Growth and magnetic properties of spin coated Co0.6Zn0.4Mn0.3Fe1.7O4 ultrathin films on silicon (100), (110) and (111) substrates

This paper reports growth of Co_0.6Zn_0.4Mn_0.3Fe_1.7O₄ (CZFMO) ultrathin films (thickness: 23–30 nm) by spin coating technique on silicon (100), (110) and (111) substrates. The deposited films were annealed at 700 °C for 1 h in the oxygen environment. All the films were found to be polycrystalline in nature. The CZFMO films were found to have minimal residual stress (13–50 MPa), which could be an encouraging feature for novel microwave miniaturized device applications. Room temperature magnetic measurements demonstrated completely saturated hysteresis loop with the highest squareness ratio (M _R /M _S )?~?60% for the film grown on Si (110) substrate. On the other hand CZFMO films on Si (100) and Si (111) substrates showed unsaturated hysteresis loops with M _R /M _S ~ 10 and 5%, respectively. The reason for the better magnetic properties of the ultrathin CZFMO film on Si (110) substrate seems to be its better crystalline quality and larger grain size compared to those of other films.