Beyond G-band: a 235 GHz InP MMIC amplifier |
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| Authors: | Dawson D Samoska L Fung AK Lee K Lai R Grundbacher R Po-Hsin Liu Raja R |
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| Affiliation: | Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA; |
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| Abstract: | We present results on an InP monolithic millimeter-wave integrated circuit (MMIC) amplifier having 10-dB gain at 235GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07-/spl mu/m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for S-parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230GHz. |
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