Gd_2O_3掺杂对BaTiO_3陶瓷电性能的影响 |
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引用本文: | 郝素娥,韦永德,况冲. Gd_2O_3掺杂对BaTiO_3陶瓷电性能的影响[J]. 精细化工, 2002, 19(12): 717-719 |
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作者姓名: | 郝素娥 韦永德 况冲 |
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作者单位: | 哈尔滨工业大学,应用化学系,黑龙江,哈尔滨,150001 |
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基金项目: | 黑龙江省重点攻关项目(GB02A301),哈尔滨工业大学校基金资助项目(HIT.2000.19) |
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摘 要: | 采用溶胶-凝胶法制备了掺杂不同量Gd2O3(分别为0 001、0 002、0 003、0 005、0 007mol mol)的BaTiO3陶瓷,并对其电性能进行了研究。结果表明:Gd2O3掺杂使BaTiO3陶瓷的电阻率明显下降,当添加量为0 002mol mol时,电阻率最小,为1 27×105Ω·m;晶粒电阻随着温度的变化,呈现NTC效应,而晶界电阻随着温度的变化,呈现PTC效应,而且晶界电阻远远大于晶粒电阻,说明Gd2O3掺杂BaTiO3陶瓷的PTC效应是一种晶界效应;Gd2O3掺杂使BaTiO3陶瓷的介电常数和介电损耗在低频时明显增大,在高频时又明显降低。
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关 键 词: | BaTiO3 Gd2O3掺杂 溶胶-凝胶法 电性能 |
文章编号: | 1003-5214(2002)12-0717-03 |
Effects of Gd2O3 Doping on Electric Characteristics of BaTiO3 Ceramics |
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Abstract: | BaTiO3 ceramics doped with Gd2O3(the additive content was respectively 0001,0002,0003,0005,0007 mol/mol)were prepared by sol gel method.Effects of Gd2O3 doping on electric characteristics of BaTiO3 ceramics were studied.The results showed that the resistivity decreased obviously with the doping of Gd2O3,and when Gd2O3 content was 0002 mol/mol,the resistivity was the smallest,namely 127×105 Ω·m.The grain resistance exhibited NTC effect,but the grain boundary resistance showed PTC effect.The grain boundary resistance was larger than the grain resistance,so the PTC effect originated from the grain boundary.The dielectric constant (ε) and the dielectric loss (tan δ) of BaTiO3 ceramic doped with Gd2O3 increased at lower frequency and decreased at higher frequency obviously. |
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Keywords: | BaTiO_3 Gd_2O_3 doping sol-gel method electric characteristics |
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