Ultra-fast microwave aided synthesis of gold nanocages and structural maneuver studies

Gold nanocages (AuNcgs) are well-studied,hollow,metallic nanostructures that have fascinated researchers in the fields of nanotechnology,materials science,photoelectronics,biotechnology,and medical science for the last decade.However,the time-consuming synthesis of AuNcgs has limited their widespread use in materials science and nano-biotechnology.A novel,ultra-fast,simple,and highly convenient method for the production of AuNcgs using microwave heating is demonstrated herein.This quick method of AuNcg synthesis requires mild laboratory conditions for large-scale production of AuNcgs.The microwave heating technique offers the advantage of precise mechanical control over the temperature and heating power,even for the shortest reaction period (i.e.,seconds).Microwave-synthesized AuNcgs were compared with conventionally synthesized AuNcgs.Structural maneuver studies employing the conventionally produced AuNcgs revealed the formation of screw dislocations and a shift in the lattice plane.Detailed characterization of the microwave-generated AuNcgs was performed using high resolution transmission electron microscopy (HRTEM),scanning electron microscopy (SEM),X-ray powder diffraction (XRD),and spectroscopic techniques.     

Fluid flow characteristics of single inclined circular jet impingement for ultra-fast cooling

The fluid flow characteristics of the single bunch inclined jet impingement were investigated with different jet flow velocities, nozzle diameters, jet angles and jet-to-target distances for ultra-fast cooling technology. The results show that the peak pressure varying significantly from nearly 0.5 to above 13.4 kPa locates at the stagnation point with different jet diameters, and the radius of impact pressure affected zone is small promoted from 46 to 81 mm in transverse direction, and 50 to 91 mm in longitude direction when the jet flow velocity changes from 5 to 20 m/s. However, the fluid flow velocity is relatively smaller near the stagnation point, and increases gradually along the radius outwards, then declines. There is an obvious anisotropic characteristic that the flow velocity component along the jet direction is about twice of the contrary one where the jet anlge is 60°, jet diameter is 5 mm, jet length is 8 mm and jet height is 50 mm.     

超快冷供水系统自动化控制研究及优化

超快冷是轧机后冷却钢板的重要生产工艺设备,其供水系统的合理、稳定对冷却工艺、钢板温度的准确性及均匀性有良好的作用,并且合理的供水系统自动化控制减少了人工操作,有节能作用。介绍了沙钢3 500 mm宽厚板生产线的超快冷供水系统,采用可编程序控制器PLC和交流电机变频调速技术在原有设备控制的基础上进行了优化改进,节能降耗、保持水压平稳及自动化控制方面效果明显。     

超高速光电探测器

现代激光科学研究、核爆模拟、惯性约束核聚变（ICF）研究等领域需要测量半宽度100ps左右的超高速激光脉冲。超高速光电探测器就是探测光信号并转换成相应电脉冲的有力工具。     

Graphene–Ruthenium Complex Hybrid Photodetectors with Ultrahigh Photoresponsivity

The maximum responsivity of a pure monolayer graphene‐based photodetector is currently less than 10 mA W^?1 because of small optical absorption and short recombination lifetime. Here, a graphene hybrid photodetector functionalized with a photoactive ruthenium complex that shows an ultrahigh responsivity of ≈1 × 10⁵ A W^?1 and a photoconductive gain of ≈3 × 10⁶ under incident optical intensity of the order of sub‐milliwatts is reported. This responsivity is two orders of magnitude higher than the precedent best performance of graphene‐based photodetectors under a similar incident light intensity. Upon functionalization with a 4‐nm‐thick ruthenium complex, monolayer graphene‐based photodetectors exhibit pronounced n‐type doping effect due to electron transfer via the metal?ligand charge transfer (MLCT) from the ruthenium complex to graphene. The ultrahigh responsivity is attributed to the long lifetime and high mobility of the photoexcited charge carriers. This approach is highly promising for improving the responsivity of graphene‐based photodetectors.     

Monitoring the Channel Formation in Organic Field‐Effect Transistors via Photoinduced Charge Transfer

Conducting channel formation in organic field‐effect transistors (OFETs) is considered to happen in the organic semiconductor layer very close to the interface with the gate dielectric. In the gradual channel approximation, the local density of accumulated charge carriers varies as a result of applied gate bias, with the majority of the charge carriers being localized in the first few semiconductor monolayers close to the dielectric interface. In this report, a new concept is employed which enables the accumulation of charge carriers in the channel by photoinduced charge transfer. An OFET employing C₆₀ as a semiconductor and divinyltetramethyldisiloxane‐bis(benzocyclobutene) as the gate dielectric is modified by a very thin noncontinuous layer of zinc‐phthalocyanine (ZnPc) at the semiconductor/dielectric interface. With this device geometry, it is possible to excite the phthalocyanine selectively and photogenerate charges directly at the semiconductor/dielectric interface via photoinduced electron transfer from ZnPc onto C₆₀. Thus the formation of a gate induced and a photoinduced channel in the same device can be correlated.     

超高速光电倍增管的研制及其时间特性测试研究

采用金属-陶瓷管壳和小孔径微通道板倍增,结合双近贴聚焦的结构和小尺寸的有效面积,研制成功了具有超快时间响应的微通道板光电倍增管,其脉冲上升时间的实际测量值达到了90 ps左右,使光电倍增管的时间特性有了很大的提高。