全文获取类型
收费全文 | 36346篇 |
免费 | 4342篇 |
国内免费 | 2098篇 |
专业分类
电工技术 | 16576篇 |
技术理论 | 1篇 |
综合类 | 3295篇 |
化学工业 | 939篇 |
金属工艺 | 671篇 |
机械仪表 | 1246篇 |
建筑科学 | 8048篇 |
矿业工程 | 643篇 |
能源动力 | 935篇 |
轻工业 | 230篇 |
水利工程 | 668篇 |
石油天然气 | 257篇 |
武器工业 | 129篇 |
无线电 | 4520篇 |
一般工业技术 | 1987篇 |
冶金工业 | 629篇 |
原子能技术 | 258篇 |
自动化技术 | 1754篇 |
出版年
2024年 | 166篇 |
2023年 | 445篇 |
2022年 | 767篇 |
2021年 | 1002篇 |
2020年 | 1095篇 |
2019年 | 836篇 |
2018年 | 853篇 |
2017年 | 1258篇 |
2016年 | 1360篇 |
2015年 | 1653篇 |
2014年 | 3076篇 |
2013年 | 2137篇 |
2012年 | 3223篇 |
2011年 | 3371篇 |
2010年 | 2576篇 |
2009年 | 2796篇 |
2008年 | 2537篇 |
2007年 | 2873篇 |
2006年 | 2407篇 |
2005年 | 1742篇 |
2004年 | 1325篇 |
2003年 | 1130篇 |
2002年 | 888篇 |
2001年 | 781篇 |
2000年 | 622篇 |
1999年 | 429篇 |
1998年 | 283篇 |
1997年 | 227篇 |
1996年 | 205篇 |
1995年 | 167篇 |
1994年 | 132篇 |
1993年 | 119篇 |
1992年 | 81篇 |
1991年 | 51篇 |
1990年 | 45篇 |
1989年 | 28篇 |
1988年 | 27篇 |
1987年 | 21篇 |
1986年 | 8篇 |
1985年 | 9篇 |
1984年 | 10篇 |
1983年 | 8篇 |
1982年 | 7篇 |
1981年 | 3篇 |
1980年 | 2篇 |
1979年 | 1篇 |
1978年 | 1篇 |
1975年 | 1篇 |
1974年 | 1篇 |
1956年 | 1篇 |
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
1.
为了减小传统的最差情况设计方法引入的电压裕量,提出了一种变化可知的自适应电压缩减(AVS)技术,通过调整电源电压来降低电路功耗.自适应电压缩减技术基于检测关键路径的延时变化,基于此设计了一款预错误原位延时检测电路,可以检测关键路径延时并输出预错误信号,进而控制单元可根据反馈回的预错误信号的个数调整系统电压.本芯片采用SMIC180 nm工艺设计验证,仿真分析表明,采用自适应电压缩减技术后,4个目标验证电路分别节省功耗12.4%,11.3%,10.4%和11.6%. 相似文献
2.
For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (Ron,sp) of 2 mΩ cm2, which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively. 相似文献
3.
Mostafa Dellahi Hattab Maker Guillermo Botella Enrique Alameda-Hernandez Azeddine Mouhsen 《International Journal of Circuit Theory and Applications》2020,48(6):887-905
The three-phase four-wire shunt active power filter (SAPF) was developed to suppress the harmonic currents generated by nonlinear loads, and for the compensation of unbalanced nonlinear load currents, reactive power, and the harmonic neutral current. In this work, we consider instantaneous reactive power theory (PQ theory) for reference current identification based on the following two algorithms: the classic low-pass filter (LPF) and the second-order generalized integrator (SOGI) filter. Furthermore, since an important process in SAPF control is the regulation of the DC bus voltage at the capacitor, a new controller based on the Lyapunov function is also proposed. A complete simulation of the resultant active filtering system confirms its validity, which uses the SOGI filter to extract the reference currents from the distorted line currents, compared with the traditional PQ theory based on LPF. In addition, the simulation performed also demonstrates the superiority of the proposed approach, for DC bus voltage control based on the Lyapunov function, compared with the traditional proportional-integral (PI) controller. Both novel approaches contribute towards an improvement in the overall performance of the system, which consists of a small rise and settling time, a very low or nonexistent overshoot, and the minimization of the total harmonic distortion (THD). 相似文献
4.
《Microelectronics Journal》2015,46(11):1012-1019
This paper presents a voltage reference generator architecture and two different realizations of it that have been fabricated within a standard 0.18 μm CMOS technology. The architecture takes the advantage of utilizing a sampled-data amplifier (SDA) to optimize the power consumption. The circuits achieve output voltages on the order of 190 mV with temperature coefficients of 43 ppm/°C and 52.5 ppm/°C over the temperature range of 0 to 120°C without any trimming with a 0.8 V single supply. The power consumptions of the circuits are less then 500 nW while occupying an area of 0.2 mm2 and 0.08 mm2, respectively. 相似文献
5.
ABSTRACTThe RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n+-n-p-p+) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 1010 Wm?2 and the Si-based counterpart has lowest power density of order 106 Wm?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances. 相似文献
6.
中、高压变频器产量越来越多,但试验手段大多比较落后,一般采用带电机空转的方法。本文介绍了一个高压变频器试验平台,通过该平台可以对电压等级在3kV~10kV、功率在5000kW以下的变频器进行实载试验。 相似文献
7.
8.
随着集成电路规模的不断增大,电源网络的重要性日趋显著,电源网络的分布直接影响芯片的电压降(IR-drop)。一种布线后通过在空闲处插入电源桥和地桥的方法,可以在不增加芯片面积的情况下,改善IR-drop效应。实验结果表明在芯片布局利用率不高的情况下(70~75%),该方法可以使IR-drop得到明显的优化。 相似文献
9.
10.
介绍北方交通大学与比利时鲁汶大学、布鲁塞尔自由大学、比利时铁路公司合作,在巴黎至布鲁塞尔之间高速铁路线上的Antoing大桥进行的二次高速铁路桥梁动力试验。试验桥梁由跨度50m的多跨预应力混凝土简支槽型梁构成,试验中列车速度达265-310km/h。通过现场试验和实验结果分析,得到了桥梁的频率、振型、阻尼等自振特性,以及桥梁在高速列车作用下的动挠度、梁和桥墩的横向和竖向加速度、橡胶支座的相对位移、梁体的动应变等动力响应特性。试验经验和测试结果对于充实高速铁路桥梁动力分析理论、改进数值分析模型、验证计算结果、提高高速铁路桥梁的动力设计水平、保证行车安全,具有重要的意义。 相似文献