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排序方式: 共有576条查询结果,搜索用时 15 毫秒
1.
采用超高真空电子束蒸发法制备了新型高 K栅介质-非晶 ZrO2薄膜. X射线光电子能谱 (XPS) 中 Zr3d5/2 和 Zr3d3/2 对应的结合能分别为 182.1eV和 184.3eV, Zr元素的主要存在形式为 Zr4+,说明薄膜由完全氧化的 ZrO2组成 ,并且纵向分布均一.扩展电阻法( SRP)显示 ZrO2薄膜的 电阻率在 108Ω@ cm以上,通过高分辨率透射电镜( HR- XTEM)可以观察 ZrO2/Si界面陡直,没有 界面反应产物 ,证明 600℃快速退火后 ZrO2薄膜是非晶结构.原子力显微镜( AFM)表征了薄膜的 表面粗糙度,所有样品表面都很平整,其中 600℃快速退火样品 (RTA)的 RMS为 0.480nm. 相似文献
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3.
ULSI中的铜互连线RC延迟 总被引:2,自引:0,他引:2
随着ULSI向深亚微米特征尺寸发展,互连引线成为ULSI向更高性能发展的主要限制因素。由互连引线引起的串扰噪音及RC延迟限制了ULSI的频率性能的提高,同时考虑到电迁移和功率损耗,人们开始寻找新的互连材料;低电阻率的铜互连材料和低介电常数介质的结合可以有效地发送互连线的性能,主要讨论了互连延迟的重要性以及发送和计算延迟的方法。 相似文献
4.
Veena Misra Xiaoli Xu Brian E. Hornung Richard T. Kuehn Donald S. Miles John R. Hauser Jimmie J. Wortman 《Journal of Electronic Materials》1996,25(3):527-535
In the present study, we have performed electrical characterization of oxides deposited via rapid thermal chemical vapor deposition using SiH4 and N2O. We have investigated the effect of temperature, pressure, and SiH4 to N2O ratio on the electrical and material properties of as-deposited films. We have found that as-deposited oxides deposited at low temperatures, low pressures, and with a low silane to nitrous oxide ratio of ~0.5% give good material and electrical properties. The as-deposited films are stoichiometric in nature and have high deposition rates. As-deposited films had very low Dit values, high breakdown fields, and excellent subthreshold swing. The leakage currents and metal oxide semiconductor field effect transistor current drive, although lower than thermal oxides, were found to be quite acceptable. We have also investigated the thickness dependence of the films and found that as the film thickness is reduced below 50Å, the reliability improves for all oxides including the silicon-rich deposited oxides. 相似文献
5.
Rainer Waser Tudor Baiatu# Karl-Heinz Härdtl 《Journal of the American Ceramic Society》1990,73(6):1645-1653
The rate of the resistance degradation of doped SrTiO3 ceramics is investigated as a function of various external and material parameters. The effects of the mutually interrelated parameters dc voltage, dc electric field, and thickness of the dielectric are described by power laws. Electron microscopic potential contrast studies show a Maxwell-Wagner polarization leading to a concentration of the electric field at the grain boundaries during the degradation. Based on this finding, the voltage step per grain boundary, ΔΘgb , is introduced as a rate-determining parameter which allows an explanation of the influence of the grain size on the degradation rate as well as the difference in the power laws for ceramic and single-crystal samples. 相似文献
6.
HUANG Ru WU HanMing KANG JinFeng XIAO DeYuan SHI XueLong AN Xia TIAN Yu WANG RunSheng ZHANG LiangLiang ZHANG Xing & WANG YangYuan 《中国科学F辑(英文版)》2009,(9):1491-1533
It is predicted that CMOS technology will probably enter into 22 nm node around 2012. Scaling of CMOS logic technology from 32 to 22 nm node meets more critical issues and needs some significant changes of the technology, as well as integration of the advanced processes. This paper will review the key processing technologies which can be potentially integrated into 22 nm and beyond technology nodes, including double patterning technology with high NA water immersion lithography and EUV lithography, new devi... 相似文献
7.
8.
Robert Withnall Jack Silver Paul G. Harris Terry G. Ireland Paul J. Marsh 《Journal of the Society for Information Display》2011,19(11):798-810
Abstract— The current status of AC powder electroluminescent (ACPEL) displays is reviewed with particular emphasis given to color and lifetime. The printing of the displays in forward and reverse architectures is also discussed, in addition to the fabrication of ACPEL displays with interdigitated electrodes, and different types of ACPEL phosphors and materials for back electrodes, transparent conducting electrodes, binders, and dielectrics are considered. Furthermore, shape conformable and highly flexible ACPEL displays are surveyed. 相似文献
9.
The influences of BaCu(B2O5) (BCB) addition on sintering, microstructure and microwave dielectric properties of Li2MgTi3O8 ceramics were investigated using X-ray diffractometry, scanning electron microscopy and microwave dielectric measurements.
The experimental results show that a small amount of BaCu(B2O5) addition can effectively reduce the sintering temperature to 900 °C, and induce only a limited degradation of the microwave
dielectric properties. Typically, the best microwave dielectric properties of ɛ
r=24.5, Q×f =24 622 GHz, τ
f=4.2×10−6 °C−1 are obtained for 1.0% BCB-doped Li2MgTi3O8 ceramics sintered at 900 °C for 3 h. The BCB-doped Li2MgTi3O8 ceramics can be compatible with Ag electrode, which may be a strong candidate for low temperature co-fired ceramics applications. 相似文献
10.
Thin SiO2 layers were deposited by atomic layer deposition (ALD) using either Bis-dimethylamino-silane (BDMAS: SiH2(N(CH3)2)2) or Tris-dimethylamino-silane (TDMAS: SiH(N(CH3)2)3) precursors. The purpose of this study is to evaluate these precursors for their suitability for ALD of hafnium (Hf)-silicate gate dielectrics. The advantages of these precursors are that the melting points and vapor pressures are moderate. The thickness of SiO2 deposited using ALD process is controlled by the number of growth cycles and the growth rate was different for each precursor, that for BDMAS being 1.5 times that for TDMAS at the same reactor pressure. The carbon impurity in the SiO2 film deposited using BDMAS was about half an order of magnitude less than that using for TDMAS. Furthermore, the carbon impurity was reduced to about the detection limit of secondary ion mass spectrometry after high temperature annealing at 1000 °C during 5 s. 相似文献