Modeling ion implantation of HgCdTe

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n⁺/n^-/p, where the n⁺ region is near the surface and roughly coincides with the implant damage, the n^- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.     

Investigation of the oxidation behavior of Mg-implanted steel samples

Mg-implanted AISI 321 steel samples (implantation-energy 40 keV, dose: 2 * 10¹⁷ ions/cm²), were oxidized in air in the temperature region 350–650°C for several days. Nuclear Reaction Analysis (NRA) and Rutherford Backscattering Spectroscopy (RBS) were used to determine the oxygen concentration in the oxidized samples. An enhancement of the oxidation rate on the implanted material in comparison to the non-implanted was observed at high temperatures. It was demonstrated that the oxidation of Mg-implanted steel proceeds by two different mechanisms, at 350–550°C on the one hand and at 550–650°C on the other. The magnesium-depth distribution, determined by NRA (using the²⁴Mg(, P)²⁷Al reaction), RBS and X-ray Photoelectron Spectroscopy (XPS) also indicated a diffusion of the element at high temperatures confirming these assumptions. Scanning Electron Microscopy (SEM) and Scanning Transmission Electron Microscopy (STEM) were applied to investigate the surface morphology and to explain the influence of Mg-ion implantation on the oxidation behavior of AISI 321 austenitic stainless steel.     

用二次离子质谱和扩展电阻探针技术测量硅中注入硼的深度分布及扩展电阻探针技术分辨率的估算

利用二次离子质谱和扩展电阻探针技术测量了硅中注入硼的深度分布 .在适当的测量深度 ,用扩展电阻探针技术测得的结果对二次离子质谱技术测量的结果进行了标定 ,从而得到硅片中硼原子的深度分布 .用近似模型估算了扩展电阻探针针尖半径对测试分辨率的影响 .若探针针尖半径为r0 ,测量斜面的角度为 ξ ,在用扩展电阻探针技术测量载流子浓度的深度分布时 ,可以近似认为深度分辨率为 7 86r0 sinξ.还定性讨论了样品表面耗尽层对扩展电阻探针技术的影响.     

多能碳离子注入纯铁研究

利用离子注入表面优化技术,在不同温度下,采用多能量叠加方式将碳离子注入纯铁表面;利用XRD和AES等技术分析了表面改性层的相结构以及元素的分布;利用电化学极化法测试了注入样品的抗腐蚀性能.结果表明,573 K时注入的碳离子比373 K时注入的碳离子深;纯铁表面改性层有Fe2C、Fe3C新相生成;离子注入碳提高了纯铁表面抗电化学腐蚀的能力.     

Optical and electrical properties of Al2O3 films containing silicon nanocrystals

Optical, electrical, and structural properties of Al₂O₃ films subjected to silicon-ion implantation and annealing were investigated by means of photoluminescence measurements, current-voltage measurements and transmission electron microscopy. Transmission electron microscopy revealed that silicon nanocrystals were epitaxially formed in ϑ-Al₂O₃. Visible photolum inescence was observed, for the first time, from Al₂O₃ films containing silicon nanocrystals. Observed visible photoluminescence seems to be related to quantum size effects in silicon nanocrystals as well as localized radiative recombination centers located at the interface between silicon nanocrystals and matrix, similar to porous Si and other Si nanostructures. The conduction mechanism in the samples was studied by using dc current-voltage measurements. The conduction properties depend on temperature and applied electric fields. The conduction behavior in low electric fields consists of thermally activated region dominated by the Schottky conduction and nonthermally activated region in which carrier transport is controlled by space-charge-limited currents. The conduction behavior under relatively high electric fields is almost independent of temperature and well fitted by space-charge-limited conduction.     

P-阱、沟道区离子注入分布特性的测试分析与计算机模拟

CMOS集成电路在LSI、VLSI中占有显著地位,它是当今乃至今后一段时期集成电路发展的主流。研究CMOSIC沟道、P~-阱注入杂质的分布和再分布规律,对于指导工艺实践和提高电路性能具有现实意义。     

金属镍高温氧化机理及稀土元素效应研究

对纯镍及其表面离子注钇试样在1000℃空气中的恒温氧化和循环氧化行为进行了研究。用扫描电镜(SEM)和透射电镜(TEM)对氧化膜的表面形貌及结构进行了观测。此外，用声发射(AE)技术研究了氧化膜／基体界面上缺陷的分布情况，并用激光拉曼(Raman)谱对注钇引起的膜内应力变化进行了测量。结果表明：离子注钇降低了NiO氧化膜的生长速率，提高了镍的抗氧化性能；离子注钇减小了表面NiO的晶粒尺寸，降低了膜内压应力水平；离子注钇还减小了氧化膜／基体界面缺陷的平均尺寸和数目，因而极大地提高了镍表面NiO氧化膜的粘附性和保护性。     

57Fe-ion implantation in pulse laser deposited La0.75Ca0.25MnO3 films: Conversion electron Mössbauer spectroscopy and X-ray diffraction studies

Oriented La_0.75Ca_0.25MnO₃ (LCMO) films have been deposited by pulsed laser deposition (PLD) method on (100) LaAlO₃ substrates. Ion-beam technique is used to introduce a very low concentration of⁵⁷Fe in LCMO film. The deposited films were subjected to 100 keV⁵⁷Fe⁺ implantation with different fluences at room temperature. The main motivation of this work was to study the influence of implantation on the transport mechanism in materials exhibiting colossal magnetoresistance (CMR) property. It is observed that Fe implantation drastically affects the structural and magneto-transport properties. The samples were characterized using the X-ray diffraction (XRD) technique, conversion electron Mössbauer spectroscopy (CEMS) and resistance temperature (R-T) measurements.     

Current transport in fluorine implanted GaAs

Effects of fluorine implantation in GaAs have been investigated by electrical characterization. Ion implantation at 100 keV energy was conducted with doses of 10¹¹ and 10¹²/cm². The effect of fluorine implantation on current-voltage (I-V) characteristics of Schottky diodes was significant. Carrier compensation was observed after implantation by the improved I-V characteristics. The lower dose implanted samples showed thermionic emission dominated characteristics in the measurement temperature range of 300 to 100K. The starting wafer and the low dose implanted samples after rapid thermal annealing (RTA) showed similar I-V properties with excess current in the lower temperature range dominated by recombination. The higher dose implanted samples showed increased excess current in the whole temperature range which may result from the severe damage-induced surface recombination. These samples after RTA treatment did not recover from implantation damage as in the low dose implantation case. However, very good I-V characteristics were seen in the higher dose implanted samples after RTA. The influence of the higher dose ion implantation was to produce more thermal stability. The results show the potential application of fluorine implantation in GaAs device fabrication.