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1.
The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated
by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors
were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and
Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively.
Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor
interfaces were the most stable. 相似文献
2.
A. Edwards Mulpuri V. Rao B. Molnar A. E. Wickenden W. Holland P. H. Chi 《Journal of Electronic Materials》1997,26(3):334-339
Doping by ion implantation using Si, O, Mg, and Ca has been studied in single crystal semi-insulating and n-type GaN grown
on a-sapphire substrates. The n-and p-type dopants used in this study are Si and O; Mg and Ca, respectively. Room temperature
activation of Si and O donors has been achieved after 1150°C annealing for 120 s. The activation of Mg and Ca acceptors is
too low to measure at both room temperature and 300°C. Using higher doses to achieve a measurable p-type conduction increases
the amount of damage created by the implantation. Rutherford back scattering measurements on this material indicate that the
damage is still present even after the maximum possible heat treatment. Secondary ion mass spectrometry measurements have
indicated a redistribution in the measured profiles of Mg due to annealing. 相似文献
3.
The coal filter cake is a product of fine coal after floatation which has an ash content of 7-13%, water content of 30±2%, and a particle size of less than 1 mm. The ash content was measured by the intensity of the single backscattered gamma-ray, and its accuracy is mainly dependent on the energy of the gamma-ray. The 238Pu low energy photon source is selected in this work. The energy of its gamma-ray is 15 keV, which can result not only in the best sensitivity, but also in the lowest contribution to the environment radiation. The root mean square deviation of the ash measurement is±0.33% (±1σ). 相似文献
4.
秀卢瑟福背散射-沟道技术(RBS-C)和X射线衍射技术(XRD)研究了Pt和注入YSZ(Y2O3稳定的ZrO2)后产生的损伤和退火过程中损伤的恢复及注入Pt的晶化,RBS-C分析表明YSZ室温下的存在较强自退火效应,XRD分析结果示出硫以铂的晶化产生很大影响。 相似文献
5.
6.
In view of the importance for CoxOy,-MoO3/-Al2O3 hydrodesulphurization (HDS) catalysts, the reactivity of cobalt oxide layers towards cobalt aluminate formation was investigated on both MoO3-covered and bare -Al2O3 substrates. Co3O4/MoO3/-Al2O3 and Co3O4/-Al2O3 systems were prepared by vapour-deposition of MoO3 (12 × 1015 Mo atoms/cm2) and Co (400 × 1015 Co atoms/cm2) layers onto a -Al2O3 substrate, followed by oxidation of the Co layer to Co3O4. After annealing at 800°C for 40 h, the interfacial reaction to cobalt aluminate was assessed using Rutherford backscattering spectrometry. The presence of molybdenum oxide appeared to enhance cobalt aluminate formation. The Mo atoms, which spread out over the entire cobalt-containing layer, presumably caused a high defect density, which explains the observed higher reaction rate. The amount of MoO3 was much too low to stabilize all cobalt atoms by cobalt molybdate formation. 相似文献
7.
用400 keV能量的铒离子垂直注入晶体硅(Si)样品中。利用卢瑟福背散射技术研究了能量为400 keV、剂量为5×1015ions/cm2的铒离子注入Si晶体的平均投影射程、射程离散和深度分布。测出的实验值和TRIM 98得到的理论模拟值进行了比较,发现实验值跟TRIM 98模拟计算的理论值符合较好。 相似文献
8.
T. Nagira X. C. Liu K. Ushioda H. Fujii 《Science & Technology of Welding & Joining》2020,25(3):198-207
ABSTRACTThe microstructural evolutions of pure Ag and Ag-0.75 wt-%Sn during rapid cooling friction stir welding (FSW) were examined. At the lower welding temperature of FSW conditions, the annealing twinning was highly suppressed and the microstructural evolution was dominated by the discontinuous dynamic recrystallisation (DDRX) via the high angle boundary (HAB) bulging. The fully recrystallised microstructure was remarkably finer than that formed through the frequent annealing twinning at the higher welding temperature. Moreover, the Sn-addition caused the HAB bulging due to the inhibition of dynamic recovery and decreased mobility of grain boundaries. With decreasing the ratio of the peak temperature to the recrystallisation temperature, the dominant grain refinement mechanism is implied to change from the annealing twinning to the DDRX. 相似文献
9.
To study the influence of steam on the solid state reaction between MeO (Me = Ni, Co, Cu or Fe) and Al2O3, MeO/-Al2O3 and MeO/-Al2O3 model catalysts were kept in either N2/20% O2 or N2/O2/30% H2O at 500–1000°C. The samples were subsequently analyzed with RBS and FTIR. Surprisingly, nickel, cobalt and copper volatilized when MeO/-Al2O3 or MeAl2U4/-Al2O3 samples were annealed in the presence of 0.3 atm steam at 1000°C. Especially copper was found to volatilize very rapidly in the presence of steam, even at a temperature as low as 800°C. FTIR spectra of steam-treated NiO/-Al2O3 samples showed the incorporation of hydroxyl groups in the nickel oxide layer. This observation and an excellent agreement with thermochemical calculations support our conclusion that the volatile species are metal hydroxides. The solid state reaction of MeO with-Al2O3 was found to proceed at a much higher rate in the presence of 0.3 atm steam at 500–800°C, presumably as a result of an enhanced surface mobility of Me and Al ions along the grain boundaries and the surfaces of the internal pores of the-Al2O3 support, when steam is present. 相似文献
10.