Deposition,opto-electronic and structural characterization of polymorphous silicon thin films to be applied in a solar cell structure

In this study we analyze the optoelectronic properties and structural characterization of hydrogenated polymorphous silicon thin films as a function of the deposition parameters. The films were grown by plasma enhanced chemical vapor deposition (PECVD) using a gas mixture of argon (Ar), hydrogen (H₂) and dichlorosilane (SiH₂Cl₂). High-resolution transmission electron microscopy images and Raman measurements confirmed the existence of very different internal structures (crystalline fractions from 12% to 54%) depending on the growth parameters. Variations of as much as one order of magnitude were observed in both the photoconductivity and effective absorption coefficient between the samples deposited with different dichlorosilane/hydrogen flow rate ratios. The optical and transport properties of these films depend strongly on their structural characteristics, in particular the average size and densities of silicon nanocrystals embedded in the amorphous silicon matrix. From these results we propose an intrinsic polymorphous silicon bandgap grading thin film to be applied in a p–i–n junction solar cell structure. The different parts of the solar cell structure were proposed based on the experimental optoelectronic properties of the pm-Si:H thin films studied in this work.     

Structural and optical properties of CdTe-nanocrystals thin films grown by chemical synthesis

By mans of a chemical synthesis technique stoichiometric CdTe-nanocrystals thin films were prepared on glass substrates at 70 °C. First, Cd(OH)₂ films were deposited on glass substrates, then these films were immersed in a growing solution prepared by dissolution of Te in hydroxymethane sulfinic acid to obtain CdTe. The structural analysis indicates that CdTe thin films have a zinc-blende structure. The average nanocrystal size was 19.4 nm and the thickness of the films 170 nm. The Raman characterization shows the presence of the longitudinal optical mode and their second order mode, which indicates a good crystalline quality. The optical transmittance was less than 5% in the visible region (400–700 nm). The compositional characterization indicates that CdTe films grew with Te excess.     

Quantitative investigation of electromechanical coupling of potassium sodium niobate-based thin films

High-performance environment-friendly piezoelectric potassium sodium niobate (KNN)-based thin films have been emerged as promising lead-free candidates, while their substrate-dependent piezoelectricity faces the lack of high-quality information due to restraints in measurements. Although piezoresponse force microscopy (PFM) is a potential measuring tool, still its regular mode is not considered as a reliable characterization method for quantification. After combining machine-learning enabled analysis using PFM datasets, it is possible to measure piezoelectric properties quantitatively. Here we utilized advanced PFM technology empowered by machine learning to measure and compare the piezoelectricity of KNN based thin films on different substrates. The results provide a better understanding of the relationship between structures and piezoelectric properties of the thin films.     

Mechanical properties of graphene films enhanced by homo-telechelic functionalized polymer fillers via π–π stacking interactions

Most researches on graphene/polymer composites are focusing on improving the mechanical and electrical properties of polymers at low graphene content instead of paying attention to constructing graphene’s macroscopic structures. In current study the homo-telechelic functionalized polyethylene glycols (FPEGs) were tailored with π-orbital-rich groups (namely phenyl, pyrene and di-pyrene) via esterification reactions, which enhanced the interaction between polyethylene glycol (PEG) molecules and chemical reduced graphene oxide (RGO) sheets. The π–π stacking interactions between graphene sheets and π-orbital-rich groups endowed the composite films with enhanced tensile strength and tunable electrical conductivity. The formation of graphene network structure mediated by the FPEGs fillers via π–π stacking non-covalent interactions should account for the experimental results. The experimental investigations were also complemented with theoretical calculation using a density functional theory. Atomic force microscope (AFM), scanning electron microscope (SEM), X-ray diffraction (XRD), nuclear magnetic resonance (NMR), thermal gravimetric analysis (TGA), UV–vis and fluorescence spectroscopy were used to monitor the step-wise preparation of graphene composite films.     

新型高K栅介质ZrO2薄膜材料的制备及表征

采用超高真空电子束蒸发法制备了新型高 K栅介质-非晶 ZrO2薄膜. X射线光电子能谱 (XPS) 中 Zr3d5/2 和 Zr3d3/2 对应的结合能分别为 182.1eV和 184.3eV, Zr元素的主要存在形式为 Zr4+,说明薄膜由完全氧化的 ZrO2组成 ,并且纵向分布均一.扩展电阻法( SRP)显示 ZrO2薄膜的 电阻率在 108Ω@ cm以上,通过高分辨率透射电镜( HR- XTEM)可以观察 ZrO2/Si界面陡直,没有 界面反应产物 ,证明 600℃快速退火后 ZrO2薄膜是非晶结构.原子力显微镜( AFM)表征了薄膜的 表面粗糙度,所有样品表面都很平整,其中 600℃快速退火样品 (RTA)的 RMS为 0.480nm.     

Effect of Sb implantation on copper silicides formation and morphology after annealing of Cu/Si structures

In this work, the solid state reaction between a thin film of copper and silicon has been studied using Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy and microprobe analysis. Cu films of 400 and 900 Å thicknesses are thermally evaporated on Si(1 1 1) substrates, part of them had previously been implanted with antimony ions of 5×10¹⁴ or 5×10¹⁵ at. cm⁻² doses. The samples are heat-treated in vacuum at temperatures in the range 200–700 °C for various times. The results show the growth and formation of Cu₃Si and Cu₄Si silicides under crystallites shape dispatched on the sample surface, independently of the implantation dose. On the other hand, it is established that the copper layer is less and less consumed as the antimony dose increases, resulting in the accumulation of Sb⁺ ions at silicide/Si interface and in the silicide layer close to surface. The exposure of samples to air at room temperature shows the stability of Cu₄Si phase whereas the Cu₃Si silicide disappears to the benefit of the silicon dioxide formation. The observed phenomena are discussed.     

Measurement Method of the Thickness Uniformity for Polymer Films

Several methods for investigating the thickness uniformity of polymer thin films are presented as well their measurement principles.A comparison of these experimental methods is given.The cylindrical lightwave feflection method is found to can obtain the thickness distribution along a certain direction.It is simple and suitable method to evaluate the film thickness uniformity.     

Ionic transport in amorphous anodic titania stabilised by incorporation of silicon species

Incorporation of silicon species from an alloy substrate into anodic titania is shown to stabilise the structure of the film, facilitating investigation of the ionic transport processes in amorphous titania grown at high efficiency. Thus, an amorphous anodic film developed on a sputtering-deposited Ti-6 at.%Si alloy formed to 100 V in phosphoric acid electrolyte in contrast to a partially crystalline film developed on relatively pure titanium at <20 V. Silicon species, which are immobile and act as marker species in the growing film, are present in the inner 58% of the film thickness. Evidently, the film material forms simultaneously at the film/electrolyte and alloy/film interfaces by co-operative transport of cations and anions, as is usual in amorphous anodic oxides. The phosphate anions incorporated from the electrolyte migrate inward at 0.34 times the rate of O²⁻ ions and hence are present in the outer 62% of the film thickness.