Design and Evaluation of DNS as Location Manager for HIP

Host Identity Protocol (HIP) is designed to provide secure and continuous communication by separating the identifier and locator roles of the Internet Protocol (IP) address. HIP also has efficient solutions to support host mobility. In this paper, we propose a location management scheme based on Domain Name System (DNS) for HIP. In the proposed scheme, a new DNS HIP resource record is used to translate a domain name into a host identity tag and an IP address. We also develop an analytical model to study the performance of DNS as location manager in terms of success rate, which takes into account the velocity of mobile nodes, the radius of a subnet, the regional network size, the packet transmission delay between the mobile node and the rendezvous server, and the packet processing delay at the DNS and the rendezvous server. The performance results show that for a reasonable range, the DNS is a feasible solution for location management with high success rate for HIP.

硫铵滚筒干燥器自动测控系统的应用研究

简述了硫铵滚筒干燥器的干燥原理及工艺流程,提出自动测控系统的控制要求及实现方案配置,给出了硫铵含水量控制调节、干燥器出口微负压控制调节、水溶雾沫除尘器等几个关键环节的测控原理及控制过程。     

K497与FGH741合金的热等静压扩散连接

采用热等静压（ＨＩＰ）固－固扩散连接工艺,研究了Ｋ４９７与ＦＧＨ７４１合金ＨＩＰ连接及热处理后的组织变化、结合界面的组织、力学性能及界面区元素的扩散规律。结果表明,在ＨＩＰ和热处理阶段,ＦＧＨ７４１合金未发生再结晶,其晶粒度与母材基本相同,均为ＡＳＴＭ５～６级,Ｋ４９７合金的粗大枝晶组织和共晶相经热处理后基本消除。结合界面冶金结合良好,形成了一个由亚晶和再结晶晶粒组成的界面区且无有害相析出。结合试     

热处理对热等静压SiP/Al-Cu复合材料显微组织和力学性能的影响

采用元素粉作为原料, 通过热等静压技术(HIP)制备出50%Si_P/Al-Cu和70%Si_P/Al-Cu(体积分数)复合材料, 研究固溶处理和峰值时效处理对复合材料显微组织、 Al₂Cu相溶解过程及力学性能的影响。结果表明: 热等静压技术制备的Si_P/Al-Cu复合材料完全致密, 组织均匀细小, 材料由Si相、 Al相和Al₂Cu组成, 白色Al₂Cu相产生于原始的Cu粉与Al粉界面处。在516 ℃固溶处理2 h后, 70%Si_P/Al-Cu复合材料中的Al₂Cu相全部溶入Al基体中, 而50%Si_P/Al-Cu复合材料中还残留少量Al₂Cu相。经过峰值时效处理后, 50%Si_P/Al-Cu和70%Si_P/Al-Cu复合材料的抗弯强度为548 MPa和404 MPa, 相对于热等静压态分别提高了38.81%和13.51%, 复合材料的强度显著增强。     

GPS—HIP烧结Si3N4基复合陶瓷材料的研究

采用ＧＰＳ烧结ＨＩＰ处理两步烧结Ｓｉ３Ｎ４基复合陶瓷材料,在ＧＰＳ烧结后使试件表面气孔闭合形成自身包套,而后通过ＨＩＰ处理可以明显提高烧结体的密度,可以获得抗弯强度〉７２０ＭＰａ,断裂韧性ＫＩＣ〉７．８ＭＰａ．ｍ＾１／２的高性能Ｓｉ３Ｎ４基复合陶瓷烧结体。而ＧＰＳ烧结所获得的由β－Ｓｉ３Ｎ４晶粒组成的网状显微结构对烧结体的性能是十分有益的．     

GPS—HIP工艺制备Si3N4陶瓷的研究

采用GPS（气压）-HIP（热等静压）后处理两步工艺制备氮化硅（Si2N4陶瓷,GPS烧结后使试样表面气孔闭合,而后通过HIP后处理减少烧结体内部的气孔数量和减小内部气孔尺寸,弥合表面裂纹等,从而提高了试样的物理、机械性能等。     

Internal friction of capsule-free HIPed porous alumina

Porous alumina were sintered by conventional sintering and capsule-free Hot Isostatic Pressing (HIPing), at temperatures between 800 and 1500 °C under pressures 0.1 MPa or 200 MPa for 1 h or 50 h. Young’s modulus and internal friction of samples were measured by resonance method. The results show that Young’s modulus is mainly dominated by porosity of material. Capsule-free HIPed porous materials have slightly higher Young’s modulus than conventionally sintered ones at the same porosity. Internal friction is governed by both porosity and specific surface area. Capsule-free HIPed porous alumina has lower internal friction coefficient than conventionally sintered ones at the similar porosity or at the similar specific surface area. Enhanced surface-self diffusion under high gas pressure reduces internal friction coefficient, and affects internal friction more than Young’s modulus.     

纯钒的高温力学性能及断口特征

采用热等静压法制备了纯钒样品,测试了纯钒在700~1100 ℃下的高温力学性能,分析了高温拉伸样品的断口形貌、金相组织。结果表明,随温度的升高,纯钒的强度及韧性均呈下降趋势。700~800 ℃,纯钒具有较好的高温强度及韧性,断口为韧性特征;900~1100 ℃,纯钒的力学性能急剧恶化,断口上出现了大量的解理面及一定的由高温蠕变导致的韧性沿晶,呈现出韧脆断共存的微观形貌;温度升高,解理面有长大趋势。     

HIP法制备CuCr触头的真空电击穿特性

采用热等静压(HIP)固相烧结法制备了近乎完全致密、低氧、氮含量的CuCr合金材料,研究了在不同烧结温度下制备CuCr合金的Cr相颗粒度、电击穿场强及击穿区域,给出了CuCr合金Cr相粒子半径与击穿场强的关系式.结果表明:随着HIP烧结温度的上升,CuCr触头材料的Cr相颗粒度也将逐渐增大,导致真空电击穿场强减小,与此...