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1.
石油和天然气行业不断关注增材制造技术在航空航天和汽车行业的应用发展。研发了利用增材制造技术的超高膨胀封隔器,该封隔器的支承环系统由增材制造。增材制造设计大幅减少了支承系统的构件数量,同时显著提高了膨胀能力和额定压力。密封元件系统与增材制造支承环安装在一起,提供了极端膨胀比、零挤压间隙和对不规则孔的良好适应性。分析和测试结果表明:直径膨胀比高达111%,与常规封隔器相比,提高50%以上; 至少涵盖5种线重的套管(外径相同); 在148.89 ℃的温度下,密封元件能够保持压力68.95 MPa。介绍了增材制造技术、增材制造支承环概念、增材制造材料力学性能、密封元件系统优化和测试情况,以期给我国的完井作业提供借鉴。 相似文献
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Bulge is a defect that causes geometrical inaccuracy and premature failure in the innovative incremental sheet forming (ISF) process. This study has two-fold objectives: (1) knowing the bulging behavior of a Cu clad tri-layered steel sheet as a function of forming conditions, and (2) analyzing the bending effect on bulging in an attempt to identify the associated mechanism. A series of ISF tests and bending analysis are performed to realize these objectives. From the cause-effect analysis, it is found that bulge formation in the layered sheet is sensitive to forming conditions in a way that bulging can be minimized utilizing annealed material and performing ISF with larger tool diameter and step size. The bending under tension analysis reveals that the formation of bulge is an outgrowth of bending moment that the forming tool applies on the sheet during ISF. Furthermore, the magnitude of bending moment depending upon the forming conditions varies from 0.046 to 10.24 N·m/m and causes a corresponding change in the mean bulge height from 0.07 to 0.91 mm. The bending moment governs bulging in layered sheet through a linear law. These findings lead to a conclusion that the bulge defect can be overcome by controlling the bending moment and the formula proposed can be helpful in this regards. 相似文献
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1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm2 is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm2 array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall Vmin of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances. 相似文献
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P. A. Boucard L. Champaney 《International journal for numerical methods in engineering》2003,57(9):1259-1281
The aim of the present work is to develop an application of the LArge Time INcrement (LATIN) approach for the parametric analysis of static problems with multiple contacts. The methodology adopted was originally introduced to solve viscoplastic and large‐transformation problems. Here, the applications concern elastic, quasi‐static structural assemblies with local non‐linearities such as unilateral contact with friction. Our approach is based on a decomposition of the assembly into substructures and interfaces. The interfaces play the vital role of enabling the local non‐linearities, such as contact and friction, to be modelled easily and accurately. The problem on each substructure is solved by the finite element method and an iterative scheme based on the LATIN method is used for the global resolution. More specifically, the objective is to calculate a large number of design configurations. Each design configuration corresponds to a set of values of all the variable parameters (friction coefficients, prestress) which are introduced into the mechanical analysis. A full computation is needed for each set of parameters. Here we propose, as an alternative to carrying out these full computations, to use the capability of the LATIN method to re‐use the solution to a given problem (for one set of parameters) in order to solve similar problems (for the other sets of parameters). Copyright © 2003 John Wiley & Sons, Ltd. 相似文献
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在双光束激光直写系统中,衍射光变图像的光刻是逐像素点进行的.本文提出在该系统中采用狭缝获得光栅线来进行衍射图形的直写,利用一种改进的矢量文件格式,使平台沿着垂直光栅线的方向运动,获得连续的多光点同时直写,直写后的衍射光栅线是连续的,系统的运行效率是逐点光刻的几十倍.编写了与DXF文件的接口直写控制程序,给出了实验结果. 相似文献
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系统备份及其误区分析 总被引:1,自引:0,他引:1
张军华 《微电子学与计算机》2002,19(9):34-35
文章对系统备份的几个主要方面进行了讨论,并在此基础上,对系统备分的若干认识误区进行了分析。 相似文献