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排序方式: 共有140条查询结果,搜索用时 31 毫秒
1.
The morphological evolution of hillocks at the unpassivated sidewalls of single-crystal metallic thin film interconnects is investigated via computer simulations using the free-moving boundary value problem. The effect of drift-diffusion anisotropy on the development of surface topographical scenarios is fully explored under the action of electromigration and capillary forces, utilizing numerous combinations of the surface texture, the drift-diffusion anisotropy and the direction of the applied electric field. The simulation studies yield analytical relationships for the velocity of the surface solitary waves and the drift velocity of electromigration-induced internal voids as a function of the applied current densities, which contain intrinsic and structural properties of the single-crystal thin films. The threshold value of the applied current density, above which electromigration-induced internal voids can be formed and may cause the catastrophic failure of interconnects by breaching, also appears explicitly in this relationship.  相似文献   
2.
磷酸异戊酯萃取U,Np,Pu性能的研究   总被引:1,自引:0,他引:1  
测定磷酸异戊酯(TiAP)对U(Ⅵ)、Np(Ⅳ)、Np(Ⅴ)、Np(Ⅵ)、Pu(Ⅳ)和Pu(Ⅲ)的萃取性能及对Th(代替Pu)的萃取容量。研究了二乙三胺五乙酸(DTPA)络合剂对上述核素形成配合物的条件。结果表明,在用TBP和TiAP作萃取剂时,可用DTPA络合Np(Ⅵ)、Pu(Ⅲ).从而改善乏燃料后处理中U产品对Np、Pu和Pu产品对Np的去污。  相似文献   
3.
237Np,238Pu,241Am和90Sr在中国和日本膨润土中迁移的野外试验   总被引:1,自引:0,他引:1  
从1997年6月25日到2000年7月11日在中国辐射防护研究院试验场,在天然降雨和人工喷淋(15mm/d)两种条件下,在包气带黄土中进行了237Np,238Pu,241Am和90Sr在中国膨润土和日本膨润土中迁移的野外试验。试块由膨润土和砂子以质量比为15∶85组成,试块大小为150mm×150mm。试验结果表明,在两种条件下,核素在两种膨润土试块中分布状态和变化趋势相似,238Pu和241Am在3a内没有明显移动,237Np和90Sr在天然降雨条件下,分布曲线有所展宽;在人工喷淋条件下经1106d后,237Np90Sr在试块内分别向下迁移15mm和20mm,呈现出扩散为主的迁移。  相似文献   
4.
Pu、Am、Np是3种重要的超铀核素,环境中的这些核素主要来源于人类的核活动,包括大气层核武器试验、核设施排放和核事故释放等。这些超铀核素不仅具有放射性,还兼具化学毒性。我国地域辽阔,环境土壤类型丰富,在当前核电事业蓬勃发展的背景下,建立和扩大我国环境土壤中这些重要超铀核素的“准本底”数据库是辐射环境安全评价的重要组成部分,也是公众关心的热点问题。近30多年来,研究人员对我国不同环境土壤中这几种超铀核素从不同科学角度开展了调查测量研究。本文对此进行整理和分析,对我国环境土壤中这些重要超铀核素(主要是Pu核素,还包括241Am和237Np)的来源、浓度水平和分布特征进行讨论和综述,为辐射环境安全评价奠定基础。  相似文献   
5.
Solving geometric and sample alignment issues is a major part of multi-axial Rutherford backscattering channeling (RBS-C) analysis of materials, especially involving complicated samples. However, a geometric standard does not exist for RBS-C, which complicates experimental procedures and makes experimental methods and data presentation inconsistent among different experiments. Our approach to solving RBS-C geometric issues, discussed here, is to introduce a geometric adjustment and sample manipulation procedure which defines the orientation and rotation of the sample with respect to a fixed coordinate system. This method makes rotational, alignment and sample manipulation operations involved in RBS-C more flexible and simpler. As a test case, we present multi-axial RBS-C maps of Si obtained via this methodology. Distortions arising in such RBS-C maps due to geometric effects, how they can affect alignment procedure and data extraction, and how our approach treats these issues are discussed.  相似文献   
6.
Advanced transmission electron microscopy techniques were carried out in order to investigate stress corrosion cracking in Alloy 600 U-bend samples exposed in simulated PWR primary water at 330 °C. Using high-resolution imaging and fine-probe chemical analysis methods, ultrafine size oxides present inside cracks and intergranular attacks were nanoscale characterized. Results revealed predominance of Cr2O3 oxide and Ni-rich metal zones at the majority of encountered crack tip areas and at leading edge of intergranular attacks. However, NiO-structure oxide was predominant far from crack tip zones and within cracks propagating along twin boundaries and inside grains. These observations permit to suggest a mechanism for intergranular stress corrosion cracking of Alloy 600 in PWR primary water. Indeed, the results suggest that stress corrosion cracking is depending on chromium oxide growth in the grain boundary. Oxide growth seems to be dependent on oxygen diffusion in porous oxide and chromium diffusion in strained alloy and in grain boundary beyond crack tip. Strain could promote transport kinetic and oxide formation by increasing defaults rate like dislocations.  相似文献   
7.
We report the preparation of ordered polyaniline nanorod arrays by a simple method without the use of any template. The synthesis method is by a chemical route, viz. dispersion polymerization of aniline in polyvinyl alcohol. The nanorods obtained have a diameter of 100-500 nm and a length of a few micrometers. Films containing the nanorod assembly have been characterized by SEM, XRD and FTIR spectroscopy. We have also measured I-V characteristics and the temperature dependence of the conductivity of the films. We discuss the formation mechanism of the self-assembled nanostructures, the morphology of the films, and the crystallinity and the transport mechanism.  相似文献   
8.
在聚变堆中嬗变~(237)Np的研究   总被引:2,自引:0,他引:2  
研究了在聚变堆中嬗变长寿命的锕系元素 ̄(237)Np,以及转换 ̄(237)Np成为可裂变燃料 ̄(239)pu的物理可行性。探讨了在嬗变包层中 ̄(237)Np的浓度、 ̄(239)pu的中于增殖率、中子壁负载的变化以及嬗变区厚度与 ̄(237)Np嬗变率的关系。给出的研究计算结果表明,在1个聚变功率为200MW,中子壁负载为1.0MW/m2的聚变堆包层中,实现年嬗变 ̄(237)Np约3.5t,年平均产钚量约20kg是可行的。  相似文献   
9.
Low-energy ion irradiation of polymer induces different phenomena in the near surface layer, which effect strongly the metal-polymer interface formation and promotes adhesion of polymers to metals. Low-energy argon and oxygen ion beams were used to alter the chemical and physical properties of different polymers (PS (polystyrene), PαMS (poly(α-methylstyrene), BPA-PC (bisphenol-A-polycarbonate) and PMMA (poly(methyl methacrylate)), in order to understand the adhesion phenomena between a deposited Cu layer and the polymers. The resulting changes were investigated by various techniques including X-ray photoelectron spectroscopy, measurements of the metal condensation coefficient and a new technique to measure cross-linking at the polymer surface. Two types of practical adhesion strengths of Cu-polymer systems, measured using 90° peel tests, were observed: (i) peel strength increased at low ion fluences, reached a maximum and then decreased after prolonged treatment and (ii) no improvement in the peel strength on treated polymer surfaces was recorded. The improvement in the metal-polymer adhesion in the ion fluence range of 1013-1015 cm−2 is attributed to the creation of a large density of new adsorption sites resulting in a larger contact area and incorporation of chemically active groups that lead to increased interaction between metal and polymer by metal-oxygen-polymer species formation. XPS analysis of peeled-off surfaces showed that in most cases the failure location changed from interfacial for untreated polymers to cohesive failure in the polymer for treated surfaces. These observations and measurements of the metal condensation coefficients suggest that bonding is improved at the metal-polymer interface for all metal-polymer systems. However, the decrease in the peel strength at high ion fluences is attributed to the formation of a weak boundary layer in polymers. The correlation between sputter rate of polymers and altering in the peel strength for moderate ion fluences was determined. It was observed that the metal-polymer adhesion could be improved for PS and BPA-PC, which have a low sputter rate and preferentially formed cross-links in the treated surface. For degrading polymers, like PαMS and PMMA, chain scission rather than cross-linking dominates, low molecular weight species are formed and no adhesion enhancement is observed.  相似文献   
10.
In this work, we propose a novel method for obtaining high-density Ge-dots/Si multilayered heterostructures. The high-density self-assembled Ge dots are firstly grown on a-Si layer using low-pressure chemical vapor deposition (LPCVD), and then low-temperature recrystallized by Ni based metal induced lateral crystallization (MILC). According to optical micrograph, microprobe Raman spectroscopy and transmission electron microscopy (TEM) observations, it has been found that the Ni induced lateral crystallized Si film has large leaf-like grains elongated along the MILC direction with (110) preference. The strain shift of Ge dots reveals the formation of high quality interface between the crystallized Si and Ge dot.  相似文献   
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