摩擦强度对薄膜表面形态的作用:原子力显微镜下的观察

展示了摩擦强度对聚酰亚胺薄膜表面形态的影响，原子力显微图像显示，机械摩擦会使聚酰亚胺薄膜表面上形成微沟槽，这些沟槽的表面具有丰富的表面精细构造。原子显微图像还揭示了机械摩擦可以改变被磨擦聚酰亚胺膜的表面形态。     

A positive‐working photosensitive polyimide based on thermal cross‐linking and acidolytic cleavage

A novel positive‐working photosensitive polyimide (PSPI) based on a poly(hydroxyimide) (PHI), a crosslinking agent having vinyl ether groups, and a photoacid generator (PAG) was prepared. The PHI as a base resin of the three‐component PSPI was synthesized from 4,4′‐oxydiphthalic anhydride and 2,2′‐bis(3‐amino‐4‐hydroxyphenyl)hexafluoropropane through ring‐opening polymerization and subsequent thermal cyclization. 2,2′‐bis(4‐(2‐(vinyloxy)ethoxy)phenyl)propane (BPA‐DEVE) was used as a vinylether compound and diphenyliodonium 5‐hydroxynaphthalene‐1‐sulfonate was used as a PAG. The phenolic hydroxyl groups of the PHI and the vinyl ether groups of BPA‐DEVE are thermally crosslinked with acetal structures during prebake step, and the crosslinked PHI becomes completely insoluble in an aqueous basic solution. Upon exposure to UV light (365 nm) and subsequent postexposure bake (PEB), a strong acid generated from the PAG cleaves the crosslinked structures, and the exposed area is effectively solubilized in the alkaline developer. The dissolution behavior of the PSPI containing each 11.5 wt % of BPA‐DEVE and of the PAG was studied after UV exposure (365 nm) and PEB. It was found that the difference in dissolution rates between exposed and unexposed areas was enough to get high resolution. A fine positive pattern with a resolution of 5 μm in a 3.7‐μm‐thick film was obtained from the three‐component PSPI. © 2007 Wiley Periodicals, Inc. J Appl Polym Sci, 2008     

聚酰亚胺的改性

本文介绍了旨在克服聚酰亚胺某些性能缺陷的改性产品 ,其中包括可溶型、透明型、低热膨胀型、共缩聚型、功能型、高粘接型、加成型聚酰亚胺和聚酰亚胺 /无机纳米复合材料等品种的研究动向 ,指出目前应重点研究聚酰亚胺 /无机纳米复合材料     

Novel polymeric aromatic lithium sulfonylimides as salts for polymer electrolytes

Three new polymeric aromatic lithium sulfonylimides were used as salts in high molecular weight poly(ethylene oxide) (PEO) electrolytes. Their conductivity and electrochemical stability behaviors were investigated. The electrolytes with lithium poly[4,4′‐(hexafluoroisopropylidene)diphenoxy]sulfonylimide (LiPHFIPSI) showed a better conductive performance compared with the other two lithium salts. The best conductivity was obtained for PEO/LiPHFIPSI EO/Li = 16 (1.90 × 10^?4 S/cm at 60°C). Thermal analysis indicated that the salts effectively decreased the crystallinity of PEO. Moreover, the electrolytes also had good electrochemical stability and their oxidative potential was to 5.5 V versus Li/Li⁺. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 85: 1802–1805, 2002     

光纤光栅最佳切趾函数的研究

采用耦合模理论，给出了用传输矩阵法计算光纤Bragg光栅（FBG）特性的方法，进而得到了在不同切趾函数形式下的FBG反射谱的数值解。通过理论分析，给出了最佳切趾函数反射谱和群时延特性曲线。     

A copper/polyimide Metal-base packaging technology

A unique substrate MCPM (Mitsubishi Copper Polyimide Metal-base) technology has been developed by applying our basic copper/polyimide technology.¹ This new substrate technology MCPM is suited for a high-density, multi-layer, multi-chip, high-power module/package, such as used for a computer. The new MCPM was processed using a copper metal base (110 × 110 mm), full copper system (all layers) with 50-μm fine lines. As for pad metallizations for the IC assembly, we evaluated both Ni/Au for chip and wire ICs and solder for TAB ICs. The total number of assembled ICs is 25. To improve the thermal dispersion, copper thermal vias are simultaneously formed by electro-plating. This thermal via is located between the IC chip and copper metal base, and promotes heat dispersion. We employed one large thermal via (4.5 mm^?) and four small vias (1.0 mm^?) for each IC pad. The effect of thermal vias and/or base metal is simulated by a computer analysis and compared with an alumina base substrate. The results show that the thermal vias are effective at lowering the temperature difference between the IC and base substrate, and also lowering the temperature rise of the IC chip. We also evaluated the substrate’s reliability by adhesion test, pressure cooker test, etc.     

Highly Thermal Stable Polyimides Applied in Flexible Resistive Memory

Flexible memory devices are one of the most crucial elements in the wearable electronics. In this work, polyimides (PIs)-based flexible resistive memory devices with an excellent thermal and mechanical durability are demonstrated. Four kinds of functional PIs are derived from the heterocyclic diamines including 2,6-diaminodibenzo-p-dioxin (OODA) and 2,6-diaminothianthrene, and dianhydrides including 4,4′-(hexafluoroisopropylidene)diphthalic anhydride (6FDA) and 3,3′,4,4′-biphenyltetracarboxylic dianhydride. PI with diamine of OODA and dianhydride of 6FDA (PI(OODA_6FDA)) possesses outstanding thermal and mechanical properties with a high glass transition temperature of 352 °C, a low coefficient of thermal expansion of 28.1 ppm K⁻¹, and a high elongation at break of 10%. In addition, PI(OODA_6FDA)-based memory shows write-once-read-many behavior with a high on/off current ratio of 10⁶ and a stable data retention, attributed to the donor–acceptor charge transfer between the polymer chains. The retained current levels at a low resistive state can be observed even with thermal treatment at 200 °C for 24 h or 1000 times cyclic bending at a bending radius of 5 mm. These results demonstrate the potential of heterocyclic PIs for flexible resistive memory.     

化学交联聚酰亚胺隔膜增强锂离子电池性能研究

隔膜作为锂离子电池的重要组成部分,用于阻隔阴极和阳极直接接触,同时为锂离子在电极间的传输提供有效通道。聚酰亚胺隔膜因其具有充放电循环寿命长、机械强度适中、良好的电绝缘性能以及自熄能力等优点,而受到广泛关注。以对苯二甲胺作为交联剂,将聚酰亚胺隔膜进行化学交联,研究了交联时间与隔膜形貌、结构及性能之间的构效关系。随着交联时间的增加,隔膜的孔隙率和吸液率逐渐降低,电解液接触角和机械强度逐渐增大。电化学测试表明,随着交联时间的增加,隔膜的本体阻抗逐渐增大,进而离子电导率逐渐降低,而交联隔膜的界面阻抗均远小于未交联隔膜,且交联隔膜的电化学窗口也均大于未交联隔膜。通过组装半电池测试发现,交联隔膜所组装电池的倍率性能和循环性能均优于未交联隔膜,当交联时间为48 h时,电池性能表现最优,循环100次以后,放电比容量为130.2 mA·h/g,容量保留率为91.1%。     

聚酰亚胺/二氧化硅杂化膜的制备与介电性能的研究

采用溶胶-凝胶法制备了BTDA-ODA聚酰亚胺/SiO2杂化膜,利用红外分光光度计（FTIR）、热重分析仪（TGA）和透射电镜（TEM）研究了杂化膜的微观结构和热性能,并对杂化膜的介电常数（e）和介电损耗（tand）随SiO2粒子含量和电场频率的变化进行了分析和讨论。结果表明：杂化膜的介电常数和介电损耗随SiO2粒子含量的增加而增大,随电场频率的升高而逐渐降低,用考虑到粒子的形状因素和两相间相互作用的EMT模型可以预测聚酰亚胺/SiO2杂化膜的介电常数。