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1.
《Ceramics International》2022,48(11):15056-15063
Hydrogen (H2) sensors based on metal oxide semiconductors (MOS) are promising for many applications such as a rocket propellant, industrial gas and the safety of storage. However, poor selectivity at low analyte concentrations, and independent response on high humidity limit the practical applications. Herein, we designed rGO-wrapped SnO2–Pd porous hollow spheres composite (SnO2–Pd@rGO) for high performance H2 sensor. The porous hollow structure was from the carbon sphere template. The rGO wrapping was via self-assembly of GO on SnO2-based spheres with subsequent thermal reduction in H2 ambient. This sensor exhibited excellently selective H2 sensing performances at 390 °C, linear response over a broad concentration range (0.1–1000 ppm) with recovery time of only 3 s, a high response of ~8 to 0.1 ppm H2 in a minute, and acceptable stability under high humidity conditions (e. g. 80%). The calculated detection limit of 16.5 ppb opened up the possibility of trace H2 monitoring. Furthermore, this sensor demonstrated certain response to H2 at the minimum concentration of 50 ppm at 130 °C. These performances mainly benefited from the special hollow porous structure with abundant heterojunctions, the catalysis of the doped-PdOx, the relative hydrophobic surface from rGO, and the deoxygenation after H2 reduction. 相似文献
2.
ABSTRACTIn this paper, we review some algebraic control system. Precisely, linear and bilinear systems on Euclidean spaces and invariant and linear systems on Lie groups. The fourth classes of systems have a common issue: to any class, there exists an associated subgroup. From this object, we survey the controllability property. Especially, from those coming from our contribution to the theory. 相似文献
3.
Australia's electricity market is rapidly adding renewable energy generation. Utility-scale batteries could have a major role in facilitating these transitions; however, their deployment is still largely state-subsidized. We summarize the current and future roles for batteries from a legal-economic perspective in the context of Australia's electricity market framework. We find that the future of batteries in Australia is not only a function of the large-scale deployment of renewables, their cost development and the comparative future cost of competing gas turbines but also of national electricity market and state policy reforms focusing on reliability. 相似文献
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5.
《Intermetallics》2015
Fine-grained fully-lamellar (FL) microstructure is desired for TiAl components to serve as compressor/turbine blades and turbocharger turbine wheels. This study deals with the process and phase transformation to produce FL microstructure for Mo stabilized beta-gamma TiAl alloys without single α-phase field. Unlike the α + γ two-phased TiAl or beta-gamma TiAl with single α-phase field, the wrought multi-phase TiAl–4/6Nb–2Mo–B/Y alloys exhibit special annealing process to obtain FL microstructure. Short-term annealing at temperatures slightly above β-transus is recommended to produce the desired FL microstructure. The related mechanism is to guarantee the sufficient diffusion homogenization of β stabilizers during single β-phase annealing, and further avoid α decomposition by α → γ + β when cooling through α + β + γ phase field. The colony boundary β phase contributes to fine-grained nearly FL microstructure, by retarding the coarsening of the α phase grains. 相似文献
6.
Han Yan Gu Yi Chen Lei Li Bing Liu Xiang Ming Chen 《International Journal of Applied Ceramic Technology》2020,17(2):790-796
SrLa[Ga1−x(R0.5Ti0.5)x]O4 (R = Mg, Zn) ceramics were prepared by a standard solid state sintering method. The single-phase ceramics with K2NiF4-type layered perovskite structure and I4/mmm space group were obtained, indicating that SrLa(R0.5Ti0.5) and SrLaGaO4 can form the unlimited solid solutions. With increasing x for R = Mg and Zn, εr increases monotonously, the Qf value first increases and then decreases, while τf increases from a negative to a positive value. The optimized microwave dielectric properties were obtained as following: εr = 23.3, Qf = 89 400 GHz, τf = −0.8 ppm/°C for SrLa[Ga0.6(Mg0.5Ti0.5)0.4]O4 and εr = 23.3, Qf = 76 200 GHz, τf = 0.2 ppm/°C for SrLa[Ga0.7(Zn0.5Ti0.5)0.3]O4, indicating that the present solid solution ceramics are the promising candidates as microwave resonator materials for the telecommunication applications. 相似文献
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8.
1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm2 is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm2 array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall Vmin of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances. 相似文献
9.
ZnO基薄膜晶体管的研究 总被引:2,自引:1,他引:1
ZnO是一种宽带隙的光电半导体材料,能应用于很多领域,如可用在压敏变阻器、声表面波器件、气敏元件、紫外光探测等。ZnO也可以作为有源层应用于薄膜晶体管(TFT)中。ZnO基薄膜晶体管具有以下突出优势:对于可见光部分平均具有80%以上的透射率,迁移率可以高达36cm2/V·s,开/关电流比大于106,可在较低温度(甚至室温)下制备。基于这些优点,ZnOTFT具有取代有源矩阵液晶显示器中常规a-SiTFT的趋势。同时对ZnOTFT的研究也推动了透明电子学的发展。本文阐述了ZnOTFT优越的电学性能,指出了其目前尚存在的不足,并对其发展前景进行了展望。 相似文献
10.