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1.
2.
聚硅烷的电子特性及非线性光学材料   总被引:3,自引:0,他引:3  
雷艳秋  黄世强 《弹性体》2003,13(4):50-54
综述了聚硅烷的电子结构、光吸收特性。重点介绍了聚硅烷在非线性光学材料中的研究与应用。  相似文献   
3.
Cif2000平台下的核磁共振测井解谱方法研究   总被引:3,自引:0,他引:3  
王才志  李宁 《测井技术》2002,26(5):360-363
介绍了在Cif2000多井解释平台下的核磁共振解谱方法与编程实现。解谱采用加入平滑因子后在特征矩阵的奇异值分解中截去小的非零奇异值的方法,可以在低信噪比时得到稳定的弛豫谱,在油田实际应用中证明了该方法的有效性。根据该方法在Cif2000平台上编制了完整的解谱处理程序,可以直接用于油田的生产实际。  相似文献   
4.
Using the SiO2 and Al2O3 components of the amorphous phase in coal fly ash (Fa), Fa was converted to Na-X zeolites in NaOH-NaAlO2 solutions by stirring at 35°C for 72 hr and then aging at 85°C for a given period. The molar ratio SiO2/Al2O3 of the starting materials was controlled from 2.0 to 13.2. The resulting materials were characterized by various means. Increasing the SiO2/Al2O3 ratio of the starting material increased the degree of crystallinity of faujasite, exhibiting a maximum at SiO2/Al2O3 = 8.0. The faujasite formed was identified as Na-X zeolite with Si/Al = 1.20. The amorphous phase in Fa was dissolved during the stirring to form a precursor of zeolite, such as amorphous aluminosilicate. The Na-X zeolite was formed by aging for 24 hr, and the degree of crystallinity of this material was increased with the increasing aging period. The cation exchange capacity and specific surface area were increased with the increasing degree of crystallinity of the Na-X zeolites.  相似文献   
5.
The Co/MFI(SiO2/Al2O3 = 30) were prepared by a precipitation method with NaOCl in alkali solutions exhibited high activities to N2 at 250 °C for the selective catalytic reduction (SCR) of NOx. These catalysts showed two UV–vis bands at 700 and 400 nm, indicating the presence of octahedral Co(III) as well as tetrahedral Co(II). The high SCR activity over such Co(III, II)/MFI(30) seems to come from Co(III)---O moieties. The Co(II)MFI(30) catalysts prepared from Co(II)Cl2 exhibited low SCR activities due to the presence of tetrahedral Co(II) ions in MFI. Less CO formation occurred over Co/MFI catalysts. The Fe/MFI(30) catalyst exhibited high activity due to the presence of some Fe---O species in MFI but more amount of CO were produced during SCR. H/MFI(30) catalyst exhibited a good SCR activity. However, more amount of carbonaceous deposits were produced on it. The correlation between acid concentration and SCR activity was discussed over H/MFIs.  相似文献   
6.
Symmetrically substituted 1,3-diynes containing hydroxyalkyl ( 1a-d ), bromoalkyl ( 1e-h ) (diphenylphosphinyl) ( 1i-k ) and carboxyalkyl ( 2a-d ) substituents have been prepared and characterised; the phosphine derivative ( 1k ) has been converted with alkyl iodides ( RI ; R = Me, Et) into bis(phosphonium) salts ( 1l and m ). During preparation of the diynedioic acid. ( 2a ), the non-centrosymmetrical diyne, HO2CCH2C?C—C?C(CH2)2OH ( 3 ), was also isolated. 60Co γ-Irradiation of diacetylene monomers ( 2a – d ) and 10,12-tricosadiyn-1-oic acid gave the corresponding polydiacetylene derivatives ( 4a – d and 5 ), respectively. Rubidium salts of ( 4c ) and ( 4d ), a barium salt of ( 4c ), and a potassium salt of ( 5 ) were prepared and isolated; soluble potassium salts of the carboxylic acid polymers ( 4 ) were generated in aqueous solution. The effects of changes in pH on the UV/visible absorption spectra of aqueous solutions of selected carboxylic acid polydiacetylenes have been recorded, and are discussed.  相似文献   
7.
In this paper, we present the theory for calculating Raman line shapes as functions of the Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities between 1016 cm−3 and 1019 cm−3. Compared to other theories, this theory is unique in two respects: 1) the many-body effects are treated self-consistently and 2) the theory is valid at room temperature for arbitrary values of the ratio R = (Q2/α), where Q is the magnitude of the normalized wave vector and α is the normalized frequency used in the Raman measurements. These calculations solve the charge neutrality equation self-consistently for a two-band model of GaAs at 300 K that includes the effects of high carrier concentrations and dopant densities on the perturbed densities of states used to calculate the Fermi energy as a function of temperature. The results are then applied to obtain the carrier concentrations from Fermi energies in the context of line shapes in Raman spectra due to the coupling between longitudinal optical phonons and plasmons. Raman measurements have been proposed as a non-destructive method for wafer acceptance tests of carrier density in semiconductor epilayers. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort involving experiments, theory, and computer-based simulations and visualizations of the theoretical calculations.  相似文献   
8.
源气体流量比对F-DLC薄膜结构的影响   总被引:3,自引:1,他引:2  
以高纯石墨作靶,CHF3/Ar作源气体采用反应磁控溅射法制备出了氟化类金刚石(F-DLC)薄膜。拉曼光谱表明,CHF3相对流量的增加会引起薄膜的D峰与G峰强度之比I(D)/I(G)减小,晶粒增大,芳香环结构出例下降。红外吸收光谱分析证实了这些推论,指出这是由于薄膜中氟含量上升的结果。  相似文献   
9.
The photoconductive properties of a carotenoid polyene,β-Apo-8′ carotenal in polycrystalline form has been studied. The growth of the photocurrent shows an overshoot in the growth-time curve before steady state value is attained. This behaviour of photocurrent is proposed to be due to higher value of recombination coefficient than trapping coefficient. From the temperature dependence study it is observed that the steady state photocurrent, at first increases with increase of temperature, attains a maximum at a particular temperatureT max and then decreases with temperature. TheT max value agrees with the temperature above and below which steady state photocurrent is attained differently. Monomolecular and bimolecular recombination processes at two temperature regimes are proposed to account for the observed behaviour. The dependence of photocurrent with excitation light intensity and wavelength study provide information on the carrier generation processes. The fast decay of photocurrent have been observed at different temperatures and from this study the decay constant is calculated and it is found to be temperature independent.  相似文献   
10.
GaP:(N)的背景光谱和发光尖峰   总被引:1,自引:0,他引:1  
获得高分辨GaP(N)光致发光光谱,观察到等电子陷陆束缚激子发光中LO和loc多声子发射,其强度分布答合泊松分布。将声子伴带区分为直接光跃迁和间接光跃迁,并进行了相应讨论,还观察到局域声子效应--光谱相似定律和相当显著的背景光谱。  相似文献   
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