首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   553篇
  免费   101篇
  国内免费   53篇
综合类   40篇
化学工业   11篇
金属工艺   5篇
机械仪表   4篇
轻工业   3篇
武器工业   17篇
无线电   522篇
一般工业技术   92篇
自动化技术   13篇
  2024年   2篇
  2023年   6篇
  2022年   5篇
  2021年   14篇
  2020年   19篇
  2019年   14篇
  2018年   19篇
  2017年   27篇
  2016年   22篇
  2015年   31篇
  2014年   32篇
  2013年   26篇
  2012年   57篇
  2011年   45篇
  2010年   39篇
  2009年   20篇
  2008年   43篇
  2007年   42篇
  2006年   39篇
  2005年   50篇
  2004年   82篇
  2003年   36篇
  2002年   5篇
  2001年   5篇
  2000年   6篇
  1999年   6篇
  1998年   1篇
  1997年   3篇
  1994年   2篇
  1993年   3篇
  1992年   1篇
  1991年   1篇
  1989年   1篇
  1988年   2篇
  1977年   1篇
排序方式: 共有707条查询结果,搜索用时 15 毫秒
1.
Hybrid organic–inorganic perovskites (HOIPs), in particular 3D HOIPs, have demonstrated remarkable properties, including ultralong charge‐carrier diffusion lengths, high dielectric constants, low trap densities, tunable absorption and emission wavelengths, strong spin–orbit coupling, and large Rashba splitting. These superior properties have generated intensive research interest in HOIPs for high‐performance optoelectronics and spintronics. Here, 3D hybrid organic–inorganic perovskites that implant chirality through introducing the chiral methylammonium cation are demonstrated. Based on structural optimization, phonon spectra, formation energy, and ab initio molecular dynamics simulations, it is found that the chirality of the chiral cations can be successfully transferred to the framework of 3D HOIPs, and the resulting 3D chiral HOIPs are both kinetically and thermodynamically stable. Combining chirality with the impressive optical, electrical, and spintronic properties of 3D perovskites, 3D chiral perovskites is of great interest in the fields of piezoelectricity, pyroelectricity, ferroelectricity, topological quantum engineering, circularly polarized optoelectronics, and spintronics.  相似文献   
2.
Poly[2‐methoxy‐5‐(2′‐ethyl‐hexyloxy)‐para‐phenylene vinylene] (MEH‐PPV)/silica nanoparticle hybrid films were prepared and characterised. Three kinds of materials were compared: parent MEH‐PPV, MEH‐PPV/silica (hybrid A films), and MEH‐PPV/coupling agent MSMA/silica (hybrid B films), in which MSMA is 3‐(trimethoxysilyl) propyl methacrylate. It was found that the hybrid B films could significantly prevent macrophase separation, as evidenced by scanning electron and fluorescence microscopy. Furthermore, the thermal characteristics of the hybrid films were largely improved in comparison with the parent MEH‐PPV. The UV‐visible absorption spectra suggested that the incorporation of MSMA‐modified silica into MEH‐PPV could confine the polymer chain between nanoparticles and thus increase the conjugation length. The photoluminescence (PL) studies also indicated enhancement of the PL intensity and quantum efficiency by incorporating just 2 wt% of MSMA‐modified silica into MEH‐PPV. However, hybrid A films did not show such enhancement of optoelectronic properties as the hybrid B films. The present study suggests the importance of the interface between the luminescent organic polymers and the inorganic silica on morphology and optoelectronic properties. Copyright © 2004 Society of Chemical Industry  相似文献   
3.
掺Yb相移光纤光栅形成过程的分析   总被引:3,自引:3,他引:0  
研究了用二次曝光法制作掺Yb相移光纤光栅的实验过程 ,并对相移光纤光栅制作过程中出现次峰的情况进行了理论分析。合理地解释了该现象  相似文献   
4.
CdSe量子点的制备与荧光特性研究   总被引:2,自引:0,他引:2  
主要讨论了CdSe量子点的制备及荧光特性。CdSe量子点由化学方法制备,通过选择不同的反应时间得到不同尺度的量子点样品。用荧光方法研究了量子点样品在石英衬底和有机溶剂中的荧光特性。实验表明,这些量子点都有良好的荧光特性。还用无限深球方势阱模型分析了量子点样品的电子态,并根据荧光参数估算了量子点的尺度.各样品荧光峰具有一致的半峰宽,表明CdSe量子点的成核过程在反应开始时同时完成。  相似文献   
5.
脉冲激光冲击LY2铝合金,在试样表面形成约1.7mm的薄膜,研究了薄膜与基体接合处横截面的微观形貌以及激光冲击搭接率和激光冲击次数对薄膜层残余应力的影响。研究结果表明:激光冲击的光斑搭接率对试样横截面的残余应力影响显著;在薄膜层最大残余应力存在于试样的表层或者近表层,深度方向的残余应力值和残余压应力值变化率均与表层深度成反比;多次冲击能够获得较大的残余应力值,但对于激光冲击LY2铝合金薄膜深度影响较小。  相似文献   
6.
Diamond,as an ultra-wide bandgap semiconductor,has become a promising candidate for next-generation microelec-tronics and optoelectronics due to its numerous advantages over conventional semiconductors,including ultrahigh carrier mo-bility and thermal conductivity,low thermal expansion coefficient,and ultra-high breakdown voltage,etc.Despite these ex-traordinary properties,diamond also faces various challenges before being practically used in the semiconductor industry.This review begins with a brief summary of previous efforts to model and construct diamond-based high-voltage switching diodes,high-power/high-frequency field-effect transistors,MEMS/NEMS,and devices operating at high temperatures.Following that,we will discuss recent developments to address scalable diamond device applications,emphasizing the synthesis of large-area,high-quality CVD diamond films and difficulties in diamond doping.Lastly,we show potential solutions to modulate diamond’s electronic properties by the“elastic strain engineering”strategy,which sheds light on the future development of diamond-based electronics,photonics and quantum systems.  相似文献   
7.
The anisotropic two-dimensional (2D) layered material rhenium disulfide (ReSe2) has attracted considerable attention because of its unusual properties and promising applications in electronic and optoelectronic devices.However,because of its low lattice symmetry and interlayer decoupling,anisotropic growth and out-of-plane growth occur easily,yielding thick flakes,dendritic structure,or flower-like structure.In this study,we demonstrated a bottom-up method for the controlled and scalable synthesis of ReSe2 by van der Waals epitaxy.To achieve controllable growth,a micro-reactor with a confined reaction space was constructed by stacking two mica substrates in the chemical vapor deposition system.Within the confined reaction space,the nucleation density and growth rate of ReSe2 were significantly reduced,favoring the large-area synthesis of ReSe2 with a uniform monolayer thickness.The morphological evolution of ReSe2 with growth temperature indicated that the anisotropic growth was suppressed at a low growth temperature (<600 ℃).Field-effect transistors employing the grown ReSe2 exhibited p-type conduction with a current ON/OFF ratio up to 10s and a hole carrier mobility of 0.98 cm2/(V.s).Furthermore,the ReSe2 device exhibited an outstanding photoresponse to near-infrared light,with responsivity up to 8.4 and 5.1 A/W for 850-and 940-nm light,respectively.This work not only promotes the large-scale application of ReSe2 in high-performance electronic devices but also clarifies the growth mechanism of low-lattice symmetry 2D materials.  相似文献   
8.
谐振式光纤陀螺全数字闭环方案   总被引:2,自引:1,他引:2  
谐振式光纤陀螺是一种新型的惯性传感仪器,与传统机械陀螺和其他光学陀螺相比具有很多理论上的优势.数字信号处理电路的谐振式光纤陀螺全数字闭环是采用双频率数字锯齿波相位调制技术对光路进行了相应的调制和解调.对光信号中夹杂的大量白噪声以及数字信号处理中由于有限位数的A/D引入的量化噪声进行综合考虑,提出了用比信号带宽高很多的采样率对含有噪声的信号进行过采样,加上后续的数字信号处理,低位数A/D和高位数A/D的检测效果几乎一样.数字调制的精度影响了系统的精度,使用平均法用低位的D/A可以实现很大的调制动态范围.经过基于文中设计的数字系统的实验,得到了和理论仿真类似的解调曲线,证明了文中提出的数字闭环方案的可行性.  相似文献   
9.
双光栅外腔可调谐掺Yb3+双包层光纤激光器   总被引:3,自引:4,他引:3  
采用一种新颖的双光栅装置作为外腔调谐结构 ,实现了掺Yb3+ 双包层光纤激光器的调谐输出 ,调谐范围10 37~ 110 6nm。双光栅结构的应用 ,使调谐输出的激光光谱的线宽大大变窄 ,小于 0 1nm。检偏器测量结果表明 ,整个调谐范围内的激光输出均为线偏振光。  相似文献   
10.
Abstract

Two optic fiber sensing systems for temperature and voltage have been developed which utilize the mode‐mode interference of the two orthogonally polarized modes, HEx II and HEy II, in two commencal polarization‐maintaining fibers (bow‐tie and elliptical core fibers). A package of controlled programs in a Macintosh computer, which can record and process all related data automatically, is established for temperature sensing. The signal drifting problem in voltage sensings has been investigated, and the elimination of signal drifting is obtained by the phase tracking with direct current technology The agreement between the sensing results for temperature and dynamic voltage and those predicted by experimental principles is satisfactory, which confirms the validity of the developed sensing systems.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号