes S/C/X/Ku/K-band, which makes it very suitable for heterodyne receivers. The proposed DA uses a 0.18 μm GaAs pHEMT process (OMMIC ED02AH) in cascade architecture with lines adaptation and equalization of phase velocity techniques, to absorb their parasitic capacitances into the gate and drain transmission lines in order to achieve wide bandwidth and to enhance gain and linearity. The proposed broadband DA achieved an excellent gain in the flatness of 13.5 ± 0.2 dB, a low noise figure of 3.44 ± 1.12 dB, and a small group delay variation of ±19.721 ps over the range of 2.3–21 GHz. The input and output reflection coefficients S₁₁ and S₂₂ are less than −10 dB. The input compression point (P_1dB) and input third-order intercept point (IIP3) are −1.5 dBm and 11.5 dBm, respectively at 13 GHz. The dissipated power is 282 mW and the core layout size is 2.2 × 0.8 mm².     

Dual effect synergistically triggered Ce:(Y,Tb)3(Al,Mn)5O12 transparent ceramics enabling a high color-rendering index and excellent thermal stability for white LEDs

Ce:Y₃Al₅O₁₂ transparent ceramics (TCs) with appropriate emission light proportion and high thermal stability are significant to construct white light emitting diode devices with excellent chromaticity parameters. In this work, strategies of controlling crystal-field splitting around Ce³⁺ ion and doping orange-red emitting ion, were adopted to fabricate Ce:(Y,Tb)₃(Al,Mn)₅O₁₂ TCs via vacuum sintering technique. Notably, 85.4 % of the room-temperature luminescence intensity of the TC was retained at 150 °C, and the color rendering index was as high as 79.8. Furthermore, a 12 nm red shift and a 16.2 % increase of full width at half maximum were achieved owing to the synergistic effects of Tb³⁺ and Mn²⁺ ions. By combining TCs with a 460 nm blue chip, a warm white light with a low correlated color temperature of 4155 K was acquired. Meanwhile, the action mechanism of Tb³⁺ ion and the energy transfer between Ce³⁺ and Mn²⁺ ions were verified in prepared TCs.     

马尔可夫跳变线性系统最优控制的研究现状与进展

马尔可夫跳变线性系统（MJLS）是一种具有多个模态的随机系统，系统在各个模态之间的跳变转移由一组马尔可夫链来决定。MJLS模型因其在表示过程中可以产生突变而更能精确的描述实际工程应用中的系统。近年来，MJLS的最优控制问题成为了研究的热点，动态规划、极大值原理以及线性矩阵不等式等成为了解决此类问题的主流方法。本文对MJLS最优控制领域的研究现状进行了综述。分别对一般情况下、带有噪声的情况下、带有时滞的情况下以及某些特定情况下的MLJS最优控制问题的国内外研究现状进行论述。最后进行了总结并提出MJLS最优控制领域未来值得关注的研究方向。     

一款紧凑增强型可变阻抗电磁带隙结构

基于传统AI-EBG结构,提出了一种小尺寸的增强型电磁带隙结构,实现了从0.5~9.4 GHz的宽频带-40 dB噪声抑制深度,且下截止频率减少到数百MHz,可有效抑制多层PCB板间地弹噪声。文中同时研究了EBG结构在高速电路应用时的信号完整性问题,使用差分信号方案可改善信号完整性。     

An ideal host-guest system to accomplish high-performance greenish yellow and hybrid white organic light-emitting diodes

Greenish yellow organic light-emitting diodes (GYOLEDs) have steadily attracted researcher's attention since they are important to our life. However, their performance significantly lags behind compared with the three primary colors based OLEDs. Herein, for the first time, an ideal host-guest system has been demonstrated to accomplish high-performance phosphorescent GYOLEDs, where the guest concentration is as low as 2%. The GYOLED exhibits a forward-viewing power efficiency of 57.0 lm/W at 1000 cd/m², which is the highest among GYOLEDs. Besides, extremely low efficiency roll-off and voltages are achieved. The origin of the high performance is unveiled and it is found that the combined mechanisms of host-guest energy transfer and direct exciton formation on the guest are effective to furnish the greenish yellow emission. Then, by dint of this ideal host-guest system, a simplified but high-performance hybrid white OLED (WOLED) has been developed. The WOLED can exhibit an ultrahigh color rendering index (CRI) of 92, a maximum total efficiency of 27.5 lm/W and a low turn-on voltage of 2.5 V (1 cd/m²), unlocking a novel avenue to simultaneously achieve simplified structure, ultrahigh CRI (>90), high efficiency and low voltage.     

2.5GHz低相位噪声CMOS LC VCO的设计

用0 .35μm、一层多晶、四层金属、3.3V的标准全数字CMOS工艺设计了一个全集成的2 .5 GHz L C VCO,电路采用全差分互补负跨导结构以降低电路功耗和减少器件1/ f噪声的影响.为了减少高频噪声的影响,采用了在片L C滤波技术.可变电容采用增强型MOS可变电容,取得了2 3%的频率调节范围.采用单个16边形的对称片上螺旋电感,并在电感下加接地屏蔽层,从而减少芯片面积,优化Q值.取得了在离中心频率1MHz处- 118d Bc/ Hz的相位噪声性能.电源电压为3.3V时的功耗为4 m A.     

磁场天线的扭转振动及运动感应噪声研究

拖曳天线的运动感应电磁噪声对其收信深度及接收性能占据主导作用,其中横向振动与纵向振动是主要的,同时扭转振动也不可忽略.建立了磁场天线的扭转振动模型,得到了流体圆周切变力作用下磁场天线的扭转振动响应,分析了扭转振动感应电磁噪声的产生机理,给出了计算公式及仿真结果.研究结果为水下电磁噪声的深入研究提供了理论基础.     

连续波半主动雷达制导空空导弹截获跟踪距离计算

分析了连续波半主动雷达制导导弹导引头工作电磁环境和对武器系统攻击区的影响，建立了热噪声和杂波干扰环境下导引头截获距离方程，分析推导了直波泄漏干扰，地杂波干扰的计算公式，并在此基础上给出了导弹允许攻击区计算公式。     

有线电视系统干扰信号的产生及排除

通过对有线电视系统干扰信号产生原因的理论分析，提出在实际操作中的解决方案，以期达到使有线电视系统信号的输出更稳定、电视画面更清晰的目的。     

沙漠地区高精度地震资料处理技术

受静校正及各种类型干扰的影响,西部沙漠地区地震资料的高精度处理较东部地区有更大的难度。对准噶尔盆地中部Ⅱ区、Ⅲ区、Ⅳ区、顺托果勒等区块地震资料在振幅恢复、静校正、去除各类噪音、高精度速度分析及叠前、叠后子波处理等方面进行了大量的试验与研究,形成了较为系统的高精度地震资料处理技术,在西部不同区块地震资料处理中取得了较好的应用效果。