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1.
This work summarizes the progress in the study of the superconductor response to optical radiation and in the development of infrared detectors. The recent advances in the design of high-T c superconducting radiation detectors using silicon microfabrication technology are emphasized. Thermal and optical properties important for the detector performance are discussed. The mechanism of the nonequilibrium optical response and its potential use to build fast and sensitive radiation detectors are described. Future challenges and opportunities in the development of high-T c superconducting radiation detectors are highlighted.  相似文献   
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Spatially resolved extrinsic photoresponse experiments in pentacene two terminal devices without or under additional intrinsic bias-light excitation are employed. These experiments are used to investigate the microscopic mechanism of the recently observed phenomenon of the photoresponse enhancement under additional bias-light intrinsic excitation and to preclude that this phenomenon arises from contact-related artifacts. It is found that the extrinsic photogeneration near the contacts via electric field-assisted exciton splitting and/or light-induced depletion width-reduction have a negligible contribution to the extrinsic photoresponse. Under additional bias-light intrinsic excitation, a uniform increase of the photogenerated hole density is found to take place across the whole conduction channel, without changes in the electric field distribution and in the interfacial properties of the contacts. The photoresponse enhancement by the blue bias-light becomes stronger upon increasing the red-light intensity. A nearly square root dependence of the photoresponse enhancement on the blue bias-light intensity is found. It is shown that the observed dependence of the photoresponse enhancement on the light intensities of the extrinsic and intrinsic excitation can be explained with the extrinsic photogeneration mechanism based on hole detrapping by triplet exciton dissociation.  相似文献   
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We analyze the effect of doping on photoelectron kinetics in quantum dot [QD] structures and find two strong effects of the built-in-dot charge. First, the built-in-dot charge enhances the infrared [IR] transitions in QD structures. This effect significantly increases electron coupling to IR radiation and improves harvesting of the IR power in QD solar cells. Second, the built-in charge creates potential barriers around dots, and these barriers strongly suppress capture processes for photocarriers of the same sign as the built-in-dot charge. The second effect exponentially increases the photoelectron lifetime in unipolar devices, such as IR photodetectors. In bipolar devices, such as solar cells, the solar radiation creates the built-in-dot charge that equates the electron and hole capture rates. By providing additional charge to QDs, the appropriate doping can significantly suppress the capture and recombination processes via QDs. These improvements of IR absorption and photocarrier kinetics radically increase the responsivity of IR photodetectors and photovoltaic efficiency of QD solar cells.  相似文献   
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ZnO单晶薄膜光电响应特性   总被引:4,自引:0,他引:4  
对采用MOCVD方法沉积的ZnO单晶薄膜的欧姆接触特性、光电特性进行了研究,并对比研究了射频溅射沉积SiO2抗反射膜对ZnO薄膜I-V、光电特性的影响.实验结果表明,非合金Al/ZnO金属体系与n型ZnO形成了良好的欧姆接触,溅射沉积SiO2在ZnO表面引入了载流子陷阱,影响I-V特性,延长了光响应下降时间.ZnO单晶薄膜光电导也具有时间退化现象.  相似文献   
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Advances in the photocurrent conversion of two-dimensional (2D) transition metal dichalcogenides have enabled the realization and application of ultrasensitive and broad-spectral photodetectors. The requirements of previous devices constantly drive for complex technological implementation, resulting in limits in scale and complexity. Furthermore, the development of large-area and low-cost photodetectors would be beneficial for applications. Therefore, we demonstrate a novel design of a heterojunction photodetector based on solution-processed ultrathin MoSe2 nanosheets to satisfy the requirements of its application. The photodetector exhibits a high sensitivity to visible–near infrared light, with a linear dynamic range over 124 decibels (dB), a detectivity of ~1.2 × 1012 Jones, and noise current approaching 0.1 pA·Hz–1/2 at zero bias. Significantly, the device shows an ultra-high response speed up to 30 ns with a 3-dB predicted bandwidth over 32 MHz, which is far better than that of most of the 2D nanostructured and solution-processable photodetectors reported thus far and is comparable to that of commercial Si photodetectors. Combining our results with material-preparation methods, together with the methodology of device fabrication presented herein, can provide a pathway for the large-area integration of low-cost, high-speed photodetectors.
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Photoresponsive macromolecules are of interest both as novel organic materials for applications in photodevices and as models for photomodulated biological processes. The presence in polymer chains of photosensitive groups and of chiral groups capable of inducing optical activity into the polymer is very useful for the analysis of photomodulated structural variations and allows storage of the light effect in the form of chiral information. Polypeptides bearing photochromic groups in the side chains are very convenient as the chiroptical properties of the peptide chromophore can be correlated to the backbone conformation. Thus polymers of L-aspartic acid, L-glutamic acid and L-lysine with azobenzene or stilbene groups attached covalently to the side chains are discussed in terms of photoinduced conformational changes and chiroptical information storage in the spectral region of the peptide and of the photoresponsive chromophore. Optically active photochromic macromolecules with hydrocarbon backbone, such as copolymers of (—)-menthyl acrylate with vinyl or acryloyl derivatives of azobenzene, stilbene and indolinospirobenzopyran, also show in some cases photodependence of chiroptical properties with evidence of at least local conformational changes as a consequence of light irradiation which can be used for chiral information.  相似文献   
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The ability to arbitrarily regulate semiconductor interfaces provides the most effective way to modulate the performance of optoelectronic devices. However, less work has been reported on piezo-modulated interface engineering in all-oxide systems. In this paper, an enhanced photoresponse of an all-oxide Cu2O/ZnO heterojunction was obtained by taking advantage of the piezotronic effect. The illumination density-dependent piezoelectric modulation ability was also comprehensively investigated. An 18.6% enhancement of photoresponse was achieved when applying a a-0.88% compressive strain. Comparative experiments confirmed that this enhancement could be interpreted in terms of the band modification induced by interfacial piezoelectric polarization. The positive piezopotential generated at the ZnO side produces an increase in space charge region in Cu2O, thus providing an extra driving force to separate the excitons more efficiently under illumination. Our research provides a promising method to boost the performance of optoelectronics without altering the interface structure and could be extended to other metal oxide devices.  相似文献   
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