In-situ TEM observation of structural changes in nano-crystalline CoCrCuFeNi multicomponent high-entropy alloy (HEA) under fast electron irradiation by high voltage electron microscopy (HVEM)

The structural changes induced in a CoCrCuFeNi multicomponent nano-crystalline high-entropy alloy (HEA) under fast electron irradiation were investigated by in-situ transmission electron microscopy (TEM) using a high voltage electron microscope (HVEM). A fine-grained face centered cubic (fcc) single phase was obtained in the sputtered specimens. The fcc solid solution showed high phase stability against irradiation over a wide temperature range from 298 to 773 K, and remained as the main constituent phase even when the samples were irradiated up to 40 displacement per atom (dpa). Moreover, the irradiation did not seem to induce grain coarsening. This is the first report on the irradiation damage in 5-component HEA under MeV electron irradiation.     

荷能束辐照致使Cu/Ag表面偏析的研究

本文研究了金属(Cu)/金属(Ag衬底)系统的荷能束辐照引起的表面偏析现象。观察到Cu在多晶Ag衬底上溅射淀积过程中,Ag原子在Cu膜表面的偏析,且淀积Cu原子能量越大,Ag原子偏析程度越大,即观察到了淀积Cu原子10~(-1)～1eV量级的平均能量差异对膜层表面偏析行为的影响。对溅射淀积所得膜层进行keV量级的离子束辐照,Ag原子的表面偏析程度更甚。     

辐照技术在聚丙烯材料制备和改性中的应用

利用辐照的手段,来制备功能化的聚丙烯材料,在获得新功能的同时,不改变聚丙烯原有的优点,并综述了辐照技术在聚丙烯材料制备和改性中的研究及应用情况     

辐射技术在食品加工中的应用

综述了食品辐射加工的原理及其作用效果，以及该技术在欧美的应用现状及存在的发展障碍。     

Ion irradiation—induced structure damage to botanic samples using the ion transmission energy spectrum

1 INTRODUCTIONThe new aPplications of low energy heavy ion beam in irradi4ted botanical materialswere studied in recellt yeaxs. The beaminduced mutation effect on crop seeds has causedthe attention of physicist and biologists.[1l:] FOr examPle, 1ow energy ions can induceremarkable mutation to rice seeds.[3] There are many special phenomena when heavyions bombard botanic sW1e due to its special structure. Some studies showed that tllepenetration depths of some ions were far larger than t…     

Magnetic force microscopy studies on the magnetic ordering in organic materials induced by high-energy proton irradiation

In this study, ferromagnetic microstructures in highly oriented pyrolytic graphite and superparamagnetic spots in polyimide foils were created by 2.25 MeV proton microbeam irradiation and characterized using atomic and magnetic force microscopy. For this purpose, graphite samples were irradiated with cross-like patterns of 15 μm × 15 μm size using ion fluences in the range of (0.003–2.5) × 10¹⁸ cm⁻². The irradiated crosses showed strong magnetic signals and a complex domain structure in the magnetic images depending on the geometrical dimensions of the crosses. Furthermore, polyimide foils were irradiated with microspots and fluences in the range of (0.016–3.1) × 10¹⁹ cm⁻². Magnetic force microscopy shows very strong phase shifts in these irradiated areas.     

^60Coγ射线对刚地弓形虫缓殖子感染性的影响

应用不同剂量的~(60)Coγ射线照射含NT株弓形虫包囊的鼠脑匀浆后,以0.4％胰蛋白酶液消化,使弓形虫缓殖子从包囊中释放出来,并用生理盐水作连续10倍稀释,使成为含不同数量缓殖子的悬液,将此悬液接种小鼠,用生物检测方法确定其感染性。另设未经照射处理的缓殖子悬液感染小鼠的对照组。结果表明,γ射线0.55kGy剂量为控制鼠脑中NT株弓形虫感染性的最小有效剂量。γ射线0.1kGy剂量对弓形虫缓殖子感染性无明显影响,而0.45kGy照射后,其感染性较前者下降了10~4倍。     

可降解温敏型共聚物PLGA-PEG-PLGA的合成及辐照法分子量调整

合成了不同嵌段的可降解的温敏型聚乙交酯丙交酯-聚乙二醇-聚乙交酯丙交酯共聚物（DL—lactide—co—glycolide-b-ethylene glycol—b—DL—lactide—co—glycolide，PLGA-PEG—PLGA）。用红外、核磁共振、凝胶渗透色谱等表征了其化学结构、分子量及分子量分布，研究了其相变过程。用辐照法成功地进行了PLGA—PEG—PLGA分子量调整。实验结果表明，在反应温度150℃催化剂辛酸亚锡0．04g反应8h，5．08g乙交酯与12．61g丙交酯（摩尔比为1：2）的条件下，产物溶于水后得到的水凝胶具有明显的相变过程。不同分子量的共聚物相变温度不同，在同定聚乙二醇分子量且共聚物溶液浓度相同条件下，共聚物中丙交酯与乙交酯比例越高，共聚物分子量越大，相同浓度下的分子量越大的共聚物形成的溶胶，凝胶转变温度越低，凝胶-溶胶转变温度越高。当辐照20kGy样品的分子量分布最大，从而改变凝胶的相变温度。     

Irradiation Defects in Silicon Crystal

The application of irradiation in silicon crystal is introduced.The defects caused by irradiation are reviewed and some major ways of studying defects in irradiated silicon are summarized.Furthermore the problems in the investigation of irradiated silicon are discussed as well as its properties.     

Lifetime control in silicon power P-i-N diode by ion irradiation: Suppression of undesired leakage

The irradiation with high-energy (7.35 MeV) protons through a set of energy degraders was used to suppress leakage of the silicon power diodes subjected to local lifetime control. The aim was to modify the profile of recombination centers and to reduce production of vacancy complexes. The high-energy proton irradiation was compared with standard local lifetime killing by high-energy alphas. Recombination centers arising from irradiation were characterized after irradiation and subsequent annealing at 220 and 350 °C by deep level transient spectroscopy and I-V profiling. Static and dynamic parameters of irradiated diodes were also measured and compared. Results show that the applied irradiation with protons provides 3-10 times lower leakage compared to standard alphas for equivalent reduction of the reverse recovery current maximum. On the other hand, the excessive formation of hydrogen donors at high proton fluences and their diffusion during annealing at 350° decreases diode blocking capability.