Silicon for thin-film transistors

We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation. The most important group of TFT capable semiconductors are the several modifications of silicon films: amorphous, nanocrystalline and microcrystalline. We summarize their TFT properties and their compatibility with foil substrate materials.     

Measurement of specimen charging in scanning electron microscopy with a kelvin probe

A vibrating Kelvin probe in form of a platinum wire loop is used to measure the surface potential U_s on electron-irradiated free-floating metal and insulator specimens as a function of electron energy E. This allows an accurate measurement of the critical electron energy E₂ for no charging. At energies below E₂, the positive charging increases with decreasing energy to U_s=2–5 eV at E=0.5 keV and switching off the collector bias of the Everhart-Thornley detector. A two-to threefold increase of U_s is observed when the bias is switched on. For E > E₂, the strong increase of a negative surface potential can be measured. Insulating films free-supported on a conductive substrate show a steep decrease to small positive and negative U_s when the film thickness becomes lower than the electron range at a critical energy E₃ > E₂. At insulating specimen the temporal decrease of charging can be measured when the electron beam is switched off.     

新产品——钢带增强聚乙烯螺旋波纹管

钢带增强聚乙烯螺旋波纹管是一种创新的埋地排水管,把钢材的高刚度、高强度和聚乙烯的柔韧、耐腐结合在一起,突出的优点是环刚度高和节约原材料.     

可膨胀波纹管技术在韦15-19井的应用

可膨胀管包括可膨胀实体管和可膨胀波纹管，主要用于在不减小井眼尺寸的情况下封堵各种复杂地层，对损坏套管进行补贴修复，作为各种井筒封隔器以及延长技术套管长度。实体管和波纹管两者膨胀机理不一样，相比之下，可膨胀波纹管技术具有膨胀工艺简单，作业周期短的优点，该技术一直由俄罗斯掌握。中国石化勘探开发研究院经过多年的潜心研究，终于形成了具有自主知识产权的可膨胀波纹管产品及其配套的工艺技术，新研制的可膨胀波纹管壁厚8mm，抗内压强度35MPa，抗外挤强度10MPa，并在江苏油田韦15—19井进行了漏层封堵现场试验，经过扩眼、管串下入、水力膨胀、机械膨胀等工艺后获得圆满成功，标志着我国已经打破了国外公司对该技术的垄断，填补了国内在该领域的技术空白。     

Significance of fluid regime in biological filtration

A dispersed flow model previously developed to study substrate utilization in unsaturated media was experimentally verified and its practical application was considered. For this purpose, measurements were made using tap water and a synthetic feed solution. The importance of the change in fluid regime as regards to the simultaneous transport and reaction within biological filters were demonstrated. The effect of drop formation and the breakage of liquid jets inside the filters on substrate utilization was also shown.     

材质对蜂窝纸板缓冲性能的影响

对两种不同材质的蜂窝纸板静态应力应变性能和动态缓冲结果进行了比较分析。讨论了蜂窝纸板力学性能对应变速度的敏感性及两种纸板的缓冲性能差异。缓冲试验结果表明。在不同的冲击应变率下蜂窝纸板的材质影响蜂窝纸板缓冲性能。     

Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition

We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied, the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates.     

Development of High Thermal Conductivity Aluminum Nitride Ceramic

AIN ceramics with densities varying from 3.18 to 3.30 g/cm³ and room-temperature thermal conductivities varying from 88 to 193 W/m K were produced. Different sintering conditions, packing powders, AIN powder sources, carbon additive, and sintering times were evaluated, and the key processing parameters which cause the differences in density and thermal conductivity were identified. SEM, TEM, and EDS were used to characterize the correlation between thermal conductivity, microstructure, and processing parameters. The important parameters which control the thermal conductivity of AIN ceramics are discussed.     

关于彩涂压型钢板构件设计中的选材问题

近年来 ,在彩涂压型钢板构件设计应用中 ,由于不重视、不了解如何合理选材 ,在实际工程的材料订货中也都不提出对材料性能的技术要求 ,致使供货材质、材性不能满足使用要求 ,存在降低彩板构件承载力或减少其使用寿命的隐患 ,应引起设计人员的注意。同时对当前如何按使用条件及材料供应条件合理地选定彩板材料的性能技术要求 ,包括基板钢材的级别及力学性能、板厚及公差控制要求、镀锌层质量与彩涂层类别以及参照的技术标准等 ,提出了一些建议 ,供设计应用参考。最后还对板的强度、厚度以及镀铝锌板的选用问题进行了讨论