排序方式: 共有93条查询结果,搜索用时 15 毫秒
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采用磁控溅射方法,在Si衬底上制备HfTaON高k栅介质,研究了AlON、HfON、TaON不同界面层对MOS器件电特性的影响。结果表明,HfTaON/AlON叠层栅介质结构由于在AlON界面层附近形成一种Hf-Al-O"熵稳定"的亚稳态结构,且AlON具有较高的结晶温度、与Si接触有好的界面特性等,使制备的MOS器件表现出优良的电性能:低的界面态密度、低的栅极漏电、高的可靠性以及高的等效k值(21.2)。此外,N元素的加入可以抑制Hf和Ta的扩散,有效抑制界面态的产生,并使器件具有优良的抵抗高场应力的能力。 相似文献
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Introduction High- k gate dielectrics have been extensivelystudied as alternates to conventional gate oxide( Si O2 ) due to the aggressive downscaling of Si O2thickness in CMOS devices,and hence the exces-sive gate leakage.Hf O2 has emerged as one... 相似文献
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超薄HfN界面层对HfO_2栅介质Ge pMOSFET电性能的改进 总被引:1,自引:0,他引:1
通过在高k介质和Ge表面引入一层超薄HfN界面层,实验制备了HfO2/HfON叠层栅介质Ge MOS器件。与没有界面层的样品相比,HfO2/HfON叠层栅介质MOSFET表现出低的界面态密度、低的栅极漏电和高有效迁移率。因此利用HfON作为Ge MOS器件的界面钝化层对于获得小的等效氧化物厚度和高的high-k/Ge界面质量有着重要的意义。 相似文献
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SHANG LiWei JI ZhuoYu CHEN YingPin WANG Hong LIU Xin HAN MaiXin & LIU Ming Key Laboratory of Nanofabrication Novel Devices Integration Technology 《中国科学:信息科学(英文版)》2011,(1)
Low voltage operating organic devices and circuits have been realized using atomic layer deposition deposited aluminum oxide thin film as dielectric layer. The dielectric film has per unit area capacitance of 165 nF/cm2 and leakage current of 1 nA/cm2 at 1 MV/cm. The devices and circuits use the small-molecule hydrocarbon pentacene as the active semiconductor material. Transistors,inverters,and ring oscillators with operating voltage lower than 5 V were obtained. The mobility of organic field-effect transis... 相似文献
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A novel dry etching process of a poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor(CMOS) devices is investigated.Our strategy to process a poly-Si/TaN/HfSiON gate stack is that each layer of gate stack is selectively etched with a vertical profile.First,a three-step plasma etching process is developed to get a vertical poly-Si profile and a reliable etch-stop on a TaN metal gate.Then different BCl3-based plasmas are applied to etch the TaN metal gate and find that BCl3/Cl2/O2/Ar plasma is a suitable choice to get a vertical TaN profile.Moreover,considering that Cl2 almost has no selectivity to Si substrate, BCl3/Ar plasma is applied to etch HfSiON dielectric to improve the selectivity to Si substrate after the TaN metal gate is vertically etched off by the optimized BCl3/Cl2/O2/Ar plasma.Finally,we have succeeded in etching a poly-Si/TaN/HfSiON stack with a vertical profile and almost no Si loss utilizing these new etching technologies. 相似文献
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高k栅介质的可靠性问题 总被引:1,自引:0,他引:1
随着集成电路特征尺寸的不断缩短,利用先进的高k/金属栅堆叠来取代传统的SiO2/多晶硅栅结构成为微电子技术发展的必然,确保这些新的栅极堆叠类型具有足够的可靠性是非常重要的.综述了高k栅介质可靠性的研究现状,阐明了瞬态充电效应导致的阈值电压不可靠问题,对偏压温度不稳定现象(BTI)和高k击穿特性进行了探讨. 相似文献
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