全文获取类型
收费全文 | 12819篇 |
免费 | 1611篇 |
国内免费 | 1064篇 |
专业分类
电工技术 | 393篇 |
综合类 | 548篇 |
化学工业 | 3854篇 |
金属工艺 | 1043篇 |
机械仪表 | 530篇 |
建筑科学 | 113篇 |
矿业工程 | 185篇 |
能源动力 | 683篇 |
轻工业 | 211篇 |
水利工程 | 19篇 |
石油天然气 | 160篇 |
武器工业 | 66篇 |
无线电 | 2810篇 |
一般工业技术 | 2959篇 |
冶金工业 | 1373篇 |
原子能技术 | 167篇 |
自动化技术 | 380篇 |
出版年
2024年 | 50篇 |
2023年 | 243篇 |
2022年 | 294篇 |
2021年 | 446篇 |
2020年 | 433篇 |
2019年 | 393篇 |
2018年 | 352篇 |
2017年 | 466篇 |
2016年 | 527篇 |
2015年 | 563篇 |
2014年 | 726篇 |
2013年 | 715篇 |
2012年 | 863篇 |
2011年 | 967篇 |
2010年 | 622篇 |
2009年 | 756篇 |
2008年 | 622篇 |
2007年 | 770篇 |
2006年 | 714篇 |
2005年 | 617篇 |
2004年 | 532篇 |
2003年 | 594篇 |
2002年 | 488篇 |
2001年 | 434篇 |
2000年 | 441篇 |
1999年 | 250篇 |
1998年 | 233篇 |
1997年 | 198篇 |
1996年 | 183篇 |
1995年 | 150篇 |
1994年 | 113篇 |
1993年 | 98篇 |
1992年 | 116篇 |
1991年 | 120篇 |
1990年 | 141篇 |
1989年 | 117篇 |
1988年 | 28篇 |
1987年 | 17篇 |
1986年 | 11篇 |
1985年 | 7篇 |
1984年 | 12篇 |
1983年 | 7篇 |
1982年 | 11篇 |
1981年 | 8篇 |
1980年 | 7篇 |
1979年 | 14篇 |
1978年 | 6篇 |
1977年 | 5篇 |
1976年 | 5篇 |
1975年 | 5篇 |
排序方式: 共有10000条查询结果,搜索用时 31 毫秒
1.
Lili Hou Axel Olesund Shameel Thurakkal Xiaoyan Zhang Bo Albinsson 《Advanced functional materials》2021,31(47):2106198
Developing high-performance visible-to-UV photon upconversion systems based on triplet–triplet annihilation photon upconversion (TTA-UC) is highly desired, as it provides a potential approach for UV light-induced photosynthesis and photocatalysis. However, the quantum yield and spectral range of visible-to-UV TTA-UC based on nanocrystals (NCs) are still far from satisfactory. Here, three different sized CdS NCs are systematically investigated with triplet energy transfer to four mediators and four annihilators, thus substantially expanding the available materials for visible-to-UV TTA-UC. By improving the quality of CdS NCs, introducing the mediator via a direct mixing fashion, and matching the energy levels, a high TTA-UC quantum yield of 10.4% (out of a 50% maximum) is achieved in one case, which represents a record performance in TTA-UC based on NCs without doping. In another case, TTA-UC photons approaching 4 eV are observed, which is on par with the highest energies observed in optimized organic systems. Importantly, the in-depth investigation reveals that the direct mixing approach to introduce the mediator is a key factor that leads to close to unity efficiencies of triplet energy transfer, which ultimately governs the performance of NC-based TTA-UC systems. These findings provide guidelines for the design of high-performance TTA-UC systems toward solar energy harvesting. 相似文献
2.
《Ceramics International》2021,47(23):33353-33362
High thermal conductivity Si3N4 ceramics were fabricated using a one-step method consisting of reaction-bonded Si3N4 (RBSN) and post-sintering. The influence of Si content on nitridation rate, β/(α+β) phase rate, thermal conductivity and mechanical properties was investigated in this work. It is of special interest to note that the thermal conductivity showed a tendency to increase first and then decrease with increasing Si content. This experimental result shows that the optimal thermal conductivity and fracture toughness were obtained to be 66 W (m K)-1 and 12.0 MPa m1/2, respectively. As a comparison, the nitridation rate and β/(α+β) phase rate in a static pressure nitriding system, i.e., 97% (MS10), 97% (MS15), 97% (MS20) and 8.3% (MS10), 8.3% (MS15), 8.9% (MS20), respectively, have obvious advantages over those in a flowing nitriding system, i.e., 91% (MS10), 91% (MS15), 93% (MS20) and 3.1% (MS10), 3.3% (MS15), 3.3% (MS20), respectively. Moreover, high lattice integrity of the β-Si3N4 phase was observed, which can effectively confine O atoms into the β-Si3N4 lattice using MgO as a sintering additive. This result indicates that one-step sintering can provide a new route to prepare Si3N4 ceramics with a good combination of thermal conductivity and mechanical properties. 相似文献
3.
A new technique of EDM coring of single crystal silicon carbide (SiC) ingot was proposed in this paper. Currently single crystal SiC devices are still of high cost due to the high cost of bulk crystal SiC material and the difficulty in the fabrication process of SiC. In the manufacturing process of SiC ingot/wafer, localized cracks or defects occasionally occur due to thermal or mechanical causes resulted from fabrication processes which may waste the whole piece of material. To save the part of ingot without defects and maximize the material utilization, the authors proposed EDM coring method to cut out a no defect ingot from a larger diameter ingot which has localized defects. A special experimental setup was developed for EDM coring of SiC ingot in this study and its feasibility and machining performance were investigated. Meanwhile, in order to improve the machining rate, a novel multi-discharge EDM coring method by electrostatic induction feeding was established, which can realize multiple discharges in single pulse duration. Experimental results make it clear that EDM coring of SiC ingot can be carried out stably using the developed experimental setup. Taking advantage of the newly developed multi-discharge EDM method, both the machining speed and surface integrity can be improved. 相似文献
4.
In this study we analyze the optoelectronic properties and structural characterization of hydrogenated polymorphous silicon thin films as a function of the deposition parameters. The films were grown by plasma enhanced chemical vapor deposition (PECVD) using a gas mixture of argon (Ar), hydrogen (H2) and dichlorosilane (SiH2Cl2). High-resolution transmission electron microscopy images and Raman measurements confirmed the existence of very different internal structures (crystalline fractions from 12% to 54%) depending on the growth parameters. Variations of as much as one order of magnitude were observed in both the photoconductivity and effective absorption coefficient between the samples deposited with different dichlorosilane/hydrogen flow rate ratios. The optical and transport properties of these films depend strongly on their structural characteristics, in particular the average size and densities of silicon nanocrystals embedded in the amorphous silicon matrix. From these results we propose an intrinsic polymorphous silicon bandgap grading thin film to be applied in a p–i–n junction solar cell structure. The different parts of the solar cell structure were proposed based on the experimental optoelectronic properties of the pm-Si:H thin films studied in this work. 相似文献
5.
By mans of a chemical synthesis technique stoichiometric CdTe-nanocrystals thin films were prepared on glass substrates at 70 °C. First, Cd(OH)2 films were deposited on glass substrates, then these films were immersed in a growing solution prepared by dissolution of Te in hydroxymethane sulfinic acid to obtain CdTe. The structural analysis indicates that CdTe thin films have a zinc-blende structure. The average nanocrystal size was 19.4 nm and the thickness of the films 170 nm. The Raman characterization shows the presence of the longitudinal optical mode and their second order mode, which indicates a good crystalline quality. The optical transmittance was less than 5% in the visible region (400–700 nm). The compositional characterization indicates that CdTe films grew with Te excess. 相似文献
6.
Rectangular section control technology(RSCT)was introduced to achieve high-precision profile control during silicon steel rolling.The RSCT principle and method were designed,and the whole RSCT control strategy was developed.Specifically,RSCT included roll contour design,rolling technology optimization,and control strategy development,aiming at both hot strip mills(HSMs)and cold strip mills(CSMs).Firstly,through the high-performance variable crown(HVC)work roll optimization design in the upper-stream stands and the limited shifting technology for schedule-free rolling in the downstream stands of HSMs,a hot strip with a stable crown and limited wedge,local spot,and single wave was obtained,which was suitable for cold rolling.Secondly,an approximately rectangular section was obtained by edge varying contact(EVC)work roll contour design,edge-drop setting control,and closed loop control in the upper-stream stands of CSMs.Moreover,complex-mode flatness control was realized by coordinating multiple shape-control methods in the downstream stands of CSMs.In addition,the RSCT approach was applied in several silicon-steel production plants,where an outstanding performance and remarkable economic benefits were observed. 相似文献
7.
Alberto Ballesteros Ester Laguna-Gutierrez Paula Cimavilla-Roman Maria Luisa Puertas Antonio Esteban-Cubillo Julio Santaren Miguel Angel Rodriguez-Perez 《应用聚合物科学杂志》2021,138(46):51373
In the present work blends of polystyrene (PS) with sepiolites have been produced using a melt extrusion process. The dispersion degree of the sepiolites in the PS has been analyzed by dynamic shear rheology and X-ray micro-computed tomography. Sepiolites treated with quaternary ammonium salts (O-QASEP) are better dispersed in the PS matrix than natural sepiolites (N-SEP) or sepiolites organo-modified with silane groups (O-SGSEP). A percolated network is obtained when using 6.0 wt% of O-QASEP, 8.0 wt% of N-SEP and 10.0 wt% of O-SGSEP. It has been shown that multiple extrusion processes have a negative effect on the polymer architecture. They produce a reduction in the length of the polymeric chains, and they do not lead to a better dispersion of the particles in the polymer matrix. Foams have been produced using a gas dissolution foaming process, where a strong effect of the dispersion degree on the cellular structure of the different foams was found. The effects on the cellular structure obtained by using different types of sepiolites, different contents of sepiolites and different extrusion conditions have been analyzed. The foams produced with the formulations containing O-QASEP present the lowest cell size and the most homogeneous cellular structures. 相似文献
8.
9.
10.
Youngseok Lee Cheolmin Park Nagarajan Balaji Youn-Jung Lee Vinh Ai Dao 《Israel journal of chemistry》2015,55(10):1050-1063
Over the past few decades, crystalline silicon solar cells have been extensively studied due to their high efficiency, high reliability, and low cost. In addition, these types of cells lead the industry and account for more than half of the market. For the foreseeable future, Si will still be a critical material for photovoltaic devices in the solar cell industry. In this paper, we discuss key issues, cell concepts, and the status of recent high-efficiency crystalline silicon solar cells. 相似文献