Advanced Characterization and Optimization of NiOx:Cu-SAM Hole-Transporting Bi-Layer for 23.4% Efficient Monolithic Cu(In,Ga)Se2-Perovskite Tandem Solar Cells

The performance of five hole-transporting layers (HTLs) is investigated in both single-junction perovskite and Cu(In, Ga)Se₂ (CIGSe)-perovskite tandem solar cells: nickel oxide (NiO_x,), copper-doped nickel oxide (NiO_x:Cu), NiO_x+SAM, NiO_x:Cu+SAM, and SAM, where SAM is the [2-(3,-6Dimethoxy-9H-carbazol-9yl)ethyl]phosphonic acid (MeO-2PACz) self-assembled monolayer. The performance of the devices is correlated to the charge-carrier dynamics at the HTL/perovskite interface and the limiting factors of these HTLs are analyzed by performing time-resolved and absolute photoluminescence ((Tr)PL), transient surface photovoltage (tr-SPV), and X-ray/UV photoemission spectroscopy (XPS/UPS) measurements on indium tin oxide (ITO)/HTL/perovskite and CIGSe/HTL/perovskite stacks. A high quasi-Fermi level splitting to open-circuit (QFLS-V_oc) deficit is detected for the NiO_x-based devices, attributed to electron trapping and poor hole extraction at the NiO_x-perovskite interface and a low carrier effective lifetime in the bulk of the perovskite. Simultaneously, doping the NiO_x with 2% Cu and passivating its surface with MeO-2PACz suppresses the electron trapping, enhances the holes extraction, reduces the non-radiative interfacial recombination, and improves the band alignment. Due to this superior interfacial charge-carrier dynamics, NiO_x:Cu+SAM is found to be the most suitable HTL for the monolithic CIGSe-perovskite tandem devices, enabling a power-conversion efficiency (PCE) of 23.4%, V_oc of 1.72V, and a fill factor (FF) of 71%, while the remaining four HTLs suffer from prominent V_oc and FF losses.     

Photocurrent enhancement of d.c. sputtered copper oxide thin films

Copper oxide (CuO) thin films with photocurrent as high as 25 μA/cm² were deposited on conductive glass substrates using d.c. reactive sputtering. This was the highest reported photocurrent for sputteredp- type copper oxide measured in the electrolyte KI. The photocurrent drastically increased up to 25 (μA/cm² as the sputtering pressure and the substrate temperature were increased up to 8.5 mbar and 192°C, respectively. All the synthesized films contained single phase of CuO in this range of pressure and substrate temperature. Variation of the photocurrent, photovoltage, structure and absorbance with deposition conditions were studied in detail.     

Investigation of P3HT/n-Si heterojunction using surface photovoltage spectroscopy

Surface photovoltage spectroscopy (SPS) was used to investigate the interactions of the interface between regioregular poly(3-hexylthiophene) (P3HT) and n-type single crystalline silicon. The SPS responses of silicon and the P3HT/n-Si heterojunction caused by band to band transition of silicon are 30 mV and 160 mV respectively. The band-bending in the silicon side of the P3HT/n-Si structure is larger than that of bare n-Si. The density of the interface states of the P3HT/n-Si heterojunction increased significantly after the deposition of P3HT. Based on the contact potential difference (CPD) transient results, charge transport and separation processes are fast in the silicon substrate and slow in the P3HT layer respectively.     

Junction formation of CuInSe2 with CdS: A comparative study of “dry” and “wet” interfaces

The junction formation of polycrystalline CuInSe₂ absorbers (CIS) with thermally evaporated CdS was investigated by high-resolution synchrotron X-ray photoelectron spectroscopy. The chemistry and electronics of the interfaces of Cd partial electrolyte treated CIS (“wet” processed) and clean, decapped CIS (“dry” processed) were compared. A valence band offset of 0.96(10) eV was determined in both cases. The Cd(Se,OH) surface layer induced by the wet Cd partial electrolyte process does not significantly modify the band alignment at the CIS/CdS heterointerface from the “dry”, vacuum-processed CIS/CdS interface.During the stepwise interface formation the energy converting capability of the CIS/CdS heterojunction was assessed by in situ surface photovoltage measurements at room temperature. The evolution of the surface photovoltage significantly differs for the “wet” and the “dry” interfaces and is discussed in relation to the function in solar cell devices.     

Interpretation of minority carrier diffusion length measurements in thin silicon wafers

Diffusion length of minority carriers measured in thin wafers reflects not only properties of the material but also the state of its surface and, consequently, becomes an effective quantity L_eff depending on the thickness of the sample. The function describing this dependence is presented here and compared with the data from surface photovoltage experiments. It allows one to find the correct diffusion length from measurement of two samples with different thicknesses.     

Ratchet effect study in Si/SiGe heterostructures in the presence of asymmetrical antidots for different polarizations of microwaves

In this work, we studied the photovoltage response of an antidot lattice to microwave radiation for different antidot parameters. The study was carried out in a Si/SiGe heterostructure by illuminating the antidot lattice with linearly polarized microwaves and recording the polarity of induced photovoltage for different angles of incidence. Our study revealed that with increased antidot density and etching depth, the polarity of induced photovoltage changed when the angle of incidence was rotated 90 degrees. In samples with large antidot density and/or a deeply etched antidot lattice, scattering was dominated by electron interaction with the asymmetrical potential created by semicircular antidots. The strong electron–electron interaction prevailed in other cases. Our study provides insight into the mechanism of interaction between microwaves and electrons in an antidot lattice, which is the key for developing an innovative ratchet-based device. Moreover, we present an original and fundamental example of antidot lattice etching through the use of a two-dimensional electron gas. This system deals with a hole lattice instead of an electron depletion in the antidot lattice region.     

锥状TiO2纳米带制备及光电性质研究

采用化学气相沉积法,利用金属钛片为钛源,在金属Pd颗粒的催化下原位生长了锥状TiO2纳米带。扫描电镜(SEM)、XRD和透射电镜(TEM)表征结果表明所制备的锥状TiO2纳米带长度为数十微米,接近基底的底端宽度为1~4μm,顶端形成几十纳米的尖端;此纳米带晶型为金红石结构;锥状TiO2纳米带生长方向是长度方向为[110],横向是[001]方向。对比实验验证了金属Pd颗粒对锥状TiO2纳米带的生长初期起着重要的作用。笔者认为纳米带生长的初期由VLS生长机制决定,而固态Ti原子的扩散对锥状纳米带的形成起着重要的作用。单根TiO2纳米带不同位置的微区拉曼谱均有442cm-1、604cm-1两个响应带,分别对应着TiO2金红石相Eg和A1g的拉曼活跃模式。表面光电压谱的研究发现锥状TiO2纳米带具有良好的光电特性,在光催化、光电器件等领域具有潜在应用前景。     

指数掺杂透射式GaAs光电阴极表面光电压谱研究

通过求解一维稳态少数载流子扩散方程,推导了指数掺杂和均匀掺杂的透射式GaAs光电阴极表面光电压谱理论方程。利用金属有机化学气相沉积(MOCVD)外延生长了发射层厚度相同、掺杂结构不同的两款透射式阴极材料。通过表面光电压谱实验测试和理论拟合发现指数掺杂结构在发射层厚度和后界面复合速率相同的情况下能够有效提高阴极电子扩散长度,这主要由于内建电场能够促使光生电子通过扩散和电场漂移两种方式向表面运动,从而最终提升阴极的发射效率和表面光电压谱。利用能带计算公式和电子散射理论对这两种不同结构材料的表面光电压谱进行了详细分析。     

Electronic characterization of heterojunctions by surface potential monitoring

An original approach for studying the formation of semiconductor heterojunctions and their electronic properties is discussed and illustrated. Monitoring the changes in the surface potential during the heterojunction formation lends itself to direct measurement of the band discontinuities, Debye length, and the width of the space-charge region at heterojunction interfaces. The contribution of an interface dipole is considered. The technique is demonstrated by a technologically significant experimental example.