High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.     

Formation of ST12 phase Ge nanoparticles in ZnO thin films

In this work, we focus on the Ge nanoparticles (Ge-np) embedded ZnO multilayered thin films. Effects of reactive and nonreactive growth of ZnO layers on the rapid thermal annealing (RTA) induced formation of Ge-np have been specifically investigated. The samples were deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively on Si substrates. As-prepared thin film samples have been exposed to an ex-situ RTA at 600 °C for 60 s under forming gas atmosphere. Structural characterizations have been performed by X-ray Diffraction (XRD), Raman scattering, Secondary Ion Mass Spectroscopy (SIMS), and Scanning Electron Microscopy (SEM) techniques. It has been realized that reactive or nonreactive growth of ZnO layers significantly influences the morphology of the ZnO: Ge samples, most prominently the crystal structure of Ge-np. XRD and Raman analysis have revealed that while reactive growth results in a mixture of diamond cubic (DC) and simple tetragonal (ST12) Ge-np, nonreactive growth leads to the formation of only DC Ge-np upon RTA process. Formation of ST12 Ge-np has been discussed based on structural differences due to reactive and nonreactive growth of ZnO embedding layer.     

利用HFC网络开展VoIP业务

本文首先介绍了VoIP的原理、相关协议．然后介绍了VoIP业务在HFC网络应用的业务环境和体系结构。并对其中的功能实体进行描述和说明。最后介绍一个具体的业务实例。     

Improving Short-Circuit Current Capacity, Resistance, and Breaking Load of OPGW Constructions by Modifying Aluminium Alloy With AlB2

This article presents a method that can be applied to molten AA-6101 alloy to improve electrical properties of the aluminium part of the optical ground wire (OPGW) used in overhead transmission lines to protect phase conductors from lightning strike and to transmit signals and data. AA-6101 alloy in casting of the log as 6 m length and 178 mm diameter for extrusion has been inoculated by AlB₂ to decrease detrimental effects of Cr, Ti, V, and Zr on the conductivity of the material. After inoculation, improved billets were extruded as 9.5 mm diameter feedstock. Required wires drawn from the feedstock according to the construction types of OPGW to be tested were exposed to aging at 175°C, 6 h (T-8). Upon completion of the back-twist and performing-type stranding process, resistance, and short-circuit current capacity and breaking load of the OPGW 88/44 constructions with other metal combinations have been examined and tested to show improvement. Results are summarized in tables and graphically.     

光电设备电子机柜布线工艺研究

作为信号和电能载体的导线，同时也是噪声的载体和外来噪声侵入设备的媒体。描述了噪声通过导线侵入设备内部的方式，通过降低噪声的途径确定了机柜布线的原则，介绍了布线的要求和方法，最后提出了用布线槽布线的建议。     

基于FPGA的CAVLC编解码器设计与实现

H．264标准在基本档次和扩展档次中采用CAVLC熵编码，完成对变换系数残差块的编码。提出一种基于FPGA的H．264标准的CAVLC编解码器，程序代码用verilog硬件描述语言编写，并在QuartusⅡ中进行了仿真验证，可以实现对每个残差块数据的编解码并将其按照宏块光栅扫描的顺序输出到存储器，因此适合于嵌入在最终的码流中。仿真结果表明此CAVLC编解码器达到H．264标准中基本档次和扩展档次level3．0的性能要求。     

三网互联的几个关键技术

对三网互联的几个关键技术进行分析与研究，介绍利用IP技术解决有线电视网地址选择问题，探讨怎样将ATM技术与IP技术相互融合，使真正的信息高速公路成为现实，阐述利用H．323标准全面解决视频网络方案。     

H.264变换编码与量化原理分析

详细分析了 H .2 64视频编码标准中的整数变换和量化过程。 H .2 64采用 4× 4整数变换 ,并将尺度调整融合在量化过程中 ,降低变换算法复杂度和减少乘法次数 ,相对于以前的编码标准更加有效     

The new intra-urban dynamics: Suburbanisation and functional specialisation in French cities

This article examines the relationships between the employment suburbanisation from central cities towards their suburbs, and the process of intra-urban specialisation that occurred simultaneously in the fifty largest French metropolitan areas. A methodology is proposed to identify urban subcentres and to analyse the effects of the intra-urban specialisations on suburbanisation patterns. We conclude that the specialisation of both subcentres and central cities has a significant effect on suburbanisation rates. Lastly, an intra-metropolitan shift/share analysis provides additional insights into the employment dynamics of central cities and suburbs during the last twenty years. Received: 25 July 2000 / Accepted: 29 May 2001     

BaFe12O19/SiO2-B2O3微晶玻璃陶瓷的制备和微波性能

采用柠檬酸sol-gel工艺合成了BaFe12O19/SiO2-B2O3微晶玻璃陶瓷，研究了SiO2-B2O3玻璃的含量，Ba/Fe原子比和热处理温度对体系析出晶相的影响，以及介电常数和磁异率在1MHz-6GHz频率范围的变化规律，结果表明，休系中SiO2-B2O3玻璃的含量和Ba/Fe比越高，BaF312O19相的析出越困难，前驱体合适的热处理温度为1000℃，介电常数和磁导率基本上随测试频率的增而加下降；介电损耗的最大值为0．43，磁损耗较小。