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排序方式: 共有361条查询结果,搜索用时 15 毫秒
1.
自旋电子学指通过控制和利用电子自旋(而不是电荷)获得一系列新颖性能的研究领域。自旋电子器件已经成功地应用于计算机硬盘驱动器和磁性随机存储器,对IT行业的发展产生了深远的影响。这些应用都是基于自旋极化传输效应,即具有固定自旋取向的电子穿过磁性异质结所发生的相关效应。目前,在将微波和自旋极化传输联系起来的自旋器件中的自旋动力学研究,为研制尺寸远远小于微波波长的新型微波器件提供了巨大的潜能。在这篇综述中,首先简单地介绍了自旋器件的概念;接着研究了微波实验来研究自旋电子器件的微波辅助翻转和自旋泵浦现象。前者将能够开发出高密度的计算机硬盘,而后者,结合直接电子检测技术,将能够实现小型化的无源微波探测器。 相似文献
2.
Kai-Bin Jiang Wei-Qiang Huang Tian-Tian Song Pei-Xuan Wu Wen-Fei Wang Qing-Song Chen Ming-Sheng Wang Guo-Cong Guo 《Advanced functional materials》2023,33(43):2304351
Construction of heterojunctions to photocatalysts is one of the most promising approaches to improve charge separation efficiency; however, the established constructing processes usually require high-temperature conditions and/or the adding of highly concentrated or expensive exotic species, and the improvement of effective contact and charge exchange between heterojunction components remains a problem. This work proposes an unprecedented “photobreeding” method and realizes the direct growth of Zn nanowires and Mott–Schottky heterojunctions from ZnS or viologen-coated ZnS microspheres through a photochemical reaction at room temperature without external species, while demonstrating the hypothesis proposed 140 years ago on the formation of Zn in the photochromic process of ZnS. After photobreeding of the heterojunctions, the hydrogen production efficiency of the photocatalysts increases by 2 orders of magnitude. This inexpensive, facile and efficient synthetic method will find applications in H2 production, organic synthesis, CO2 reduction, nitrogen fixation, and so on. 相似文献
3.
Ziyi Guo Junyao Zhang Xu Liu Lu Wang Lize Xiong Jia Huang 《Advanced functional materials》2023,33(46):2305508
Both photodetectors (PDs) and optoelectronic synaptic devices (OSDs) are optoelectronic devices converting light signals into electrical responses. Optoelectronic devices based on organic semiconductors and halide perovskites have aroused tremendous research interest owing to their exceptional optical/electrical characteristics and low-cost processability. The heterojunction formed between organic semiconductors and halide perovskites can modify the exciton dissociation/recombination efficiency and modulate the charge-trapping effect. Consequently, organic semiconductor/halide perovskite heterojunctions can endow PDs and OSDs with high photo responsivity and the ability to simulate synaptic functions respectively, making them appropriate for the development of energy-efficient artificial visual systems with sensory and recognition functions. This article summarizes the recent advances in this research field. The physical/chemical properties and preparation methods of organic semiconductor/halide perovskite heterojunctions are briefly introduced. Then the development of PDs and OSDs based on organic semiconductor/halide perovskite heterojunctions, as well as their innovative applications, are systematically presented. Finally, some prospective challenges and probable strategies for the future development of optoelectronic devices based on organic semiconductor/halide perovskite heterojunctions are discussed. 相似文献
4.
Jibo Qin Yibo Dou Jianchi Zhou Victor M. Candelario Henrik Rasmus Andersen Claus Hélix-Nielsen Wenjing Zhang 《Advanced functional materials》2023,33(28):2214839
The conversion of waste plastic into high-value-added chemicals is regarded as a promising approach for relieving global plastic pollution and contributing to the circular economy. Herein, a partial calcination strategy is developed to fabricate a zinc oxide/UiO66-NH2 (ZnO/UiO66-NH2) heterojunction, in which ZnO is encapsulated in porous UiO66-NH2 for the photocatalytic valorization of plastic. This strategy preserves the framework structure of UiO66-NH2, thus enabling the formation of ZnO with ultra-small size distributed inside the skeleton. The synergistic effect of the obtained ZnO/UiO66-NH2 heterojunction facilitates providing an efficient channel for carrier/mass transfer and guarantees structural stability. As a result, ZnO/UiO66-NH2 exhibits high activity for converting polylactic acid (PLA) and polyvinyl chloride (PVC) into acetic acid, coupled with H2 production. This work provides a feasible strategy for rationally designing heterojunction photocatalysts, as well as an insight into understanding the process of photocatalytic valorization of plastic. 相似文献
5.
Alireza Kargar Supanee Sukrittanon Chang Zhou Yun Goo Ro Xiaoqing Pan Shadi A. Dayeh Charles W. Tu Sungho Jin 《Small (Weinheim an der Bergstrasse, Germany)》2017,13(21)
The growth and characterization of an n‐GaP/i‐GaNP/p+‐GaP thin film heterojunction synthesized using a gas‐source molecular beam epitaxy (MBE) method, and its application for efficient solar‐driven water oxidation is reported. The TiO2/Ni passivated n‐GaP/i‐GaNP/p+‐GaP thin film heterojunction provides much higher photoanodic performance in 1 m KOH solution than the TiO2/Ni‐coated n‐GaP substrate, leading to much lower onset potential and much higher photocurrent. There is a significant photoanodic potential shift of 764 mV at a photocurrent of 0.34 mA cm?2, leading to an onset potential of ≈0.4 V versus reversible hydrogen electrode (RHE) at 0.34 mA cm?2 for the heterojunction. The photocurrent at the water oxidation potential (1.23 V vs RHE) is 1.46 and 7.26 mA cm?2 for the coated n‐GaP and n‐GaP/i‐GaNP/p+‐GaP photoanodes, respectively. The passivated heterojunction offers a maximum applied bias photon‐to‐current efficiency (ABPE) of 1.9% while the ABPE of the coated n‐GaP sample is almost zero. Furthermore, the coated n‐GaP/i‐GaNP/p+‐GaP heterojunction photoanode provides a broad absorption spectrum up to ≈620 nm with incident photon‐to‐current efficiencies (IPCEs) of over 40% from ≈400 to ≈560 nm. The high low‐bias performance and broad absorption of the wide‐bandgap GaP/GaNP heterojunctions render them as a promising photoanode material for tandem photoelectrochemical (PEC) cells to carry out overall solar water splitting. 相似文献
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We have investigated, as a function of indium content x, the galvanomagnetic and Shubnikov de Haas (SdH) properties of two-dimensional
electron gases (2DEG) formed at lattice matched, strain relaxed InAlAs/InGaAs heterojunctions. These were grown by molecular
beam epitaxy on GaAs misoriented substrates with a two degree offcut toward the nearest (110) plane. Variable temperature
resistivity and Hall measurements indicate an increase in the electron sheet density ns from 0.78×1012cm−2 for x=0.15 to 1.80×1012 cm−2 for x=0.40 at 300K, and from 0.75×1012cm−2 to 1.67×1012cm−2 at T=1.6K. The room temperature electron mobility, measured along the in plane [110], direction is independent of indium
content and equals approximately 9500 cm2/Vs. For T<50K, the mobility is independent of temperature decreasing with increasing x from 82000 cm2/Vs for x=0.15 to 33000 cm2/Vs for x=0.40. The ratios (τt/τq) at 1.6K between the electron relaxation time τt and the single particle relaxation time τq, for the strain relaxed specimens, as well as for pseudomorphically strained Al0.35Ga0.65As/In0.15Ga0.85As structures grown on GaAs substrates, and In0.52Al0.48As/In0.53Ga0.47As heterostructures grown lattice matched on InP substrates. Such a study indicates the presence of inhomogeneities in the
2DEGs of the strain relaxed specimens which appear to be related to the process of strain relaxation. Such inhomogeneities,
however, have little effect on the electron relaxation time τt which, at low temperatures, is limited principally by alloy scattering. 相似文献