掺Er Al2O3光波导薄膜材料的制备及光学特性

介绍了掺ErAl2O3光波导薄膜的四种典型制备方法的研究结果。比较铒的发光环境和发光特性,分析了影响光致发光强度和寿命的条件和因素。不同工艺制得的Er∶Al2O3薄膜,膜内成分、膜的晶相、掺杂浓度等对Er3 的发光特性均有影响。退火对发光特性及材料具有改善作用。     

Deep levels,electrical and optical characteristics in SnTe-Doped GaSb Schottky Diodes

The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed and its concentration was affected by the Sb₄/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb grown at 550°C under a Sb₄/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized impurity concentration increases proportionally with the sample’s donor concentration, suggesting that the ionized impurity was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb layers were studied by comparing their photoluminescence spectra at 4.5K.     

Spectral Feature Analysis of Semiconductor Thin Disk Laser

The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of the semiconductor disk laser, and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperatures. We can see that: with increasing pump power, the thermal effect of the gain material becomes seriously and causes the saturation of carrier lifetime, so the electron-hole pair created in the absorbtion lay...     

多孔硅发光机制的分析

从量子力学的基本理论出发讨论了量子限制效应，推导出多孔硅有效禁带宽度增量并用量子限制效应和表面态及其物质在发光中作用的理论解释了ＰＳ光致发光的实验现象。     

Aggregate States and Energetic Disorder in Highly Ordered Nanostructures of para‐Sexiphenyl Grown by Hot Wall Epitaxy

We report on photoluminescence (PL) and thermally stimulated luminescence (TSL) in highly ordered nanostructures of para‐sexiphenyl (PSP) grown by hot wall epitaxy (HWE). A low‐energy broad band is observed in the PL spectra that can be attributed to the emission from molecular aggregates. While the intrinsic exciton emission in steady‐state PL dominates at low temperatures, the emission from aggregates increases with elevating temperature and its magnitude depends sensitively on film preparation conditions. Time‐resolved PL measurements showed that the aggregate emission decays with a life‐time of ≈ 4 ns, which is approximately an order of magnitude larger than the lifetime of singlet excitons. TSL data suggests the presence of an energetically disordered distribution of localized states for charge carriers in PSP films, which results from an intrinsic disorder in this material. A low‐temperature TSL peak with the maximum at around 30 K evidences for a weak energy disorder in PSP films, and has been interpreted in terms of a hopping model of TSL in disordered organic materials.     

知识库系统中的一种并发控制方法

本文给出了一个基于ＤＡＴＡＬＯＧ环境的知识库并发控制算法，算法的基础是两段锁（ＴＷＯＰＨＡＳＥＬＯＣＫＩＮＧ），它使用了相关和覆盖的概念，减少了被锁对象的数目，从而提高了系统的效率．最后给出了算法的正确性证明．     

Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O

Oxygen doped GaN has been grown by metalorganic chemical vapor deposition using N₂O as oxygen dopant source. The layers were deposited on 2″ sapphire substrates from trimethylgallium and especially dried ammonia using nitrogen (N₂) as carrier gas. Prior to the growth of the films, an AIN nucleation layer with a thickness of about 300? was grown using trimethylaluminum. The films were deposited at 1085°C at a growth rate of 1.0 μm/h and showed a specular, mirrorlike surface. Not intentionally doped layers have high resistivity (>20 kW/square). The gas phase concentration of the N₂O was varied between 25 and 400 ppm with respect to the total gas volume. The doped layers were n-type with carrier concentrations in the range of 4×10¹⁶ cm⁻³ to 4×10¹⁸ cm⁻³ as measured by Hall effect. The observed carrier concentration increased with increasing N₂O concentration. Low temperature photoluminescence experiments performed on the doped layers revealed besides free A and B exciton emission an exciton bound to a shallow donor. With increasing N₂O concentration in the gas phase, the intensity of the donor bound exciton increased relative to that of the free excitons. These observations indicate that oxygen behaves as a shallow donor in GaN. This interpretation is supported by covalent radius and electronegativity arguments.     

Solubilization of unilamellar liposomes by betaine-type zwitterionic/anionic surfactant systems

The mechanisms governing the solubilizing interactions between zwitterionic/anionic mixed surfactant systems at different molar fractions of the zwitterionic surfactant (X_zwitter) and neutral or electrically charged unilamellar liposomes were investigated. The mixed systems were formed by N-dodecyl-N,N-dimethylbetaine and sodium dodecyl sulfate in the presence of piperazine-1,4-bis-(2-ethanesulfonic acid) buffer at pH 7.20. Unilamellar liposomes formed by egg phosphatidylcholine, in some cases together with stearylamine or phosphatidic acid, were used. Solubilization was detected as a decrease in static light-scattering of liposomes. Two parameters were regarded as corresponding to the effective surfactant/lipid molar ratios (Re) at which the surfactant system (i) saturated the liposomes, Re_sat, and (ii) led to a total solubilization of liposomes, Re_sol. From these parameters the bilayer/aqueous medium surfactant partition coefficients for the saturation (K_sat) and complete bilayer solubilization (K_sol) were determined. When X_zwitter was 0.40, The Re and K parameters showed a maximum, whereas the critical micellar concentration (CMC) of these systems exhibited a minimum, regardless of the electrical charge of bilayers. Given that the ability of the surfactant systems to saturate or solubilize liposomes is inversely related to the Re_sat and Re_sol parameters, these capacities appear to be directly correlated with the CMC of the mixed systems. The similarity of both K_sat and K_sol (particularly for X_zwitter=0.2–0.8) suggests that a similar partition equilibrium governs both the saturation and the complete solubilization of bilayers, the free surfactant concentration (S_a,S_b), remaining almost constant with similar values to the CMC for each mixed system studied.     

UniMAT PLC在塑料挤出机控制系统中的应用

针对塑料挤出机控制系统成本高、速度低、精度低的问题,提出采用UniMATPLC控制方式,实践证明效果良好。     

单晶AlN纳米线的合成和光致发光特性研究

在无催化剂和模板条件。利用直流电孤放电等离子方法直接氮化金属铝合成纤锌矿结构的单晶AIN纳米线．分别用X光射线衍射（XRD）和场发射扫描电镜（FESEM）对AIN纳米线的结构和形貌进行表征,并测量了AIN纳米线的光致发光谱（PL）．结果表明,A1N纳米线的长度超过100μm,直径大约200nm,具有较高的长径比;在AIN纳米线的PL谱中,中心在506nm的发射带源于氮空位相关的深能级缺陷．