On the improvement of detection characteristics of trans-stilbene crystals by improving crystal perfection

Organic molecular scintillating crystals are noted for their good timing and particle discrimination process. Trans-stilbene is one such candidate noted for its good particle detection characteristics for the past five decades. Progressive strengthening of detection characteristics of trans-stilbene has been attempted by improving crystal perfection. A series of timing resolution studies have been carried out for the Bridgman grown trans-stilbene crystals under different experimental conditions. The results were compared with the previously reported values. Pulse shape discrimination process has been carried out for ²⁴¹Am and ²⁵²Cf sources and good discrimination has been obtained for gamma-alpha and gamma-neutron sources from the grown organic phosphor crystal. Electronic Publication     

Al-B4C复合材料中子吸收性能研究

利用蒙特卡罗方法和~(252)Cf中子源研究了在准直热中子入射束下,15%~30%(质量分数)碳化硼含量的Al-B_4C复合材料的中子吸收系数和宏观截面。结果表明,Al-B_4C复合材料的中子吸收系数随碳化硼含量增加而增大,相同碳化硼含量的材料其中子吸收系数随厚度的增加按指数规律变化;~(252)Cf中子源测试得到的中子吸收系数比0.0253eV单能热中子计算得到的吸收系数低0.5%~4.3%;Al-B_4C复合材料的宏观截面随着碳化硼含量的增加呈线性递增的关系,而且理想热中子0.0253eV下的递增率(0.97925cm~(-1)/%)大于~(252)Cf中子源构建0~1eV中子下的递增率(0.58537cm~(-1)/%)。     

252Cf 随机脉冲源法测量深次临界瞬发中子衰减常数

运用²⁵²Cf 随机脉冲源法时幅变换(TAC)方式测量系统,实验获得高浓缩铀椭球壳核系统的瞬发中子衰减常数α。采用单指数和双指数最小二乘法拟合，α值均为100μs^-1。用蒙特卡罗方法模拟实验过程，α计算值为110μs^-1。结果表明，该系统对深次临界α的测量是有效的。     

252Cf中子活化核燃料棒235U富集度均匀性检测装置

采用^252Cf中子活化方法研制燃料棒^235U富集度均匀性检测设备，用慢化后的^252Cf中子照射燃料棒，使燃料棒UO2芯块中的^235U发生裂变，通过测量其裂变产物的γ射线总强度对燃料棒^235U富集度及其均匀性进行在线检测。采用1．2mg的^252Cf中子源，能检测出燃料棒中^235U富集度相对偏差土10％的单个混料芯块，单根燃料棒的检测速度可达7m/min，检测结果的置信概率为97．74％。     

Influence of the SiC matrix introduction time on the microstructure and mechanical properties of Cf/Hf0.5Zr0.5C-SiC ultra-high temperature composites

C_f/Hf_0.5Zr_0.5C-SiC composites were prepared by introducing Hf_0.5Zr_0.5C matrix (11 cycles) and SiC matrix (9 cycles) into the carbon cloth preform through precursor impregnation and pyrolysis (PIP) process. The influence of the introduction time of SiC matrix on the microstructure and mechanical properties of C_f/Hf_0.5Zr_0.5C-SiC composites was studied, and the results show that with the increase of the PIP cycles of the SiC matrix introduced before Hf_0.5Zr_0.5C matrix, the composite open porosity decreased, and the flexural strength and modulus presented an obvious upward trend. CS45 sample, which has 4 cycles of PIP SiC introduced in advance, has the highest flexural strength, flexural modulus and interfacial shear strength of 402.73 ± 35.73 MPa, 56.92 ± 3.97 GPa and 100.88 ± 7.79 MPa, respectively. Hf_0.5Zr_0.5C matrix has a loose and porous structure, so when more SiC matrix was introduced in advance, its covering effect on the surface of fibers led to less intra-bundle pores and thusly denser composite structure, and due to the compactness of SiC matrix, better overall bonding of fiber, interface and matrix was achieved, as well as better load transfer effect, which led to obvious interfacial debonding and cracking based on the in-situ SEM observation during flexural tests. While in the sample without pre-introduced SiC, the cracking occurred mainly between the interface and porous matrix and the overall performance of the material was poor.     

Improved calculation of Si sputter yield via first principles derived interatomic potential

Silicon sputter yield under medium energy Ar+ ion bombardment is calculated via molecular dynamics, using a highly accurate interatomic potential for Ar-Si interactions derived from first-principles calculations. Unlike the widely used universal repulsive potentials such as the Moliere or ZBL parameterizations, this new potential, referred to as DFT-ArSi, is developed via localized basis density functional theory. Sputter yields for Si obtained with the DFT-ArSi potential at 500 eV and 1 keV incident energies are found to be within 6% and 2% of experimental results, respectively, while errors using existing potentials are typically on the order of 11%. The DFT-ArSi potential differs from existing empirical potentials in the ∼1 Å interatomic separation range which is shown to be the most important range for modeling low-to-medium energy ion bombardment.     

LSI低成本制备Cf/SiC复合材料工艺研究

采用一次性液相硅浸渍法(LSI)制备低成本的Cf/C-SiC复合材料。以PAN基平板碳毡为增强体,在酚醛树脂溶液中添加碳化硅微粉,探讨添加碳化硅浓度、浸渍压力及保压时间等因素对一次液相浸渍效果的影响。通过显微分析,当压力为1.2 MPa,浸渍时间为60 min时,可以获得最大的致密度,最终复合材料密度达2.64 g/cm3。     

Cf/SiC复合材料表面沉积铱膜层工艺研究

为了进一步提高Cf/SiC复合材料的高温耐烧蚀性能,采用冷壁MOCVD工艺,对条型和管型Cf/SiC复合材料样品进行了金属铱膜层沉积。结果表明,在该工艺条件下,Cf/SiC复合材料的力学性能没有明显降低,沉积的金属铱膜呈白亮的金属色光泽。针对通氧沉积工艺中涂层氧含量较多的问题,通过对涂层进行后处理,使金属铱层的纯度大大提高,为获得高纯膜提供了新的工艺途径。     

Cf/SiC复合材料低温铣削工艺优化研究

对超硬金刚石刀具低温铣削Cf/SiC复合材料进行工艺优化研究,主要研究聚晶金刚石刀具低温铣削Cf/SiC复合材料过程中,低温冷却介质(干冰、液氮)和冷却工艺参数(阀体出口压力和喷嘴喷射角度)对切削力、加工表面完整性和切屑的影响规律.研究表明:在干冰、液氮低温介质的冷却作用下,工件的加工表面质量得到了较大提高,主切削力显...     

有机前驱体中添加ZrB2和SiC微粉制备Cf/SiC-ZrB2复合材料

通过在有机前驱体溶液中加入惰性填料ZrB_2和SiC微粉,制备了C_f/SiC-ZrB_2复合材料。分别研究了三组不同含量的料浆对复合材料浸渍裂解效果的影响,并借助扫描电镜(SEM)和能谱分析(EDS)对制备的Cf/SiC-ZrB2复合材料的微观结构和元素组成进行了分析。研究表明:在有机前驱体溶液中添加无机粉体浸渍复合材料能够起到缩短制备周期、提高材料强度的目的。当加入惰性填料的质量分数为15%时,能够在8个制备周期内将复合材料的密度快速提升到2.0g?cm~(-3),而且制备的材料内部结构致密,力学性能优异。