Improved quantum efficiency of Sr(Al,Si)5(O,N)7:Ce3+ by selection of Ce raw material

The luminescence properties of yellow-emitting Ce³⁺-doped Sr-containing sialon phosphor Sr(Al,Si)₅(O,N)₇:Ce³⁺ were notably improved by the Ce raw material selection. By changing the Ce raw material from oxides to nitrides or chlorides, the emission wavelength shifted to above 560 nm, which is beneficial for higher color rendering index white light-emitting diodes. This result from an increase in the covalency of the host crystal being associated with a decrease in the oxygen content. When Ce chloride was used, both the absorption and internal quantum efficiency increased, resulting in an increase in the external quantum efficiency up to 65%–72%. Inductively coupled plasma mass spectrometry, X-ray diffraction, and electron spin resonance measurements showed that the reason for the absorption increase is an increase in Ce³⁺ content and suppression of the generation of the second phase, and the reason for the increase in the internal quantum efficiency is a decrease in the host crystal absorption via suppression of anion vacancy generation. It was found that Ce chloride not only suppresses oxygen impurities but also acts as a flux that results in improved crystallinity.     

Magnetic effects of direct ion implantation of Mn and Fe into p-GaN

In p-GaN implanted with Mn (3×10¹⁶ cm⁻² at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely Ga_xMn_1−xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation are similar to those reported for Fe doping during epitaxial growth of GaN.     

氮化钛薄膜的高分辨AES谱和XPS谱研究

着重讨论了TiNx薄膜俄歇电子谱的定量分析方法和X射线光电子谱中线形的变化。利用已知组元强度定量分析技术和Ti的LMV俄歇电子峰，探讨TiNx薄膜中N含量的定量方法。由该方法给出的定量结果与X射线光电子谱定量结果相一致。同时，利用X射线光电子谱测定了TiN和Ti2N2p轨道的结合能。并针对Ti2p峰形随N含量的变化，给出新的解释。     

稀疏气泡流动的粒子跟踪测速技术研究

采用动态阈值技术实现了对气泡图像的正确分割，利用灰度加权方法提高了气泡颗粒的定位精度。根据稀疏气泡流动图像的特点，提出了一种新的基于相关的粒子跟踪测速算法（2-HPTV）。通过进行两时刻中围绕待研究气泡所取的两个小的诊断窗口的相关运算，成功实现了气泡颗粒的轨迹追踪。实验表明本文算法较传统的PIV技术在测速精度上有很大程度的提高，与4帧粒子跟踪测速算法相比，降低了对摄像机帧频的要求，具有较强的实用性。     

Impact of forward bias on electroluminescence efficiency in blue and green InGaN quantum well diodes: A comparative study

Electroluminescence (EL) spectral intensity in the high-brightness blue and green InGaN single-quantum-well (SQW) diodes has been comparatively studied over a wide temperature range and as a function of injection current. When the necessary forward bias conditions to get a certain current level are different, it is found that the anomalous EL quenching previously observed below 100 K for the SQW diodes strongly changes and shows a striking difference between the blue and green SQW diodes. This unusual EL evolution pattern is attributed to both internal and external fields, suggesting the importance of the internal piezoelectric field effects on the efficient carrier capture processes by localized tail states within the SQW under the presence of high-density misfit dislocations.     

Symmetric Structures of Ultrahard Materials

Diamond and BN have common relatively soft precursor structures that are hexagonal. Electronic structure calculations have now revealed subtle energy differences between the two materials. Another hard material, stishovite, also has a relatively soft precursor phase, quartz, and here again electronic structure calculations have given insight into the nature of the phase transformation. On the other hand, with boron-related materials, the main focus is to connect basic icosahedra structures to produce a hard material. The structural aspects of these materials are examined and possible consequences for low- and high-coordination ultrahard nitrides considered.     

Hydride Vapor Phase Epitaxy of GaN Thick Films by the Consecutive Deposition Process Using GaCl3

GaN buffer and main layers were grown by the conventional hydride vapor phase epitaxy technique using GaCl₃ consecutively. The deposited buffer layers were investigated by atomic force microscopy and X-ray analysis. To examine the behavior of the buffer layers at main layer growth temperature, heat treatment was conducted at 900°C. Based on the results of the buffer layer study, GaN thick films were grown at 1050°C. Optimum deposition conditions of buffer layer from the buffer and main layer studies generally coincided. On the φ scanning pattern, the GaN films grown on (0001) Al₂O₃ were single-crystalline. Band-edge emission dominated photoluminescence was observed at room temperature.     

植物油、脂肪酸和植物油甲酯在塔河稠油掺稀降黏中的应用评价

稠油由于富含沥青质、胶质等重质组分而具有很高的黏度，给稠油的开采和运输带来了很大的困难。降低稠油黏度进而改善其流动性成为一项十分重要的工作。以植物油、脂肪酸及植物油甲酯为掺稀介质，以塔河油田稠油为研究对象，考察对比了3种不同的掺稀介质对稠油的掺稀降黏效果。研究结果表明，3种掺稀介质对稠油具有良好的掺稀降黏效果，在同一掺稀比下，植物油甲酯对稠油的降黏效果最显著，其次是脂肪酸，再次是植物油。通过斑点试验考察了掺稀介质和稠油的相容性和体系稳定性。结果显示，植物油甲酯与稠油相容性和稳定性最好，脂肪酸和植物油与稠油的相容性和稳定性相对较差。     

Transport properties of critical dilute solutions

On the basis of the isomorphism of critical phenomena, the behavior of transport properties of binary mixtures in the vicinity of the vapor-liquid critical line is considered. In particular, the renormalization of the singularity of the thermal conductivity in dilute critical solutions has been analyzed in detail. It is shown that the behavior of the thermal conductivity is determined by the critical background, i.e., the fluctuation-induced regular part, which diverges at the critical point of a solvent.     

Investigation of transport phenomena in a hybrid ion exchange-electrodialysis system for the removal of copper ions

Hybrid ion exchange electrodialysis processes allow the removal of metal ions from dilute waste liquids and the recovery of more concentrated solutions. The work reported here was aimed at investigating the two steps in the treatment process, namely, adsorption of metal ions onto the packed bed of resin and electromigration (i.e., the transport of these ions in the complex system under the applied electrical field). The case of copper sulfate was investigated. Dowex resins with a cross-linking degree of 2 and 8% were used. The flux of copper through the resin bed and the current efficiency for ion transfer to the cathode compartment were determined as a function of potential gradient and copper ionic fraction in the bed. Apparent diffusion coefficients of Cu²⁺ in the overall system were deduced from the experimental data.