Integral barrier Lyapunov function-based adaptive fuzzy output feedback control for nonlinear delayed systems with time-varying full-state constraints

In this article, an adaptive fuzzy output feedback control method is presented for nonlinear time-delay systems with time-varying full state constraints and input saturation. To overcome the problem of time-varying constraints, the integral barrier Lyapunov functions (IBLFs) integrating with dynamic surface control (DSC) are applied for the first time to keep the state from violating constraints. The effects of unknown time delays can be removed by using designed Lyapunov-Krasovskii functions (LKFs). An auxiliary design system is introduced to solve the problem of input saturation. The unknown nonlinear functions are approximated by the fuzzy logic systems (FLS), and the unmeasured states are estimated by a designed fuzzy observer. The novel controller can guarantee that all signals remain semiglobally uniformly ultimately bounded and satisfactory tracking performance is achieved. Finally, two simulation examples illustrate the effectiveness of the presented control methods.     

Power Input Prediction in Agitated Gas‐Liquid Contactors with Non‐coalescent Batch

Volumetric mass transfer coefficients, k_La, just as power input are considered as essential parameters for mechanically agitated gas‐liquid contactors in relation to their optimization and design. The knowledge of power input is crucial for the prediction of other mass transfer characteristics. A power input correlation is created for the industrial design of the process with a non‐coalescent batch that would be appropriate for a broad range of operational conditions. The recommended resulting correlation is able to predict the power input for impellers in industrial‐scale design for a significant scope of operational conditions.     

基于关键路径延时检测的自适应电压缩减技术

为了减小传统的最差情况设计方法引入的电压裕量,提出了一种变化可知的自适应电压缩减(AVS)技术,通过调整电源电压来降低电路功耗.自适应电压缩减技术基于检测关键路径的延时变化,基于此设计了一款预错误原位延时检测电路,可以检测关键路径延时并输出预错误信号,进而控制单元可根据反馈回的预错误信号的个数调整系统电压.本芯片采用SMIC180 nm工艺设计验证,仿真分析表明,采用自适应电压缩减技术后,4个目标验证电路分别节省功耗12.4％,11.3％,10.4％和11.6％.     

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.     

Three-phase four-wire shunt active power filter based on the SOGI filter and Lyapunov function for DC bus control

The three-phase four-wire shunt active power filter (SAPF) was developed to suppress the harmonic currents generated by nonlinear loads, and for the compensation of unbalanced nonlinear load currents, reactive power, and the harmonic neutral current. In this work, we consider instantaneous reactive power theory (PQ theory) for reference current identification based on the following two algorithms: the classic low-pass filter (LPF) and the second-order generalized integrator (SOGI) filter. Furthermore, since an important process in SAPF control is the regulation of the DC bus voltage at the capacitor, a new controller based on the Lyapunov function is also proposed. A complete simulation of the resultant active filtering system confirms its validity, which uses the SOGI filter to extract the reference currents from the distorted line currents, compared with the traditional PQ theory based on LPF. In addition, the simulation performed also demonstrates the superiority of the proposed approach, for DC bus voltage control based on the Lyapunov function, compared with the traditional proportional-integral (PI) controller. Both novel approaches contribute towards an improvement in the overall performance of the system, which consists of a small rise and settling time, a very low or nonexistent overshoot, and the minimization of the total harmonic distortion (THD).     

嵌入式盲文单手输入系统设计与实现

计算机录入编辑盲文是信息处理的特殊应用领域，是特殊教育中的重要研究课题。文中将盲文制作为特殊符号，通过制作字库，编写个性化码表，然后嵌入到主流输入法，从而实现盲文与汉字混排以及实现单手盲文输入。该系统具有易学易记性、盲文编码多样性、嵌入性强等优点，并通过实验证明输入盲文效率能提高5~6倍，在盲文出版、盲文印刷、盲文教学等领域有重要的应用价值。但盲文字符在不同平台(如智能手机)与不同操作系统兼容性问题还有待进一步研究开发。     

Voltage reference architectures for low-supply-voltage low-power applications

This paper presents a voltage reference generator architecture and two different realizations of it that have been fabricated within a standard 0.18 μm CMOS technology. The architecture takes the advantage of utilizing a sampled-data amplifier (SDA) to optimize the power consumption. The circuits achieve output voltages on the order of 190 mV with temperature coefficients of 43 ppm/°C and 52.5 ppm/°C over the temperature range of 0 to 120°C without any trimming with a 0.8 V single supply. The power consumptions of the circuits are less then 500 nW while occupying an area of 0.2 mm² and 0.08 mm², respectively.     

Estimation of power density in IMPATT using different materials

ABSTRACT

The RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n⁺-n-p-p⁺) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 10¹⁰ Wm^?2 and the Si-based counterpart has lowest power density of order 10⁶ Wm^?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances.     

测试(试井)成果影响因素浅析

随着测试技术的发展、测试质量及资料解释水平的提高，测试（试井）成果的可靠程度越来越受到重视。影响解释成果的环节和因素很多，从客观和主观两方面分析其主要因素，找出症结所在，从而完善现场环节，完善资料解释过程，提高测试技术及解释水平。     

大气状态下AFM阳极氧化加工Si的研究

Si纳米氧化线是构筑基于Si的纳米器件的基础。通过AFM针尖诱导阳极氧化加工的n型Si(100)的实验得到凸出的n型Si(100)氧化物高度和偏置电压成线性关系,与针尖扫描速度成负对数关系,并在前人的基础上深化了AFM针尖诱导氧化加工的机理和理论模型,得到了合适的加工条件为偏压8 V和扫描速度1μm/s。