| Cu(In,Ga)Se2太阳电池缓冲层ZnS薄膜性质及应用 |
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| 引用本文： | 刘琪,冒国兵,敖建平.Cu(In,Ga)Se2太阳电池缓冲层ZnS薄膜性质及应用[J].半导体学报,2007,28(5):726-730. |
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| 作者姓名： | 刘琪 冒国兵 敖建平 |
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| 作者单位： | 安徽工程科技学院机械工程系，芜湖 241000;安徽工程科技学院机械工程系，芜湖 241000;南开大学光电子薄膜器件与技术研究所，天津 300071 |
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| 基金项目： | 国家高技术研究发展计划(863计划)
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安徽省高校青年教师科研项目
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安徽省教育厅自然科学基金 |
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| 摘 要： | 在含有ZnSO4,SC(NH2)2,NH4OH的水溶液中采用CBD法沉积ZnS薄膜,XRF和热处理前后的XRD测试表明,ZnS沉积薄膜为立方相结构,薄膜含有非晶态的Zn(OH)2.光学透射谱测试表明,制备的薄膜透过率(λ＞500nm)约为90%,薄膜的禁带宽度约为3.51eV.ZnS薄膜沉积时间对Cu(In,Ga)Se2太阳电池影响显著,当薄膜沉积时间在25～35min时,电池的综合性能最好.对比了不同缓冲层的电池性能,采用CBD-CdS为缓冲层的电池转换效率、填充因子、开路电压稍高于CBD-ZnS为缓冲层的无镉电池,但无镉电池的短路电流密度高于前者,两者转换效率相差2%左右.ZnS可以作为CIGS电池的缓冲层,替代CdS,实现电池的无镉化.
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| 关 键 词： | 化学水浴沉积 ZnS薄膜 CIGS太阳电池 太阳电池 缓冲层 薄膜性质 应用 Buffer Layers Applications Properties 替代 CIGS 电流密度 短路 无镉 开路电压 填充因子 转换效率 电池性能 综合 影响 沉积时间 禁带宽度 |
| 文章编号： | 0253-4177(2007)05-0726-05 |
| 修稿时间： | 11 4 2006 12:00AM |
Properties and Applications of ZnS Buffer Layers for Cu(In,Ga)Se2 Thin Film Solar Cells |
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| Liu Qi,Mao Guobing and Ao Jianping.Properties and Applications of ZnS Buffer Layers for Cu(In,Ga)Se2 Thin Film Solar Cells[J].Chinese Journal of Semiconductors,2007,28(5):726-730. |
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| Authors: | Liu Qi Mao Guobing and Ao Jianping |
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| Affiliation: | Department of Mechanical Engineering,Anhui University of Technology and Science,Wuhu 241000,China;Department of Mechanical Engineering,Anhui University of Technology and Science,Wuhu 241000,China;Institute of Photo-Electronic Thin Film Devices and Technology,Nankai University,Tianjin 300071,China |
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| Abstract: | We report the deposition and structural characterization of zinc sulfide (ZnS) thin films by chemical bath deposition (CBD) from a bath containing thiourea,ZnSO4,and ammonia in aqueous solution.The XRF and XRD analysis of as-deposited and annealed films show that the films have cubic ZnS structure with Zn(OH)2.Transmission measurements show that the optical transmittance is about 90% when the wavelength is over 500nm.The band gap (Eg) value of the deposited film is about 3.51eV.The effect of the ZnS buffer layer deposition time on device performance is studied.The result shows that the cell performance with a CBD-ZnS buffer layer deposited for 25~35min is best.The performance of CIGS solar cells with different buffer layers is compared.These results suggest that CBD-ZnS thin film can alternate CBD-CdS thin film as the buffer layer of CIGS solar cells. |
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| Keywords: | chemical bath deposition ZnS thin films Cu(In Ga)Se2 solar cells |
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