全文获取类型
收费全文 | 11535篇 |
免费 | 1018篇 |
国内免费 | 818篇 |
专业分类
电工技术 | 440篇 |
综合类 | 772篇 |
化学工业 | 2682篇 |
金属工艺 | 797篇 |
机械仪表 | 345篇 |
建筑科学 | 327篇 |
矿业工程 | 141篇 |
能源动力 | 345篇 |
轻工业 | 965篇 |
水利工程 | 97篇 |
石油天然气 | 536篇 |
武器工业 | 77篇 |
无线电 | 1882篇 |
一般工业技术 | 853篇 |
冶金工业 | 516篇 |
原子能技术 | 247篇 |
自动化技术 | 2349篇 |
出版年
2024年 | 26篇 |
2023年 | 149篇 |
2022年 | 224篇 |
2021年 | 300篇 |
2020年 | 281篇 |
2019年 | 239篇 |
2018年 | 222篇 |
2017年 | 321篇 |
2016年 | 460篇 |
2015年 | 427篇 |
2014年 | 608篇 |
2013年 | 742篇 |
2012年 | 811篇 |
2011年 | 982篇 |
2010年 | 816篇 |
2009年 | 876篇 |
2008年 | 739篇 |
2007年 | 851篇 |
2006年 | 838篇 |
2005年 | 577篇 |
2004年 | 474篇 |
2003年 | 488篇 |
2002年 | 366篇 |
2001年 | 292篇 |
2000年 | 249篇 |
1999年 | 210篇 |
1998年 | 156篇 |
1997年 | 130篇 |
1996年 | 88篇 |
1995年 | 66篇 |
1994年 | 48篇 |
1993年 | 57篇 |
1992年 | 39篇 |
1991年 | 51篇 |
1990年 | 23篇 |
1989年 | 24篇 |
1988年 | 20篇 |
1987年 | 15篇 |
1986年 | 18篇 |
1985年 | 15篇 |
1984年 | 9篇 |
1983年 | 7篇 |
1982年 | 5篇 |
1981年 | 8篇 |
1980年 | 7篇 |
1976年 | 2篇 |
1975年 | 5篇 |
1968年 | 2篇 |
1966年 | 1篇 |
1951年 | 4篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
1.
For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (Ron,sp) of 2 mΩ cm2, which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively. 相似文献
2.
为了系统地评价胸腺五肽作为辅助药物治疗各种肺癌的疗效及其对机体免疫功能的影响,利用电子检索收集有关胸腺五肽联合放疗或化疗方案治疗肺癌的临床随机对照试验文献,对符合纳入标准的文献,采用RevMan5.3 软件进行系统评价。最终共纳入文献 9 篇,总样本量 784 例。Meta 分析结果表明,胸腺五肽作为辅助药物治疗各种肺癌提高总有效率的差异无统计学意义[OR = 1.44, 95%CI(0.99, 2.10), P =0.06 > 0.05]。在对免疫功能的影响方面,胸腺五肽的使用显著增高外周血中的 CD3+ 细胞水平[OR = 5.88, 95% CI(2.34, 9.42), P =0.001],CD4+ 细胞水平也显著上升[OR =8.32, 95%CI(5.22, 11.42), P < 0.00001] , CD4+ /CD8+比值也有明显的提高[OR = 0.38, 95% CI(0.18, 0.59), P=0.0002],但 CD8+ 细胞水平的差异无统计学意义[OR =-3.12, 95% CI ( -9.02, 2.79), P >0.05]。总的来说,本研究在一定程度上反映了在辅助治疗肺癌方面,胸腺五肽能显著提高外周血中的 CD3+ 细胞水平、CD4+ 细胞水平、CD4+/CD8+ 比值。而对于治疗的有效率、CD8+ 细胞水平,差异无统计学意义。 相似文献
3.
Fei Xu Xiangli Shi Qingzhu Zhang Wenxing Wang 《International journal of molecular sciences》2015,16(8):18714-18731
The chlorothiophenoxy radicals (CTPRs) are key intermediate species in the formation of polychlorinated dibenzothiophenes/thianthrenes (PCDT/TAs). In this work, the formation of CTPRs from the complete series reactions of 19 chlorothiophenol (CTP) congeners with H and OH radicals were investigated theoretically by using the density functional theory (DFT) method. The profiles of the potential energy surface were constructed at the MPWB1K/6-311+G(3df,2p)//MPWB1K/6-31+G(d,p) level. The rate constants were evaluated by the canonical variational transition-state (CVT) theory with the small curvature tunneling (SCT) contribution at 600–1200 K. The present study indicates that the structural parameters, thermal data, and rate constants as well as the formation potential of CTPRs from CTPs are strongly dominated by the chlorine substitution at the ortho-position of CTPs. Comparison with the study of formation of chlorophenoxy radicals (CPRs) from chlorophenols (CPs) clearly shows that the thiophenoxyl-hydrogen abstraction from CTPs by H is more efficient than the phenoxyl-hydrogen abstraction from CPs by H, whereas the thiophenoxyl-hydrogen abstraction from CTPs by OH is less impactful than the phenoxyl-hydrogen abstraction from CPs by OH. Reactions of CTPs with H can occur more readily than that of CTPs with OH, which is opposite to the reactivity comparison of CPs with H and OH. 相似文献
4.
《Ceramics International》2020,46(3):2868-2876
In order to improve the stability of PZT-based sensors, the mechanical, dielectric, ferroelectric and piezoelectric properties of PZT-5H under impact load were studied experimentally by using the separated Hopkinson pressure bar (SHPB) with an electrical output measurement device. At the same time, the experimental study on the material properties of PZT-5H before and after the impact was carried out. The effect of impact cracks on the output voltage of PZT-5H was also analyzed. The results show that the dynamic piezoelectric constants of PZT-5H under low stress impact (10–50 MPa) are different from those under quasi-static state, and the empirical relationship between them and the peak stress is obtained through experiments. The dielectric properties of PZT-5H did not change under low stress impact, but micro-cracks occurred in the material and dielectric loss increased at high frequencies. Under short circuit, the residual polarization intensity of PZT-5H decreases sharply due to impact load. While the impact load causes the secondary polarization and the increase of the residual polarization intensity of PZT under open circuit. When the stress is over 45 MPa, the PZT-5H breaks. The formation of cracks causes abnormal discharge voltage and gap discharge. 相似文献
5.
6.
1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm2 is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm2 array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall Vmin of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances. 相似文献
7.
8.
9.
10.