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Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures |
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| Authors: | V G Tikhomirov N A Maleev A G Kuzmenkov Yu V Solov’ev A G Gladyshev M M Kulagina V E Zemlyakov K V Dudinov V B Yankevich A V Bobyl V M Ustinov |
| Affiliation: | 1. LETI St. Petersburg State Electrotechnical University, ul. Prof. Popova 5, St. Petersburg, 197376, Russia 2. Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia 3. Connector Optics LLC, ul. Shatelena 26à, St. Petersburg, 194021, Russia 4. Nanotechnology Research and Education Center, St. Petersburg Academic University, Russian Academy of Sciences, ul. Khlopina 8/3, St. Petersburg, 195220, Russia 5. Istok Scientific and Industrial Enterprise, ul. Vokzal’naya 2a, Fryazino, Moscow oblast, 141190, Russia |
| Abstract: | The results of numerical simulation and experimental study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures (p-HEMT) are considered. The possibility of correct simulation of static characteristics of actual device structures of p-HEMT transistors using the TCAD software package (SILVACO Inc.) is demonstrated. The essential necessity of using selective gate-groove etching to achieve controllable and reproducible device parameters is shown. |
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