Simulations of Sub-100 nm Strained Si MOSFETs with High-κ Gate Stacks |
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Authors: | L. Yang J. R. Watling F. Adamu-Lema A. Asenov J. R. Barker |
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Affiliation: | (1) Device Modeling Group, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, G12 8LT, UK |
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Abstract: | By including soft-optical phonon scattering within an ensemble Monte Carlo simulator, this paper studies the impact of high-κ gate stacks on the performance of n-type Si and strained Si MOSFETs. The simulated devices replicate the performance of sub-100 nm Si and strained Si MOSFETs fabricated by IBM. The results indicate a significant reduction in the device performance due to the presence of a high-κ gate dielectric in both Si and strained Si transistors. |
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Keywords: | device simulation strained Si MOSFET high-κ |
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