黑龙江省节水增粮行动(2012—2015年)实施方案

文章通过对黑龙江省高效节水现状,存在问题的分析,结合黑龙江省高效节水发展的支撑能力,阐述黑龙江省节水增粮目标、任务及总体布局,为黑龙江省2012—2015年节水增粮实施提供依据。     

Graphite Oxide and Aromatic Amines: Size Matters

Experimental and theoretical studies are performed in order to illuminate, for first time, the intercalation mechanism of polycyclic aromatic molecules into graphite oxide. Two representative molecules of this family, aniline and naphthalene amine are investigated. After intercalation, aniline molecules prefer to covalently connect to the graphene oxide matrix via chemical grafting, while napthalene amine molecules bind with the graphene oxide surface through π–π interactions. The presence of intercalated aromatic molecules between the graphene oxide layers is demonstrated by X‐ray diffraction, while the type of interaction between graphene oxide and polycyclic organic molecules is elucidated by X‐ray photoelectron spectroscopy. Combined quantum mechanical and molecular mechanical calculations describe the intercalation mechanism and the aniline grafting, rationalizing the experimental data. The present work opens new perspectives for the interaction of various aromatic molecules with graphite oxide and the so‐called “intercalation chemistry”.     

Synthesis and characterization of Manganese doped Tungsten oxide by Microwave irradiation method

The aim of this article is to synthesis tungsten oxide (WO₃) nanoparticle along with Manganese (3 wt% and 10 wt%) by Microwave irradiation method. The physical properties of the synthesized Manganese doped Tungsten oxide materials were characterized by X-Ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR), Transmission Electron Microscope (TEM), UV-Diffuse Reflectance Spectroscopy, SEM-EDAX and Photoluminescence studies. The predominant peaks obtained in X-ray diffraction pattern reveal the crystalline nature of the nanoparticles and the structure belongs to Monoclinic for pure and Mn doped WO₃. FTIR analysis shows the presence of Tungsten and oxygen in the synthesis material and verified with EDAX. TEM analysis shows both pristine and Mn doped WO₃ nanopaticles. They are having spherical shaped morphology with average particle size from 35 to 40 nm. UV-DRS revealed that the bandgap energy for pure and Manganese doped WO₃ are discussed in this article. The Scanning Electron Microscope analysis shows the plate like morphology for pure WO₃ and the morphology were decreased by doping Manganese. The defects and oxygen deficiencies were analysed by photoluminescence spectroscopy.     

Efficient hydrogen production for industry and electricity storage via high-temperature electrolysis

The paper describes the development status of Sunfire's reversible solid oxide cell (RSOC) technology. Here, Sunfire is a pioneer in the field of high-temperature electrolysers (HTE) for renewable hydrogen production which can be operated as a fuel cell for power generation in a reverse mode. The maturity of the technology is improved stepwise so that first applications in the field of hydrogen production for industry and electricity storage can be tackled. Three application examples where larger scale prototype has been installed will be discussed: 1) A power-to-power electricity storage based on hydrogen, 2) a RSOC unit that is installed in an iron and steel works, and 3) a pressurized SOEC prototype which will be integrated with a methanation unit. Results show the potentials of the technology in connection with fluctuating renewable energy sources.     

高效液相色谱法测定多环芳烃的出峰顺序探讨

目的探讨水﹑气﹑土壤中多环芳烃检测标准(HJ 478-2009﹑HJ 647-2013、HJ 784-2016)的正确出峰时间和顺序。方法用高效液相色谱来对苊烯、芴、苊、?、苯并(a)蒽进行定性分析,并与3个标准中的出峰顺序进行比较。结果苊烯、苊、芴、苯并(a)蒽、?的出峰时间分别为6.450、7.923、8.233、17.760、18.740min,与标准HJ478-2009﹑HJ647-2013的出峰顺序存在差异。结论在使用标准HJ478-2009﹑HJ647-2013、HJ 784-2016同时测定16种多环芳烃时,多环芳烃的出峰顺序及时间应以HJ 784-2016为准。     

Charge injection in metal/organic/metal structures with ZnO:Al/organic interface modified by Zn1−xMgxO:Al layer

Aluminum-doped zinc oxide (ZnO:Al, AZO) electrodes were covered with very thin (∼6 nm) Zn_1−xMg_xO:Al (AMZO) layers grown by atomic layer deposition. They were tested as hole blocking/electron injecting contacts to organic semiconductors. Depending on the ALD growth conditions, the magnesium content at the film surface varied from x = 0 to x = 0.6. Magnesium was present only at the ZnO:Al surface and subsurface regions and did not diffuse into deeper parts of the layer. The work function of the AZO/AMZO (x = 0.3) film was 3.4 eV (based on the ultraviolet photoelectron spectroscopy). To investigate carrier injection properties of such contacts, single layer organic structures with either pentacene or 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine layers were prepared. Deposition of the AMZO layers with x = 0.3 resulted in a decrease of the reverse currents by 1–2 orders of magnitude and an improvement of the diode rectification. The AMZO layer improved hole blocking/electron injecting properties of the AZO electrodes. The analysis of the current-voltage characteristics by a differential approach revealed a richer injection and recombination mechanisms in the structures containing the additional AMZO layer. Among those mechanisms, monomolecular, bimolecular and superhigh injection were identified.     

Enhancement of optical and electrical properties of SILAR deposited ZnO thin films through fluorine doping and vacuum annealing for photovoltaic applications

Undoped and fluorine doped ZnO thin films were deposited onto glass substrates using successive ionic layer adsorption and reaction (SILAR) technique and then annealed at 350 °C in vacuum ambience. The F doping level was varied from 0 to 15 at% in steps of 5 at%. The XRD analysis showed that all the films are polycrystalline with hexagonal wurtzite structure and preferentially oriented along the (002) plane. Crystallite sizes were found to increase when 5 at% of F is doped and then decreased with further doping. It was seen from the SEM images that the doping causes remarkable changes in the surface morphology and the annealing treatment results in well-defined grains with an improvement in the grain size irrespective of doping level. All the films exhibit good transparency (>70%) after vacuum annealing. Electrical resistivity of the film was found to be minimum (1.32×10⁻³ Ω cm) when the fluorine doping level was 5 at%.