Terahertz luminescence of GaAs-based heterostructures with quantum wells under the optical excitation of donors期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Terahertz luminescence of GaAs-based heterostructures with quantum wells under the optical excitation of donors

Authors:	N A Bekin R Kh Zhukavin K A Kovalevskii S G Pavlov B N Zvonkov E A Uskova V N Shastin

Affiliation:	(1) Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia;(2) Nizhni Novgorod Physicotechnical Research Institute, Nizhni Novgorod State University, pr. Gagarina 23/5, Nizhni Novgorod, 603950, Russia

Abstract:	Spontaneous emission from selectively doped GaAs/InGaAs:Si and GaAs/InGaAsP:Si heterostructures is studied in the frequency range of ～3–3.5 THz for transitions between the states of the two-dimensional subband and donor center (Si) under the condition of excitation with a CO₂ laser at liquid-helium temperature. It is shown that the population inversion and amplification in an active layer of 100–300 cm^?1 in multilayered structures with quantum wells (50 periods) and a concentration of doping centers N_D ≈ 10¹¹ cm^?2 can be attained under the excitation-flux density 10²³ photons/(cm² s).

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