A small‐area and low‐power data driver IC using two‐stage DAC with a capacitor array for active matrix flat‐panel displays

A small‐area and low‐power data driver integrated circuit (IC) using a two‐stage digital‐to‐analog converter (DAC) with a capacitor array is proposed for active matrix flat‐panel displays. The proposed data driver IC employs a capacitor array in the two‐stage DAC so as to reduce the DAC area and eliminate the need for a resistor string, which has high‐power consumption. To verify the proposed two‐stage DAC, a 20‐channel data driver IC with the proposed 10‐bit two‐stage DAC was fabricated using a 0.18‐μm complementary metal–oxide–semiconductor process with 1.8 and 6 V complementary metal–oxide–semiconductor devices. The proposed 10‐bit two‐stage DAC occupies only 43.8% of the area of a conventional 10‐bit two‐stage DAC. The measurement results show that the differential nonlinearity and integral nonlinearity are +0.58/?0.52 least significant bit and +0.62/?0.59 least significant bit, respectively. The measured interchannel deviation of the voltage outputs is 8.8 mV, and the measured power consumption of the 20‐channel data driver IC is reduced to 7.1 mW, which is less than half of the power consumed by the conventional one.     

Statistical Design of the Four-MOSFET Structure

The statistical design of the four-MOSFET structure is presented in this paper. The quantitative measure of the effect of mismatch between the four transistors on nonlinearity and offset current is provided through contours. Statistical optimization of the transistor and values is demonstrated. The four-MOSFET structure was fabricated through the MOSIS 2 m process using MOS transistor Level-3 model parameters. Experimental results are included in the paper.     

基于常规CMOS工艺的电子镇流器芯片设计

分析当前主流电子镇流器控制芯片的优缺点,提出了一种适用于功率在20W以下节能灯控制芯片的设计方案.采用常规的CMOS铝栅工艺.整个控制芯片由主芯片和高压管驱动两块芯片组成,两管间通过自举电容耦合.自举电容起的作用:(1)隔离高压(2)传输高压功率管的控制信号.此设计方案的难点是设计出符合上述设计要求的高压管驱动芯片.此款芯片采用6μm CMOS铝栅工艺模型,经仿真验证,现已通过MPW流片成功.测试各项指标都达到设计要求.     

Thermal characteristic of Cu-Cu bonding layer in 3-D integrated circuits stack

Copper (Cu) thermo-compression bonding of wafers can be used to fabricate multi-layer three-dimensional (3-D) integrated circuits (ICs). This work examines the thermal characteristic of the Cu bonding layer and demonstrates experimentally that Cu bonding layer can act as a spreading layer that helps in heat dissipation of bonded 3-D ICs stack more efficiently compared to silicon dioxide bonding layer. The use of Cu bonding layer in a double-layer stack of ICs provides better cooling by as much as 9 °C compared to oxide bonding interface.     

Multi-layer floorplanning for stacked ICs: Configuration number and fixed-outline constraints

3-D (stacked device layers) ICs can significantly alleviate the interconnect problem coming with the decreasing feature size and is promising for heterogeneous integration. In this paper, we concentrate on the configuration number and fixed-outline constraints in the floorplanning for 3-D ICs. Extended sequence pair, named partitioned sequence pair (in short, P-SP), is used to represent 3-D IC floorplans. We prove that the number of configuration of 3-D IC floorplans represented by P-SP is less than that of planar floorplans represented by sequence pair (SP) and decreases as the device layer number increases. Moreover, we applied the technique of block position enumeration, which have been successfully used in planar fixed-outline floorplanning, to fixed-outline multi-layer floorplanning. The experimental results demonstrate the efficiency and effectiveness of the proposed method.     

Study of hybrid orientation structure wafer

Two types of 5μm thick hybrid orientation structure wafers,which were integrated by（110）or（100） orientation silicon wafers as the substrate,have been investigated for 15-40 V voltage ICs and MEMS sensor applications.They have been obtained mainly by SOI wafer bonding and a non-selective epitaxy technique,and have been presented in China for the first time.The thickness of BOX SiO₂ buried in wafer is 220 nm.It has been found that the quality of hybrid orientation structure with（100）wafer substrate is better than that with（110）wafer substrate by"Sirtl defect etching of HOSW".     

一种新型低噪声电流控制逻辑的分析与设计

本文绘出了一种新型电流控制逻辑的电路结构和工作原理，并由此提出了该逻辑的优化设计方法。通过采用恒定工作电流和限制电路的输出逻辑摆幅，电流控制逻辑能避免静态CMOS电路工作时引入的瞬态开关噪声电流。理论分析和电路模拟结果都表明，和静态CMOS电路相比，电流控制逻辑的峰值开关电流下降了近两个数量级．该逻辑可应用在高性能的模／数混合集成电路中。     

CMOS／SOI电路模拟与参数提取

ＳＯＩ－ＭＯＳＦＥＴ主要模型参数得一致的提取，因而该模型嵌入ＳＰＩＣＥ后能保证ＣＭＯＳ／ＳＯＩ电路的正确模拟工作，从ＣＭＯＳ／ＳＯＩ器件和环振电路的模拟结果和实验结果看，两者符合得较好，说明我们所采用的ＳＯＩ ＭＯＳＦＥＴ器件模型及其参数提取都是成功的。     

PDP驱动芯片中高压LDMOS建模

建立了PDP驱动芯片用高压LDMOS的SPICE子电路模型,该模型集成了LDMOS固有特性：准饱和特性、电压控漂移区电阻、自热效应、密勒电容等. 与其他物理模型和子电路模型比较,该模型不但能提供准确的模拟结果,而且建模简单快捷,另外该模型可较容易地嵌入SPICE模拟软件中. 模型的实际应用结果显示：模拟与实测结果误差在5%以内.     

Voronoi图算法及其在混合电路的衬底耦合研究中的应用

提出了对版图进行划分的Ｖｏｒｏｎｏｉ图的算法：将Ｖｏｒｏｎｏｉ图进行变换,通过扫描技术,从下到上对每个点与交点进行处理,从而形成变换后的Ｖｏｒｏｎｏｉ图,最后将此图转换为Ｖｏｒｏｎｏｉ图．在计算中,针对集成电路的物理特性,改进了阱区附近的Ｖ图的生成以及多个水平位置点和兼并问题．算法时间复杂度为Ｏ（ｎｌｏｇｎ）,空间复杂度为Ｏ（ｎ）．