PdSe2半导体薄膜的真空硒化法制备研究

PdSe2薄膜主要通过机械剥离法和气相沉积法制得,本研究采用一种简单有效的可在SiO2/Si衬底上制备PdSe2薄膜的方法.通过高真空磁控溅射技术在SiO2/Si衬底上沉积一层Pd金属薄膜,将Pd金属薄膜与Se粉封在高真空的石英管中并在一定的温度下进行硒化,获得PdSe2薄膜.根据截面高分辨透射电镜(HRTEM)照片可...     

Gallium gradients in Cu(In,Ga)Se2 thin‐film solar cells

The gallium gradient in Cu(In,Ga)Se₂ (CIGS) layers, which forms during the two industrially relevant deposition routes, the sequential and co‐evaporation processes, plays a key role in the device performance of CIGS thin‐film modules. In this contribution, we present a comprehensive study on the formation, nature, and consequences of gallium gradients in CIGS solar cells. The formation of gallium gradients is analyzed in real time during a rapid selenization process by in situ X‐ray measurements. In addition, the gallium grading of a CIGS layer grown with an in‐line co‐evaporation process is analyzed by means of depth profiling with mass spectrometry. This gallium gradient of a real solar cell served as input data for device simulations. Depth‐dependent occurrence of lateral inhomogeneities on the µm scale in CIGS deposited by the co‐evaporation process was investigated by highly spatially resolved luminescence measurements on etched CIGS samples, which revealed a dependence of the optical bandgap, the quasi‐Fermi level splitting, transition levels, and the vertical gallium gradient. Transmission electron microscopy analyses of CIGS cross‐sections point to a difference in gallium content in the near surface region of neighboring grains. Migration barriers for a copper‐vacancy‐mediated indium and gallium diffusion in CuInSe₂ and CuGaSe₂ were calculated using density functional theory. The migration barrier for the In_Cu antisite in CuGaSe₂ is significantly lower compared with the Ga_Cu antisite in CuInSe₂, which is in accordance with the experimentally observed Ga gradients in CIGS layers grown by co‐evaporation and selenization processes. Copyright © 2014 John Wiley & Sons, Ltd.     

硒化二氢杨梅素的制备及抗肿瘤活性

以DMY为基底物、Na2SeO3为硒化剂制备硒化DMY。采用UV、FTIR、NMR、XRD、TG、原子荧光光度计表征其结构和性能，CCK-8法检测对HSC-3细胞增殖的影响，划痕实验研究对HSC-3细胞迁移的影响。结果表明，硒化DMY中仍存在黄酮基本母核、并新形成C-Se键，其中硒含量为6.54%±0.22%；DMY和硒化DMY均对HSC-3细胞的增殖和迁移有良好的抑制作用、抑制效果与浓度呈正相关，且DMY和硒化DMY对HSC-3细胞的半数抑制浓度（IC50）分别为25.27 μg/mL、21.27 μg/mL，DMY的硒化有效提高了对HSC-3细胞增殖和迁移的抑制能力。     

Fabrication of Cu(In,Ga)Se2 thin films by sputtering from a single quaternary chalcogenide target

Single‐layered Cu‐In‐Ga‐Se precursors were fabricated by one‐step sputtering of a single quaternary Cu(In,Ga)Se₂ (CIGS) chalcogenide target at room temperature, followed by post selenization using Se vapor obtained from elemental Se pellets. The morphological and structural properties of both as‐deposited and selenized films were characterized by X‐ray diffraction (XRD), Raman spectroscope and scanning electron microscope (SEM). The precursor films exhibited a chalcopyrite structure with a preferential orientation in the (112) direction. The post‐selenization process at high‐temperature significantly improved the quality of the chalcopyrite CIGS. The CIGS layers after post‐selenization were used to fabricate solar cells. The solar cell had an open‐circuit voltage Voc of 0.422 V, a short‐circuit current density J = 24.75 mA, a fill factor of 53.29%, and an efficiency of 7.95%. Copyright © 2010 John Wiley & Sons, Ltd.     

硒化温度对SnSe2薄膜材料性能的影响

采用射频磁控溅射加硒化的两步法在超白玻璃衬底上生长SnSe₂薄膜,采用XRD、光学透过谱、Raman光谱、XPS和SEM等方法对薄膜进行性能表征。通过设置不同的硒化温度,研究不同硒化温度对所得薄膜相结构、物相与组分、表面形貌等性能的影响。结果表明:350℃,40min硒化所得薄膜为片状晶粒,光学带隙为1.46eV,相结构和均匀性等性能在该硒化条件下均为最佳。     

Electrodeposited Cu2ZnSnSe4 thin film solar cell with 7% power conversion efficiency

High performance Cu₂ZnSnSe₄ (CZTSe) photovoltaic materials were synthesized by electrodeposition of metal stack precursors followed by selenization. A champion solar cell with 7.0% efficiency is demonstrated. This is the highest efficiency among all of the CZTSe solar cells prepared from electrodeposited metallic precursors reported to‐date. Device parameters are discussed from the perspective of material microstructure and composition in order to improve performance. In addition, a high performance electrodeposited CZTS (S only) solar cell was demonstrated and its device characteristics were compared against the CZTSe (Se only) cell. Using secondary ion mass spectrometry for the analysis of the chemical composition of the absorber layer, a higher concentration of oxygen in the electrodeposited absorber is thought to be the root cause of the lower performance of the electrodeposited CZTS or CZTSe solar cells with respect to a solar cell fabricated by evaporation. The grain boundary areas of Sn‐rich composition are thought to be responsible for the lower shunt resistance commonly observed in CZTSe devices. We measured the longest minority carrier lifetime of 18 ns among all reported kesterite devices. This work builds a good baseline for obtaining higher efficiency earth‐abundant solar cells, while it highlights electrodepositon as a low cost and feasible method for earth‐abundant thin film solar cell fabrication. Copyright © 2013 John Wiley & Sons, Ltd.     

CuIn1−xGaxSe2‐based thin‐film solar cells by the selenization of sequentially evaporated metallic layers

Polycrystalline CuIn_1−xGa_xSe₂ (CIGS) thin films were deposited by the non‐vacuum, near‐atmospheric‐pressure selenization of stacked metallic precursor layers. A study was carried out to investigate the influence of significant factors of the absorber on the solar cells performance. An efficiency enhancement was obtained for Cu/(In+Ga) atomic ratios between 0·93 and 0·95. The slope of the observed energy bandgap grading showed a strong influence on the V_OC and the short circuit current density J_SC. An increase of the Ga content in the active region of the absorber was achieved by the introduction of a thin Ga layer on the Mo back contact. This led to an improvement of efficiency and V_OC. Furthermore, an enhanced carrier collection was detected by quantum efficiency measurements when the absorber layer thickness was slightly decreased. Conversion efficiencies close to 10% have been obtained for these devices. Copyright © 2005 John Wiley & Sons, Ltd.     

冬凌草硒多糖的制备、表征及抗氧化活性分析

本研究以济源冬凌草多糖为原料，选用化学合成方法对多糖进行结构修饰。采用UV、FT-IR、SEM、TGA、HPLC等方法对冬凌草多糖以及硒多糖结构特征进行了表征；通过DPPH（1,1-二苯基-2-三硝基苯肼）自由基法、羟自由基法等4种方法对其抗氧化活性进行了探究。结果：制备的硒多糖中硒质量分数为1.35 mg/g。硒化修饰后，冬凌草多糖的基本骨架得到保留，单糖种类未发生改变，但其分解温度降低、稳定性下降，多糖形貌也发生明显变化，球状与条状形貌增多，片状形貌减少。此外，在体外抗氧化性实验中，当硒多糖质量浓度为1.6mg/mL时，对DPPH自由基、ABTS自由基、羟自由基清除率分别为68.68%、86.69%、45.12%，均强于冬凌草多糖。     

金属预置层后硒化法制备CIGS薄膜的研究进展

系统综述了国内外采用金属预置层后硒化法制备Cu(In,Ga)Se2(CIGS)薄膜的研究进展,重点从预置层制备过程中靶材的选择、叠层方式以及后硒化过程中硒源种类和硒化方式的选择等几个方面对各种工艺的优点、存在的问题和可能的解决方案进行讨论,并对金属预置层后硒化法的发展前景和趋势进行了展望。     

铜铟镓铝硒(Cu(InGaAl)Se2)薄膜制备及其光学性能研究

本文采用溶剂热法制备出掺铝的铜铟镓硒Cu(InGaAl)Se₂(简称CIGAS)纳米粉末,并直接将此纳米粉末作为蒸镀材料制备铜铟镓铝硒CIGAS薄膜,再将其放置在装有高纯硒粉的自制密封法兰内在真空下进行硒化和退火处理,从而得到符合化学计量比的铜铟镓铝硒CIGAS薄膜。采用X射线衍射(XRD)和拉曼光谱(Raman)以及扫描电镜(STM)观测和能谱(ED)对样品结构和成分进行测量,确认CIGAS薄膜样品是黄铜矿结构和铜铟镓硒成分。采用椭圆偏振光谱测量术对铜铟镓铝硒CIGAS薄膜进行椭偏光谱测量,进而得出薄膜光学参数如折射率n(λ)、消光系数k(λ)、吸收系数以及薄膜光能隙Eg, 并发现Al元素的掺杂明显增加了薄膜光能隙,并进行了相关物理分析。