Blocked crystallization in capped ultrathin polymer films studied by molecular simulations

The crystallization of capped ultrathin polymer films is closely dependent on film thickness and interfacial interaction. Using dynamic Monte Carlo simulations, the crystallization behaviors of polymer films confined between two substrates were investigated. The crystallization rate of confined polymers is reduced with high interfacial interactions. Above a critical strength of interfacial interaction, polymer crystallization in the thin film is inhibited within the simulation time scales. An increase in film thickness leads to a rise in critical interfacial interaction. In thicker films, the chains have more space to change conformation to form crystal stems. In addition, there are fewer absorbed segments in confined chains for the thicker films, and thus the chains have stronger ability to adjust their conformation. Therefore an increase in film thickness can cause a reduction in the entropic barrier required for the formation of crystals and thus an increase in the critical interfacial interaction. © 2018 Society of Chemical Industry     

The Electron–Phonon Interaction of Low-Dimensional and Multi-Dimensional Materials from He Atom Scattering

Atom scattering is becoming recognized as a sensitive probe of the electron–phonon interaction parameter λ at metal and metal-overlayer surfaces. Here, the theory is developed, linking λ to the thermal attenuation of atom scattering spectra (in particular, the Debye–Waller factor), to conducting materials of different dimensions, from quasi-1D systems such as W(110):H(1 × 1) and Bi(114), to quasi-2D layered chalcogenides, and high-dimensional surfaces such as quasicrystalline 2ML-Ba(0001)/Cu(001) and d-AlNiCo(00001). Values of λ obtained using He atoms compare favorably with known values for the bulk materials. The corresponding analysis indicates in addition, the number of layers contributing to the electron–phonon interaction, which is measured in an atom surface collision.     

Broad-Spectral-Range Sustainability and Controllable Excitation of Hyperbolic Phonon Polaritons in α-MoO3

Hyperbolic phonon polaritons (HPhPs) in orthorhombic-phase molybdenum trioxide (α-MoO₃) show in-plane hyperbolicity, great wavelength compression, and ultralong lifetime, therefore holding great potential in nanophotonic applications. However, its polaritonic response in the far-infrared (FIR) range remains unexplored due to challenges in experimental characterization. Here, monochromated electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM) is used to probe HPhPs in α-MoO₃ in both mid-infrared (MIR) and FIR frequencies and correlate their behaviors with microstructures and orientations. It is found that low structural symmetry leads to various phonon modes and multiple Reststrahlen bands (RBs) over a broad spectral range (over 70 meV) and in different directions (55–63 meV and 119–125 meV along the b-axis, 68–106 meV along the c-axis, and 101–121 meV along the a-axis). These HPhPs can be selectively excited by controlling the direction of swift electrons. These findings provide new opportunities in nanophotonic and optoelectronic applications, such as directed light propagation, hyperlenses, and heat transfer.     

Formation of ST12 phase Ge nanoparticles in ZnO thin films

In this work, we focus on the Ge nanoparticles (Ge-np) embedded ZnO multilayered thin films. Effects of reactive and nonreactive growth of ZnO layers on the rapid thermal annealing (RTA) induced formation of Ge-np have been specifically investigated. The samples were deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively on Si substrates. As-prepared thin film samples have been exposed to an ex-situ RTA at 600 °C for 60 s under forming gas atmosphere. Structural characterizations have been performed by X-ray Diffraction (XRD), Raman scattering, Secondary Ion Mass Spectroscopy (SIMS), and Scanning Electron Microscopy (SEM) techniques. It has been realized that reactive or nonreactive growth of ZnO layers significantly influences the morphology of the ZnO: Ge samples, most prominently the crystal structure of Ge-np. XRD and Raman analysis have revealed that while reactive growth results in a mixture of diamond cubic (DC) and simple tetragonal (ST12) Ge-np, nonreactive growth leads to the formation of only DC Ge-np upon RTA process. Formation of ST12 Ge-np has been discussed based on structural differences due to reactive and nonreactive growth of ZnO embedding layer.     

半导体量子点最低导带态的量子限制效应

采用最新计算方法和半导体体材料传统量子计算结果,系统研究了14种半导体(Si,Ge,Sn,AlSb,GaP,GaAs,GaSb,InP,InAs,InSb,ZnS,ZnSe,ZnTe,CdTe)的立方量子点,得到了最低导带态的量子限制效应结果,我们把量子点对尺寸的依赖关系分为三类并详细讨论了它们的差别。     

镨掺杂分布对1.3μm光纤放大器特性影响

对掺氟化镨玻璃光纤放大器的小信号增益，用广义的高斯近似公式可获得精确的分析表达。文中研究了限制光纤芯层中央部分的镨掺杂对光纤放大器特性的影响，结果发现限制镨掺杂分布能改进光纤放大器的工作效率，且截止波长比芯层全部均匀掺镨的光纤更长。     

Energy relaxation in GaInAs/AlInAs heterojunctions and GaAs/AlGaAs multiple quantum wells

We have studied electron energy relaxation in GaInAs/AlInAs heterojunctions and GaAs/AlGaAs multiple quantum wells using mobility measurements as a function of electric field and temperature, in the range 3K to 300K. The results in the range 3 to 20K show a power loss rate which is dependent on (T_e − T_l), suggesting that the energy relaxation occurs through acoustic phonon scattering. At electron temperatures greater than 20K, the experimental results are modelled using a standard expression for polar optical phonons. This modelling yields 30meV and 31meV for the polar optical phonon energy in GaAs and InGaAs respectively.     

Varying Electron Cyclotron Resonance Heating on the Levitated Dipole Experiment

Plasmas in the Levitated Dipole Experiment (LDX) are formed and sustained currently via two electron cyclotron resonance heating (ECRH) sources: 2.5 kW at 2.45 GHz and 2.5 kW at 6.4 GHz. An important topic being investigated is how varying the ECRH affects the confinement and stability of the plasma. We report the results of using different operational combinations of our RF sources, such as varying the power composition, changing the power levels, and sequencing of the onset time.     

InGaAs（P）分别限制应变单量子阱激光器的优化设计

针对较常用的ＩｎＧａＡｓ（Ｐ）分别限制应变单量子阱激光器，给出了为得到最大净增益的优化设计参数。对于激射波长为１．５５μｍ的无应变激光器，最佳的光限制层波长为１．２４μｍ，厚度为１００ｎｍ。当阱材料引入压缩应变后．由于价带的有效状态密度减小，量子阱激光器的微分增益变大，阱深的增大对增大线性增益的效果更加明显．所以最佳光限制层的波长将变短，为１．２０μｍ     

Heat transfer in YBaCuO thin film/sapphire substrate system

The thermal boundary resistance at the YBaCuO thin film/Al₂O₃ substrate interface was investigated. The transparency for thermal phonons incident on the interface as well as for phonons moving from the substrate was determined. We have measured a transient voltage response of current-biased films to continuously modulated radiation. The observed knee in the modulation frequency dependence of the response reflects the crossover from the diffusion regime to the contact resistance regime of the heat transfer across the interface. The values of transparency were independently deduced both from the phonon escape time and from the time of phonon return to the film which were identified with peculiarities in the frequency dependence. The results are much more consistent with the acoustic mismatch theory than the diffuse mismatch model.We are grateful to A. Elantev for helpful discussion. We acknowledge the financial support of the Russian Scientific Council on the HTS problem (Project No. 90462).