应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.     

Resistive switching characteristics of ZnO–graphene quantum dots and their use as an active component of an organic memory cell with one diode-one resistor architecture

We investigated the resistive switching characteristics of a polystyrene:ZnO–graphene quantum dots system and its potential application in a one diode-one resistor architecture of an organic memory cell. The log–log I–V plot and the temperature-variable I–V measurements revealed that the switching mechanism in a low-current state is closely related to thermally activated transport. The turn-on process was induced by a space-charge-limited current mechanism resulted from the ZnO–graphene quantum dots acting as charge trap sites, and charge transfer through filamentary path. The memory device with a diode presented a ∼10³ I_ON/I_OFF ratio, stable endurance cycles (10² cycles) and retention times (10⁴ s), and uniform cell-to-cell switching. The one diode-one resistor architecture can effectively reduce cross-talk issue and realize a cross bar array as large as ∼3 kbit in the readout margin estimation. Furthermore, a specific word was encoded using the standard ASCII character code.     

采用信息增益率的混合入侵检测模型设计

针对现有混合入侵检测模型仅定性选取特征而导致检测精度较低的问题，同时为了充分结合误用检测模型和异常检测模型的优势，提出一种采用信息增益率的混合入侵检测模型.首先，利用信息增益率定量地选择特征子集，最大程度地保留样本信息；其次，采用余弦时变粒子群算法确定支持向量机参数构建误用检测模型，使其更好地平衡粒子在全局和局部的搜索能力，然后，选取灰狼算法确定单类支持向量机参数构建异常检测模型，以此来提高对最优参数的搜索效率和精细程度，综合提高混合入侵检测模型对攻击的检测效果；最后，通过两种数据集进行仿真实验，验证了所提混合入侵检测模型具有较好的检测性能.     

Narrow-band emitters in LED backlights for liquid-crystal displays

Over the last decade, narrow-band emitters have been recognized as key enablers for light emitting diodes (LEDs) backlights in liquid-crystal displays (LCDs) by competing with other display technologies. Today, efforts have been devoted to the exploration of narrow-band green/red luminescent materials with high quantum efficiency and excellent stability to optimize the performance of LED backlights. This review first presents an overview of the significant progress made in the development of narrow-band emitters used in LED backlights for LCDs with the emphasis on the versatile materials databases from doped phosphors to luminescent II–VI, III-V semiconductor quantum dots, and the recent halide perovskites nanocrystals and bulk metal halides. Subsequently, the correlation of structure-luminescence properties, and the device performance optimization of these emitters have been analyzed. The focus is placed on summarizing and comparing the remarkable examples of outdated and new narrow-band luminescent materials as potential candidates in LED backlights. Finally, the outlooks and challenges in discovering new narrow-band emitters have been proposed.     

色散补偿及EDFA增益均衡的一体化

提出一种新的色散补偿及EDFA增益均衡的一体化方法。在10Gb／s的光通信系统和600km G652光纤中首次实现了基于16个碉啾光纤布拉格光栅(FBG)的色散补偿及掺饵光纤放大器(EDFA)的增益均衡。16个FBG的波长间隔为1．6nm，波长覆盖C波段1529～1556nm约27nm的范围。经600km G652光纤传输后，10Gb／s的NRZ码传输功率代价小于2dB。     

采用RF2607的WLAN自动增益控制设计

介绍了宽动态变化范围的新型可变增益放大器RF2607的特性、功能,给出了利用RF2607设计无线局域网(WLAN)通信中自动增益控制部分的实用电路.     

半导体量子点中极化子的有效质量

研究了半导体量子点中极化子的有效质量.采用改进的线性组合算符方法,导出在电子-体纵光学声子(LO)强耦合时抛物量子点中极化子的振动频率、相互作用能和有效质量随受限强度和电子-声子耦合强度的变化.对RbCl晶体量子点进行了数值计算,结果表明,量子点受限越强,半导体量子点中强耦合极化子的振动频率和有效质量就越大;极化子的相互作用能随受限强度的增加先急剧增加,当达到极值后,随受限强度的增加而急剧减少     

双级染料激光放大器泵浦能量分配的数值研究

用染料激光放大器的横向稳态泵浦理论，对不同的入射光能量选择不同的增益计算方法，研究了双级染料放大器的泵浦能量分配比例、泵浦光总能量和信号光能量大小对激光增益的影响。计算结果表明，对于其他参数确定的放大系统，存在着最佳的泵浦能量分配比例，可获得最大增益输出。通过自编程序的计算，可方便地找出特定系统泵浦能量分配比例的最佳值。     

分布式光纤拉曼放大器的增益平坦设计

介绍了在波分复用（WDM）系统中分布式光纤拉曼放大器（FRA）的理论分析模型。在此基础上，对增益平坦设计所需考虑的因素进行了分析；最后通过试验证明了它的有效性。     

无纵向电场分量离子波纹激光的小信号增益

在离子波纹摆动器中，改变电子束的入射方向，保证了离子波纹场的纵向分量为零，从而消除了纵向电场对离子波纹激光的不利影响。给出了束电子的运动轨迹，运用Madey定理计算了小振幅条件下该离子波纹激光的小信号增益。