Near-infrared photodetection with a diruthenium complex having redox-switchable wavelength response

We report on the electrochromic behavior of a dinuclear ruthenium complex, which provides high environmental stability together with an intense absorption maximum at 1237 nm in solution in its +3 oxidation state. To verify its optoelectronic properties, we used this complex as the photoactive material in a planar photodetector prototype for near-infrared light pulses, succeeding in the detection of a train of light pulses at a wavelength of 1280 nm.     

基于Labview的紫外光探测器自动化测试与分析系统

基于NI公司的Labview 8设计了一套功能全面的半导体紫外光电探测器参数自动化测试与分析系统,将光路调整、仪器控制、数据采集、数据处理和结果呈现整合到一个软件操作平台上,解决了传统手动测量既繁琐又易出错的问题,可测量样品的光电流或暗电流的伏安特性以及光谱响应.根据微弱信号的特殊测量要求,对测量装置和测量方法进行了优化设计,有效地降低了各种噪声的干扰,并针对不同量程仪器响应时间不同的问题,提供了时延的估测方法,提高了测量结果的可靠性和准确性.     

Exploring the effects of optically generated dipoles on organic photodetector infrared detection

Sensing from the ultraviolet–visible to the infrared is bringing more attentions recently. Here, we report the effects of optically generated dipoles within PTB7 layer on photocurrent and photoresponse in single wall carbon nanotube-based photodetectors. The observations in this work provide the direct evidence that optically generated dipoles within the PTB7 layer can be aligned by a built-in field, and then consequently affect dissociation of photo-excited electron-hole pairs in single wall carbon nanotubes. Additionally, PL (photoluminescence) of single wall carbon nanotubes can be appreciably quenched by optically generated dipoles in PTB7 layer. This quenched PL provides further information to back up photodetectivity increasing through dipoles alignment in PTB7 layer.     

N+P photodetector characterization using the quasi-steady state photoconductance decay method

When a material is irradiated, it becomes more electrically conductive due to the absorption of the electromagnetic radiation. As a result, the number of free electrons and holes changes and raises its electrical conductivity. A simple but interesting phenomenon to characterise a fabricated n⁺p photodetector in order to determine its linearity (photoresponse) and photoconductance was employed. Using the transient decay when the irradiation source is switched off, the minority carrier concentration, effective lifetime and surface recombination velocity present at the surface of the detector were measured.     

Near-Infrared Light Triggered Self-Powered Mechano-Optical Communication System using Wearable Photodetector Textile

The merging of humans and machines depends on the contact sensor medium used. However, this contact interaction inevitably leads to mechanical loss. Photodetectors are cutting-edge tools in optical communication that use controlled lighting to achieve efficient signal conversion to drive mechano–optical communication systems and provide an innovative interface for the Internet of Things services. Here, a self-powered, non-contact mechano–optical communication system based on a wearable Te@TeSe photodetector textile is presented, which encodes near-infrared light to modulate robotic manipulator actions. The wearable Te@TeSe photodetector textile enhanced the photocurrent and responsivity by 400 times compared to a pristine Te nanowire (NW) array. The type II heterojunction of Te@TeSe NWs is proved by first-principles calculations and simulated, providing insights on photogenic carrier transmission in Te@TeSe NWs. This system shows the possibility of duplicate real-time execution of mechanical gestures in virtual environments and paves the way for advanced optical devices applied to information transmission and mechano–optical communication.     

Concept and demonstration of an intermediate band tandem device for solar energy conversion

We have realized a tandem solar cell design that combines a pin‐junction with a photovoltaic intersubband absorber. This concept allows harvesting light in the visible range and the near‐ and mid‐infrared at the same time, and theoretically, energy conversion efficiencies beyond the Shockley–Queisser‐limit could be achieved. A test structure was grown, and the operation of this concept could be confirmed, in principal with an optical two‐beam experiment. The basic characteristics of the device can be explained with an equivalent circuit design that consists of three individual cells, and we find an obvious analogy to the concept of the intermediate band solar cell with noteworthy advantages at some points. Our results show, that for a working device it is crucial to adjust the properties of the photovoltaic intersubband absorber for optimal charge separating performance at the working point of the solar cell. Copyright © 2015 John Wiley & Sons, Ltd.     

Terahertz Semiconductor Quantum Well Devices

For eventually providing terahertz science with compact and convenient devices,terahertz (1～10THz) quantum-well photodetectors and quantum-cascade lasers are investigated. The design and projected detector performance are presented together with experimental results for several test devices,all working at photon energies below and around optical phonons. Background limited infrared performance (BLIP) operations are observed for all samples (three in total) ,designed for different wavelengths. BLIP temperatures of 17,13, and 12K are achieved for peak detection frequencies of 9.7THz(31μm) ,5.4THz(56μm) ,and 3.2THz(93μm) ,respectively. A set of THz quantum-cascade lasers with identical device parameters except for doping concentration is studied. The δ-doping density for each period varies from 3.2 × 1010 to 4. 8 × 1010cm-2. We observe that the lasing threshold current density increases monotonically with doping concentration. Moreover, the measurements for devices with different cavity lengths provide evidence that the free carrier absorption causes the waveguide loss also to increase monotonically. Interestingly the observed maximum lasing temperature is best at a doping density of 3.6 × 1010cm-2.     

RCE光电探测器顶部DBR的优化

对研制的 VCSEL 结构外延片制成的谐振腔增强型 (简称 RCE)光电探测器进行了物理分析和实验研究 ,由于 VCSEL 与 RCE光电探测器对谐振腔反射镜的反射率要求不同 ,通过腐蚀 VCSEL 器件顶部 DBR,改变顶镜反射率 ,能够得到量子效率峰值和半宽优化兼容的 RCE光电探测器 ,实现 VCSEL 与 RCE探测器的单片集成 .     

量子阱红外探测器掺杂阱中能级的计算

量子阱中能级位置的确定是获得量子阱红外探测器其它设计参数的基础。为了提供足够的载流子跃迁,阱层一般为重掺杂层。重掺杂使半导体材料禁带宽度变窄,从而改变量子阱中能级的位置。通过对不同温度、量子阱区不同掺杂浓度条件下的量子阱材料PL 谱进行测量,得出PL 谱峰值波长对应的电子跃迁峰值能量,它与阱中基态能级的位置有关。分别计算了考虑和不考虑禁带变窄效应时的电子跃迁峰值能量,并与实验结果相比较,可以看出考虑禁带变窄效应时与实验结果相吻合,因此掺杂量子阱区能级的计算需要考虑禁带变窄效应,这样可以较为精确的得出阱中能级的位置。