Polaronic Trions at the MoS2/SrTiO3 Interface

The reduced electrical screening in 2D materials provides an ideal platform for realization of exotic quasiparticles, that are robust and whose functionalities can be exploited for future electronic, optoelectronic, and valleytronic applications. Recent examples include an interlayer exciton, where an electron from one layer binds with a hole from another, and a Holstein polaron, formed by an electron dressed by a sea of phonons. Here, a new quasiparticle is reported, “polaronic trion” in a heterostructure of MoS₂/SrTiO₃ (STO). This emerges as the Fröhlich bound state of the trion in the atomically thin monolayer of MoS₂ and the very unique low energy soft phonon mode (≤7 meV, which is temperature and field tunable) in the quantum paraelectric substrate STO, arising below its structural antiferrodistortive (AFD) phase transition temperature. This dressing of the trion with soft phonons manifests in an anomalous temperature dependence of photoluminescence emission leading to a huge enhancement of the trion binding energy (≈70 meV). The soft phonons in STO are sensitive to electric field, which enables field control of the interfacial trion–phonon coupling and resultant polaronic trion binding energy. Polaronic trions could provide a platform to realize quasiparticle‐based tunable optoelectronic applications driven by many body effects.     

Infrared Organic Light‐Emitting Diodes with Carbon Nanotube Emitters

While organic light‐emitting diodes (OLEDs) covering all colors of the visible spectrum are widespread, suitable organic emitter materials in the near‐infrared (nIR) beyond 800 nm are still lacking. Here, the first OLED based on single‐walled carbon nanotubes (SWCNTs) as the emitter is demonstrated. By using a multilayer stacked architecture with matching charge blocking and charge‐transport layers, narrow‐band electroluminescence at wavelengths between 1000 and 1200 nm is achieved, with spectral features characteristic of excitonic and trionic emission of the employed (6,5) SWCNTs. Here, the OLED performance is investigated in detail and it is found that local conduction hot‐spots lead to pronounced trion emission. Analysis of the emissive dipole orientation shows a strong horizontal alignment of the SWCNTs with an average inclination angle of 12.9° with respect to the plane, leading to an exceptionally high outcoupling efficiency of 49%. The SWCNT‐based OLEDs represent a highly attractive platform for emission across the entire nIR.     

Experimental Evidence of Anisotropic and Stable Charged Excitons (Trions) in Atomically Thin 2D ReS2

Experimentally observed, stable trions with large binding energy (≈25 meV) in atomically thin monolayer 2D transition metal dichalcogenides MX₂ (M = Mo, W, X = S, Se, and Te) with an isotropic crystal structure have been extensively studied. In contrast, the characteristics of trions in atomically thin 2D materials with an anisotropic crystal structure are not completely understood. Low‐temperature photoluminescence (PL) spectroscopy in few‐layer ReS₂ with an anisotropic crystal structure by applying a gate voltage is described. A new PL peak that emerges below the lower‐energy side of neutral excitons obtained by tuning the gate voltages is attributed to emission from negative trions. Furthermore, the trion binding energy that is strongly dependent on the layer thickness reaches a large value of ≈60 meV in 1L–ReS₂, which is ≈2 times larger than that in other isotropic 2D materials (MX₂). The enhancement of the binding energy reflects the quasi‐1D nature of the trions in anisotropic atomically thin ReS₂. These experimental observations will promote a better understanding of the optical response and applications in new categories of the anisotropic atomically thin 2D materials with a quasi‐1D nature.     

Strain Relaxation of Monolayer WS2 on Plastic Substrate

Strain‐dependent electrical and optical properties of atomically thin transition metal dichalcogenides may be useful in sensing applications. However, the question of how strain relaxes in atomically thin materials remains not well understood. Herein, the strain relaxation of triangular WS₂ deposited on polydimethylsiloxane substrate is investigated. The photoluminescence of trions (X^–) and excitons (X⁰) undergoes linear redshifts of ≈20 meV when the substrate tensile strain increases from 0 to 0.16. However, when the substrate strain further increases from 0.16 to 0.32, the redshifts cease due to strain relaxation in WS₂. The strain relaxation occurs through formation of wrinkles in the WS₂ crystal. The pattern of wrinkles is found to be dependent on the relative angle between an edge of the triangular WS₂ crystal and tensile strain direction. Finite element simulations of the strain distribution inside the WS₂ crystals explain the experimental observations.     

Many‐Body Complexes in 2D Semiconductors

2D semiconductors such as transition metal dichalcogenides (TMDs) and black phosphorus (BP) are currently attracting great attention due to their intrinsic bandgaps and strong excitonic emissions, making them potential candidates for novel optoelectronic applications. Optoelectronic devices fabricated from 2D semiconductors exhibit many‐body complexes (exciton, trion, biexciton, etc.) which determine the materials optical and electrical properties. Characterization and manipulation of these complexes have become a reality due to their enhanced binding energies as a direct result from reduced dielectric screening and enhanced Coulomb interactions in the 2D regime. Furthermore, the atomic thickness and extremely large surface‐to‐volume ratio of 2D semiconductors allow the possibility of modulating their inherent optical, electrical, and optoelectronic properties using a variety of different environmental stimuli. To fully realize the potential functionalities of these many‐body complexes in optoelectronics, a comprehensive understanding of their formation mechanism is essential. A topical and concise summary of the recent frontier research progress related to many‐body complexes in 2D semiconductors is provided here. Moreover, detailed discussions covering the aspects of fundamental theory, experimental investigations, modulation of properties, and optoelectronic applications are given. Lastly, personal insights into the current challenges and future outlook of many‐body complexes in 2D semiconducting materials are presented.