Recension des écrits sur l'impact des contacts sexuels précoces sur les hommes.

A review of the literature on the impact of sexual contacts between adults and boys reveals the existence of two principal outcomes: 1) some participants develop various disorders once in adulthood, such as behavioural problems, sexual disorders, or personality problems; 2) some participants do not present with any major disorders in the long run. These different outcomes may be associated with several moderating variables related to the sexual contacts, such as the level of coercion at the time of these contacts, the bond between the child and the adult, or the context of the sexual relation. However, the conclusions relating to the relations between early sexual contacts with adults and subsequent problems of adaptation in adulthood are difficult to determine. This is because of various methodological problems associated with relevant studies (i.e., definition of these contacts, nature of the sample, method evaluation, statistical analyses). In this article, we propose certain avenues of research that may help clarify this problem. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

叠盖电极技术在SPRITE 探测器上的应用

文中主要介绍了叠盖电极技术在SPRITE探测器上的实际应用，并给出了具体实验结果。选择适当的叠盖电极尺寸可以使SPRITE的响应率Rυ提高一倍以上，探测率D^*普遍提高30％左右，高的可达80％。实验结果表明，叠盖电极技术明显地提高了SPRITE器件的性能，是一种简便的提高SPRITE性能的新途径。     

InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier

Significant reduction of the contact resistance of In_0.7Ga_0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W₂N barrier layer between the Ni layer and W layer. The In_0.7Ga_0.3 As/Ni/W₂N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C. The polycrystalline W₂N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and an increase in the total area of the In_xGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance.     

Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².     

一种新型背面接触式H~+-ISFET

简要地介绍了氢离子敏场效应晶体管(H~+-ISFET)的基本结构和工作原理,提出了一种新型背面接触式H~+-ISFET。对该结构在版图、工艺设计中的有关问题,进行了探讨。最后指出:它在pH值的测量中有较好的实用价值。     

Nondestructive characterization of the mechanical strength of diffusion bonds. II. Application of a quasi-static spring model

It has been shown that the acoustic response of imperfect interfaces may be described by a quasi-static spring model. In the present paper, experimental data on the geometry of the contacts between two diffusion-bonded blocks have been used to determine the spring stiffness of such interfaces which have been correlated with experimentally determined ultrasonic reflection coefficients. The correlation between the theoretical reflection coefficient and the spring stiffness was found to be in excellent agreement with experimentally-observed values, if the disbonds are of infinitesimally small thickness. For disbonds of finite thickness, the agreement is less satisfactory. Reasons for the discrepancy in the latter case are unknown at the present time.     

Contributions to the Ohmic Drop in the Electrolysis of ZnCl2 in a Molten Chloride Electrolyte

The electrowinning of zinc from zinc chloride with a molten chloride electrolyte was investigated. The electrolysis of zinc chloride shows ohmic limitations. The energy consumption is to a large extent determined by the anodic reaction, the evolution of chlorine. The chlorine gas plume was visualised in a see-through furnace and images were analysed to determine the plume angle. This parameter serves as an input parameter for a model to determine the ohmic contributions of the electrolyte, the plume and a layer of chlorine bubbles sticking to the anode, as well as the plume velocity. The results indicate that the major contribution (60%) to the ohmic drop is due to a stagnant layer of bubbles growing and sticking to the anode, thereby decreasing the effective anode area by coverage. The plume velocity influences coverage characteristics to some extent, which influences the ohmic drop.     

Nickel foam and carbon felt applications for sodium polysulfide/bromine redox flow battery electrodes

The first use of nickel foam (NF) as electrocatalytic negative electrode in a polysulfide/bromine battery (PSB) is described. The performance of a PSB employing NF and polyacrylonitrile (PAN)-based carbon felt (CF) as negative and positive electrode materials, respectively, was evaluated by constant current charge-discharge tests in a single cell. Charge/discharge curves of the cell, positive and negative electrodes show that the rapid fall in cell voltage is due to the drop of positive potential caused by depletion of Br₂ dissolved in the catholyte at the end of discharge. Cell voltage efficiency was limited by the relatively high internal ohmic resistance drop (iR drop). Polarization curves indicated that both NF and CF have excellent catalytic activity for the positive and negative redox reactions of PSB. The average energy efficiency of the single cell designed in this work could be as high as 77.2% at 40 mA cm⁻² during 48 charge-discharge cycles.     

Al金属多晶硅纳米膜欧姆接触的制作

利用低压化学气相淀积法（LPCVD）在表面有热氧化二氧化硅的（100）硅衬底上生长80nm厚多晶硅纳米膜,并对其界面进行表征.制作出单层Al金属的欧姆接触样品,在不同退火温度条件下对样片的电阻进行测量.结果表明,退火使欧姆接触的电阻率降低,接触电阻率可达到2.41×10-3Ω.cm2.     

Analysis of the abnormal resistance in AlGaN/GaN heterostructure＇s ohmic contact tests

Ti/Al/Ti/Au and Ti/Al/Ni/Au ohmic contacts were fabricated on AlGaN/GaN heterostructure under different temperatures of rapid thermal processing （RTP）. Since abnormal resistance values were observed during the contact resistance testing,the surface morphology and contact borders of the samples were analyzed to determine the physical mechanism. Such abnormal phenomenon is found to originate from cracking of the AlGaN layer during RTP,flowing of Ti/Al metallic liquid along the crevices,and continuous reaction of the metallic liquid with AlGaN/GaN. Such processes result in abnormal conduction channels. The possible mechanism of the crevice formation was discussed,and the possible solutions to avoid the crevices were proposed.