Micro-RBS characterisation of the chemical composition and particulate deposition on pulsed laser deposited Si1−xGex thin films

The formation and deposition of particulates by pulsed laser deposition of Si_1−xGe_x semiconductor alloy thin films are discussed. Using Rutherford backscattering spectrometry with micrometer lateral resolution (micro-RBS) the film composition was measured with high accuracy, even in the presence of particulates with a high areal density of 20,000–30,000 particulates per mm². We show that on impact of a particulate, the part of the thin film which is already deposited probably melts and its Ge content segregates to the surface.     

Development of enhanced depth-resolution technique for shallow dopant profiles

A rapid shrinkage in the minimum feature size of integrated circuits requires analysis of dopants in their shallow source–drain and their extensions with an enhanced depth resolution. Rutherford backscattering spectroscopy (RBS) combining a medium-energy He ion beam with a detector of improved energy resolution should meet the requirement of a depth resolution better than 5 nm at a depth of 10–20 nm in the next 10 years. A toroidal electrostatic analyzer of 4×10⁻³ energy resolution has been used to detect the scattered ions of a medium-energy He ion beam. Five keV As⁺ implanted Si or SiO₂ samples were measured. Depth profiling results using the above technique are compared with those of glancing-angle RBS by MeV energy He ions. Limitations in the energy resolution due to various energy-spread contributions have been clarified.     

考虑塑性铰外移的钢框架梁柱连接设计

介绍美国联邦突发事件管理局 (FEMA)对 1 994年北岭地震中焊接钢框架节点破坏原因的正式解释 ,说明塑性铰外移的必要性。此外 ,还介绍了塑性铰外移的两种基本形式以及狗骨式 (RBS)连接的有关设计规定和适用条件 ,其设计方法可供我国工程设计人员参考。     

The influence of an intermediate MoO3 layer on the solid state reaction of cobalt oxide withγ-Al2O3

In view of the importance for Co_xO_y,-MoO₃/-Al₂O₃ hydrodesulphurization (HDS) catalysts, the reactivity of cobalt oxide layers towards cobalt aluminate formation was investigated on both MoO₃-covered and bare -Al₂O₃ substrates. Co₃O₄/MoO₃/-Al₂O₃ and Co₃O₄/-Al₂O₃ systems were prepared by vapour-deposition of MoO₃ (12 × 10¹⁵ Mo atoms/cm²) and Co (400 × 10¹⁵ Co atoms/cm²) layers onto a -Al₂O₃ substrate, followed by oxidation of the Co layer to Co₃O₄. After annealing at 800°C for 40 h, the interfacial reaction to cobalt aluminate was assessed using Rutherford backscattering spectrometry. The presence of molybdenum oxide appeared to enhance cobalt aluminate formation. The Mo atoms, which spread out over the entire cobalt-containing layer, presumably caused a high defect density, which explains the observed higher reaction rate. The amount of MoO₃ was much too low to stabilize all cobalt atoms by cobalt molybdate formation.     

Pore Propagation Directions in P+ Porous Silicon

A comparative study is presented on the pore propagation directions of porous silicon layers (PSL) formed on p⁺-type substrates of different orientations. PSLs were formed on plain (0 0 1) and (1 1 1) silicon wafers as well as on structured (0 0 1) wafers containing facets of various orientations. During anodization, regular pores follow the 0 0 1 direction on the (0 0 1) planes. While on the (1 1 1) planes fewer regular pores develop and seemingly propagate closely to the 1 1 1 direction. These results indicate that the pores propagate perpendicular to the surface i.e. along the field lines when the surface orientation is either (0 0 1) or (1 1 1).When the silicon surface provided (1 1 0) orientation (Chuang, Collins, and Smith, 1989), or its position is in between the (0 0 1) and (1 1 1) planes then the pores do not propagate perpendicular to the surface but along the 0 0 1 direction.All the phenomena exhibited might be explained by presuming that during formation, the pores propagate along the 1 0 0 directions, and that those 1 0 0 directions are preferred which are closely to the field lines. In PSLs formed on (0 0 1) surfaces the field lines and the 0 0 1 crystallographic direction are coincident. However, in the (1 1 1) oriented wafer where three equally probable 1 0 0 directions exist around the field lines, more irregular structure of PSLs will develop.     

悬臂梁段不同拼接方式下延性节点静力性能分析

为了解决装配式钢结构的抗震问题,提出3种适用于模块化装配式钢框架的带Z字形悬臂梁段拼接的梁柱节点,通过拼接区的滑移或者削弱梁段的塑性变形实现节点良好的延性性能.为减少强震作用对梁柱连接焊缝的破坏,对3种不同的节点提出了各自的抗震设计要求.在对3组试件进行足尺静力试验的基础上,对节点进行了单调加载有限元分析.获得了节点的弯矩-转角曲线以及节点的破坏模式,并和试验结果进行了对比,得到了接触面摩擦力和螺栓拉力的变化规律.通过推导的简化计算公式对节点的初始转动刚度、滑移荷载和屈服荷载进行了计算.结果表明:节点静力加载的破坏模式为靠近拼接区域的悬臂梁下翼缘或者削弱梁段单独或者同时发生较大的局部屈曲变形,节点在破坏前经历了充分的塑性变形,属于延性破坏,3种试件都有良好的延性性能和塑性转动能力.节点简化计算公式得到的结果和试验结果吻合良好.     

RBF neural networks for solving the inverse problem of backscattering spectra

This paper investigates a new method to solve the inverse problem of Rutherford backscattering (RBS) data. The inverse problem is to determine the sample structure information from measured spectra, which can be defined as a function approximation problem. We propose using radial basis function (RBF) neural networks to approximate an inverse function. Each RBS spectrum, which may contain up to 128 data points, is compressed by the principal component analysis, so that the dimensionality of input data and complexity of the network are reduced significantly. Our theoretical consideration is tested by numerical experiments with the example of the SiGe thin film sample and corresponding backscattering spectra. A comparison of the RBF method with multilayer perceptrons reveals that the former has better performance in extracting structural information from spectra. Furthermore, the proposed method can handle redundancies properly, which are caused by the constraint of output variables. This study is the first method based on RBF to deal with the inverse RBS data analysis problem.     

The effect of steam treatment on MeO/Al2O3 model catalysts (Me = Ni,Co, Cu,Fe)

To study the influence of steam on the solid state reaction between MeO (Me = Ni, Co, Cu or Fe) and Al₂O3, MeO/-Al₂O₃ and MeO/-Al₂O₃ model catalysts were kept in either N₂/20% O₂ or N₂/O₂/30% H₂O at 500–1000°C. The samples were subsequently analyzed with RBS and FTIR. Surprisingly, nickel, cobalt and copper volatilized when MeO/-Al₂O₃ or MeAl₂U₄/-Al₂O₃ samples were annealed in the presence of 0.3 atm steam at 1000°C. Especially copper was found to volatilize very rapidly in the presence of steam, even at a temperature as low as 800°C. FTIR spectra of steam-treated NiO/-Al₂O₃ samples showed the incorporation of hydroxyl groups in the nickel oxide layer. This observation and an excellent agreement with thermochemical calculations support our conclusion that the volatile species are metal hydroxides. The solid state reaction of MeO with-Al₂O₃ was found to proceed at a much higher rate in the presence of 0.3 atm steam at 500–800°C, presumably as a result of an enhanced surface mobility of Me and Al ions along the grain boundaries and the surfaces of the internal pores of the-Al₂O₃ support, when steam is present.     

SiGe／Si和SGOI材料的Li离子束RBS分析

SiGe合金薄膜中的Ge含量度分布对材料的禁带宽度和制作器件的性能有十分重要的影响。本文用Li离子束卢瑟福背散射分析法对SiGe／Si和SiGe-OI材料样品进行了分析。与TEM，SEM、Raman等分析结果进行比较表明，Li离子束RBS分析可同时测量SiGe层厚度，Ge含量度其深度分布，Si过渡层和SiO2层厚度，并有较好的测量精度。     

Ni(Pt)Si硅化物温度稳定性的研究

对比研究了夹层结构N i/P t/N i分别与掺杂p型多晶硅和n型单晶硅进行快速热退火形成的硅化物薄膜的电学特性。实验结果表明,在600~800°C范围内,掺P t的N iS i薄膜电阻率低且均匀,比具有低电阻率的镍硅化物的温度范围扩大了100~150°C。依据吉布斯自由能理论,对在N i(P t)S i薄膜中掺有2%和4%的P t样品进行了分析。结果表明,掺少量的P t可以推迟N iS i向N iS i2的转化温度,提高了镍硅化物的热稳定性。最后,制作了I-V特性良好的N i(P t)S i/S i肖特基势垒二极管,更进一步证明了掺少量的P t改善了N iS i肖特基二极管的稳定性。