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We investigate a quadratically coupled optomechanical cavity system filled with a two-level atomic medium. The output of the cavity field exhibits analogous electromagnetically induced transparency when the optomechanical system interacts with the coupling and probe fields, respectively. We show that the introduction of the atomic medium can enhance the fluctuation of the displacement of the membrane as well as its energy. With the increasing of the atomic number, the dip of the absorption becomes deep. 相似文献
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The single-photon strong coupling in the deep-resolved sideband of the optomechanical system induces photon blockade (PB) effect. For the PB cavity, an initial mechanical coherent state evolves into superposition of phonon cat states entangled with the cavity Fock states. Measurement of the cavity photon number states produces phonon even and odd cat states. The information leakage effect of two photon states on the fidelity of cat states is calculated, it is shown that for low average phonon number this effect is negligible and decreases by increasing the two photon cavity state. The Lindblad equation is solved numerically to obtain the environmental effects on the fidelity of cat states. 相似文献
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大口径八边形钕玻璃片支撑系统的光机集成分析 总被引:1,自引:0,他引:1
控制由机械装夹方式所引入的波前畸变以提高惯性约束聚变(ICF)输出光束的质量,是在大口径钕玻璃片主放大器结构设计中必须考虑的。提出了一种新的有限元变形结果与光学元件面形畸变之间的数据处理方式,并与传统方式进行了对比。基于新的数据处理接口,利用光机集成分析方法对大口径八边形钕玻璃片的支撑系统结构设计参数进行优化。优化的结果保证了由支撑系统引起的透过波前畸变小于十分之一波长,同时波前畸变与设计参数变动的相关性最小。 相似文献
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为了提高耦合腔光力学系统的稳态纠缠,将光学参量放大器放置到光学腔中并研究了其纠缠状.首先利用量子朗之万方程和线性化处理,求出系统的稳态解; 然后将纠缠负对数作为纠缠判据,对系统的量子纠缠进行数值模拟.研究结果表明,含有光学参量放大器的系统不但可以显著增强稳态力学纠缠,而且可使纠缠不受热库环境温度的影响; 因此,本文方案可为操控力学系统间的量子纠缠提供参考. 相似文献
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Chen Chen Xiu Li Teng Lu Yun Liu Zhiguo Yi 《Journal of the American Ceramic Society》2020,103(8):4074-4082
Photostriction of lanthanum-modified lead zirconate titanate (PLZT) was commonly attributed to the combination of anomalous photovoltaic effect and inverse piezoelectric response. Herein, distinct photostrictions are detected in both poled and unpoled PLZT ceramics under 405 and 520 nm laser illuminations. The maximum photostriction around 0.09% is obtained in unpoled PLZT under 405 nm illumination, which is nine times of previously reported value that deduced from poled PLZT. The photoelectric and photovoltaic characterizations of poled/unpoled PLZT further evidence that the detected photostriction shows no direct association with the photovoltage-induced inverse piezoresponse. The light-induced microstructure changes observed by in situ piezoelectric force microscopy are revealed by domain evolutions along the boundaries. The possible photostriction mechanism of PLZT is attributed to the strong photo-induced electron-lattice coupling, which is suggested by the light-induced changes of the Zr/Ti-O-Zr/Ti bonds reflected by the power-dependent Raman spectra. This study extends the photostriction of PLZT to visible light range and will also stimulate reappraisal of the underlying mechanism of photostrictive effect involving ferroelectrics. 相似文献
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Using the Gaussian Rényi-2 entropy, we analyse the behaviour of two different aspects of quantum correlations (entanglement and quantum discord) in two optomechanical subsystems (optical and mechanical). We work in the resolved sideband and weak coupling regimes. In experimentally accessible parameters, we show that it is possible to create entanglement and quantum discord in the considered subsystems by quantum fluctuations transfer from either light to light or light to matter. We find that both mechanical and optical entanglement are strongly sensitive to thermal noises. In particular, we find that the mechanical one is more affected by thermal effects than that optical. Finally, we reveal that under thermal noises, the discord associated with the entangled state decays aggressively, whereas the discord of the separable state (quantumness of correlations) exhibits a freezing behaviour, seeming to be captured over a wide range of temperature. 相似文献
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Maithilee Motlag Prashant Kumar Kevin Y. Hu Shengyu Jin Ji Li Jiayi Shao Xuan Yi Yen‐Hsiang Lin Jenna C. Walrath Lei Tong Xinyu Huang Rachel S. Goldman Lei Ye Gary J. Cheng 《Advanced materials (Deerfield Beach, Fla.)》2019,31(19)
Graphene has a great potential to replace silicon in prospective semiconductor industries due to its outstanding electronic and transport properties; nonetheless, its lack of energy bandgap is a substantial limitation for practical applications. To date, straining graphene to break its lattice symmetry is perhaps the most efficient approach toward realizing bandgap tunability in graphene. However, due to the weak lattice deformation induced by uniaxial or in‐plane shear strain, most strained graphene studies have yielded bandgaps <1 eV. In this work, a modulated inhomogeneous local asymmetric elastic–plastic straining is reported that utilizes GPa‐level laser shocking at a high strain rate (dε/dt) ≈ 106–107 s?1, with excellent formability, inducing tunable bandgaps in graphene of up to 2.1 eV, as determined by scanning tunneling spectroscopy. High‐resolution imaging and Raman spectroscopy reveal strain‐induced modifications to the atomic and electronic structure in graphene and first‐principles simulations predict the measured bandgap openings. Laser shock modulation of semimetallic graphene to a semiconducting material with controllable bandgap has the potential to benefit the electronic and optoelectronic industries. 相似文献