1/f noise in large-area Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te photodiodes

The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg_1−xCd_xTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of 1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The 1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density in the mid-10⁻¹⁵A/Hz^1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth i_n(f = 1 Hz, V_d = −60 mV, and Δf = 1 Hz) to dark current I_d(V_d = −60 mV) was α_SW-d = i_n/I_d ∼ 1 × 10⁻³. The SWIR detectors measured at 0 mV under illuminated conditions had median α_SW-P = i_n/I_ph ∼ 7 × 10⁻⁶. For mid-wave infrared (MWIR) detectors, α_MW-d = i_n/I_d ∼ 2 × 10⁻⁴, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under illuminated conditions at 98 K and −60 mV bias resulted in α_MW-P = i_n/I_ph = 4.16 ± 1.69 × 10⁻⁶. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias, with a noise-current-to-photocurrent ratio, α_MW-P, in the mid 10⁻⁶ range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, α_LW-d = i_n/I_d ∼ 6 × 10⁻⁶, for the best performers. The majority of the LWIR detectors exhibited α_LW-d on the order of 2 × 10⁻⁵. The photo-induced 1/f noise had α_LW-P = i_n/I_ph ∼ 5 × 10⁻⁶. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular bias. The 1/f noise was not a direct function of the applied bias.     

InxGa1−xAs (x=0.25–0.35) grown at low temperature

In_xGa_1−xAs (x=0.25–0.35) grown at low temperature on GaAs by molecular beam epitaxy is characterized by Hall effect, transmission electron microscopy, and ultrafast optical testing. As with low temperature (LT) GaAs, the resistivity is generally higher after a brief anneal at 600°C. High-resolution transmission electron microscopy shows all the as-grown epilayers to be heavily dislocated due to the large lattice mismatch (2–3%). When the layers are annealed, in addition to the dislocations, precipitates are also generally observed. As with LT-GaAs, the lifetime shortens as growth temperature is reduced through the range 300–120°C; also, the lifetime in LT-In_xGa_1−xAs is generally shorter in as-grown samples relative to annealed samples. Metal-semiconductor-metal photodetectors fabricated on the material exhibit response times of 1–2 picoseconds, comparable to results reported on GaAs grown at low temperature, and the fastest ever reported in the wavelength range of 1.0–1.3 μm.     

As压对LT-GaAs/AlGaAs多量子阱光学特性的影响

在衬底温度为 3 5 0°C的条件下 ,用分子束外延的方法 ,在不同的砷压条件下生长了 Ga As/Al0 .3Ga0 .7As多量子阱结构。 77K的荧光实验证明 ,砷压对样品的光学特性影响显著。认为砷压对低温多量子阱光学特性的影响是点缺陷随砷压的演化和能级间相互补偿的共同结果。通过优化砷压 ,样品的荧光峰的半峰宽减小到 3 me V,这是到目前为止所报道过的最窄的低温多量子阱的荧光峰。相应的垂直场光折变器件的电吸收为 60 0 0 cm     

缓冲层对氮化镓二维生长的影响

报道了在射频等离子体（RF-Plasma)辅助的分子束外延（MBE）技术中，使用白宝石（0001）衬底，采用低温缓冲层工艺外延氮化镓（GaN)。通过原子力显微镜（AFM）的表面形貌比较及X射线双晶衍射（XRD）ω扫描摇摆曲线的分析，讨论了低温缓冲层成核机理及缓冲层生长温度与形成准二维生长的关系，确立了缓冲层的三维成核，准二维生长的生长机理，并在此基础上实现了氮化镓外延层更好地二维生长，进一步提高了氮化镓外延层的晶体质量。     

Defects in molecular beam epitaxial GaAs grown at low temperatures

We have utilized a variable energy positron beam and infrared transmission spectroscopy to study defects in GaAs epilayers grown at low temperatures (LT-GaAs) by molecular beam epitaxy. We have measured the Doppler broadening of the positron-electron annihilation gamma ray spectra as a function of positron implantation energy. From these measurements, we have obtained results for the depth profiles of Ga monovacancies in unannealed LT-GaAs and Ga monovacancies and arsenic cluster related defects in annealed LT-GaAs. We have also studied the effects of the Si impurities in annealed LT-GaAs. The infrared transmission measurements on unannealed LT-GaAs furnish a broad defect band, related to As antisites, centered at 0.370 eV below the conduction band.     

液晶光阀用ZnSSe薄膜的光电特性研究

用分子束外延法(MBE),在铟锡氧化物(ITO)导电玻璃衬底上生长了ZnSSe薄膜,详细研究了薄膜的光电特性.通过控制反应时的生长参数,制备出了符合紫外液晶光阀设计要求的光导层薄膜.室温下,该薄膜光谱响应截止边的响应度为0.01A/W,紫外/可见光响应对比度大于103.薄膜的暗电阻率随薄膜晶粒增大而减小,在衬底温度为2900C时,所获得的ZnSSe薄膜具有4.3×1011Ω@cm的暗电阻率.频率从40Hz到4000Hz的交流特性测试,也证实该薄膜符合器件紫外成像的工作要求.     

Elimination of dislocations in heteroepitaxial MBE and RTCVD Ge x Si1-x grown on patterned Si substrates

We have grown Ge _x Si_1-x (0 <x < 0.20,1000–3000Å thick) on small growth areas etched in the Si substrate. Layers were grown using both molecular beam epitaxy (MBE) at 550° C and rapid thermal chemical vapor deposition (RTCVD) at 900° C. Electron beam induced current images (EBIC) (as well as defect etches and transmission electron microscopy) show that 2800Å-thick, MBE Ge_0.19Si_0.81 on 70-μm-wide mesas have zerothreading and nearly zero misfit dislocations. The Ge_0.19Si{0.81} grown on unpatterned, large areas is heavily dislocated. It is also evident from the images that heterogeneous nucleation of misfit dislocations is dominant in this composition range. 1000Å-thick, RTCVD Ge_0.14Si_0.86 films deposited on 70 μm-wide mesas are also nearly dislocation-free as shown by EBIC, whereas unpatterned areas are more heavily dislocated. Thus, despite the high growth temperatures, only heterogeneous nucleation of misfit dislocations occurs and patterning is still effective. Photoluminescence spectra from arrays of GeSi on Si mesas show that even when the interface dislocation density on the mesas is high, growth on small areas results in a lower dislocation density than growth on large areas.     

单晶硅化物及其应用

本文评述了单晶CoSi_2和NiSi_2的结构特点、各种制备方法、器件应用和发展前景。采用分子束外延(MBE)和“内延”法(Mesotaxy)制备的单晶硅化物质量,电学性能和热稳定性较好。由于首次得到理想的突变的金属——半导体接触,使对金属——半导体接触的理论分析成为可能。硅/单晶硅化物/硅结构在实际应用中非常重要,如单晶硅化物作集电极埋层,能降低集电极串联电阻,克服重掺杂埋层的横扩和自掺杂问题,提高了电路工作速度,减小了器件面积。埋层硅化物也可作为微波传输线的地线,是实现高频集成电路互连的好方法。而采用该结构制备的高速器件——金属基区晶体管(MBT)和穿透基区晶体管(PBT),具有很好的应用前景。     

Cooperative and competitive concurrency in scientific computing. A full open-source upgrade of the program for dynamical calculations of RHEED intensity oscillations

A computational model is a computer program, which attempts to simulate an abstract model of a particular system. Computational models use enormous calculations and often require supercomputer speed. As personal computers are becoming more and more powerful, more laboratory experiments can be converted into computer models that can be interactively examined by scientists and students without the risk and cost of the actual experiments. The future of programming is concurrent programming. The threaded programming model provides application programmers with a useful abstraction of concurrent execution of multiple tasks. The objective of this release is to address the design of architecture for scientific application, which may execute as multiple threads execution, as well as implementations of the related shared data structures.

New version program summary

Program title: GrowthCPCatalogue identifier: ADVL_v4_0Program summary URL:http://cpc.cs.qub.ac.uk/summaries/ADVL_v4_0.htmlProgram obtainable from: CPC Program Library, Queen?s University, Belfast, N. IrelandLicensing provisions: Standard CPC licence, http://cpc.cs.qub.ac.uk/licence/licence.htmlNo. of lines in distributed program, including test data, etc.: 32 269No. of bytes in distributed program, including test data, etc.: 8 234 229Distribution format: tar.gzProgramming language: Free Object PascalComputer: multi-core x64-based PCOperating system: Windows XP, Vista, 7Has the code been vectorised or parallelized?: NoRAM: More than 1 GB. The program requires a 32-bit or 64-bit processor to run the generated code. Memory is addressed using 32-bit (on 32-bit processors) or 64-bit (on 64-bit processors with 64-bit addressing) pointers. The amount of addressed memory is limited only by the available amount of virtual memory.Supplementary material: The figures mentioned in the “Summary of revisions” section can be obtained here.Classification: 4.3, 7.2, 6.2, 8, 14External routines: Lazarus [1]Catalogue identifier of previous version: ADVL_v3_0Journal reference of previous version: Comput. Phys. Comm. 181 (2010) 709Does the new version supersede the previous version?: YesNature of problem: Reflection high-energy electron diffraction (RHEED) is an important in-situ analysis technique, which is capable of giving quantitative information about the growth process of thin layers and its control. It can be used to calibrate growth rate, analyze surface morphology, calibrate surface temperature, monitor the arrangement of the surface atoms, and provide information about growth kinetics. Such control allows the development of structures where the electrons can be confined in space, giving quantum wells or even quantum dots. In order to determine the atomic positions of atoms in the first few layers, the RHEED intensity must be measured as a function of the scattering angles and then compared with dynamic calculations. The objective of this release is to address the design of architecture for application that simulates the rocking curves RHEED intensities during hetero-epitaxial growth process of thin films.Solution method: The GrowthCP is a complex numerical model that uses multiple threads for simulation of epitaxial growth of thin layers. This model consists of two transactional parts. The first part is a mathematical model being based on the Runge–Kutta method with adaptive step-size control. The second part represents first-principles of the one-dimensional RHEED computational model. This model is based on solving a one-dimensional Schrödinger equation. Several problems can arise when applications contain a mixture of data access code, numerical code, and presentation code. Such applications are difficult to maintain, because interdependencies between all the components cause strong ripple effects whenever a change is made anywhere. Adding new data views often requires reimplementing a numerical code, which then requires maintenance in multiple places. In order to solve problems of this type, the computational and threading layers of the project have been implemented in the form of one design pattern as a part of Model-View-Controller architecture.Reasons for new version: Responding to the users? feedback the Growth09 project has been upgraded to a standard that allows the carrying out of sample computations of the RHEED intensities for a disordered surface for a wide range of single- and epitaxial hetero-structures. The design pattern on which the project is based has also been improved. It is shown that this model can be effectively used for multithreaded growth simulations of thin epitaxial layers and corresponding RHEED intensities for a wide range of single- and hetero-structures. Responding to the users? feedback the present release has been implemented using a well-documented free compiler [1] not requiring the special configuration and installation additional libraries.Summary of revisions:

• 1. 

  The logical structure of the Growth09 program has been modified according to the scheme showed in Fig. 1.1 The class diagram in Fig. 11 is a static view of the main platform-specific elements of the GrowthCP architecture. Fig. 21 provides a dynamic view by showing the creation and destruction simplistic sequence diagram for the process.

• 2. 

  The program requires the user to provide the appropriate parameters in the form of a knowledge base for the crystal structures under investigation. These parameters are loaded from the parameters.ini files at run-time. Instructions to prepare the .ini files can be found in the new distribution.

• 3. 

  The program enables carrying out different growth models and one-dimensional dynamical RHEED calculations for the fcc lattice with basis of three-atoms, fcc lattice with basis of two-atoms, fcc lattice with single atom basis, Zinc-Blende, Sodium Chloride, and Wurtzite crystalline structures and hetero-structures, but yet the Fourier component of the scattering potential in the TRHEEDCalculations.crystPotUgXXX() procedure can be modified and implemented according to users? specific application requirements. The Fourier component of the scattering potential of the whole crystalline hetero-structures can be determined as a sum of contributions coming from all thin slices of individual atomic layers. To carry out one-dimensional calculations of the scattering potentials, the program uses properly constructed self-consistent procedures.

• 4. 

  Each component of the system shown in Figs. 11 and 21 is fully extendable and can easily be adapted to new changeable requirements. Two essential logical elements of the system, i.e. TGrowthTransaction and TRHEEDCalculations classes, were designed and implemented in this way for them to pass the information to themselves without the need to use the data-exchange files given. In consequence each of them can be independently modified and/or extended. Implementing other types of differential equations and the different algorithm for solving them in the TGrowthTransaction class does not require another implementation of the TRHEEDCalculations class. Similarly, implementing other forms of scattering potential and different algorithm for RHEED calculation stays without the influence on the TGrowthTransaction class construction.

Unusual features: The program is distributed in the form of main project GrowthCP.lpr, with associated files, and should be compiled using Lazarus IDE. The program should be compiled with English/USA regional and language options.Running time: The typical running time is machine and user-parameters dependent.References:

• [1] 

  http://sourceforge.net/projects/lazarus/files/.

     

Substrate rotation effects on β-FeSi2 epitaxial film growth using MBE

This study showed that substrate rotation plays an important role in the growth of high-quality β-FeSi₂ epitaxial film on hydrogen terminated Si (1 1 1) substrate using molecular beam epitaxy (MBE). The present work elucidated the substrate rotation effects on morphology, thickness, and purity. Results verified that substrate rotation is essential to grow thicker epilayers with better morphology and compositional uniformity. In addition, purity analyses indicated that substrate rotation increases the concentration of non-metallic impurities (H, C, and O), but does not further introduce metallic impurities into β-FeSi₂ films.