| CMOS工艺氧化膜完整性的评估 |
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| 引用本文： | 张德胜,顾瑛.CMOS工艺氧化膜完整性的评估[J].微电子学,1999,29(4):275-277. |
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| 作者姓名： | 张德胜 顾瑛 |
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| 作者单位： | 西安电子科技大学微电子所!陕西西安710071 |
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| 摘 要： | 提出了用阵列电容来监测氧化层的完整性。分析表明，从多个子列的氧化层电容漏电合格率的曲线可以求出氧化层完整性的表征因子Ｅ值（每个缺陷包含的单元数）。
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| 关 键 词： | CMOS工艺 氧化膜 可靠性评估 IC |
Evaluation on the Integrity of Oxides in CMOS Process |
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| ZHANG De sheng,GU Ying,HAN Xiao yong.Evaluation on the Integrity of Oxides in CMOS Process[J].Microelectronics,1999,29(4):275-277. |
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| Authors: | ZHANG De sheng GU Ying HAN Xiao yong |
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| Abstract: | The integrity of oxides is evaluated for CMOS process by the pinhole array capacitor. Analyses show that the characteristic factor for oxide integrity E , i.e. the number of elements per defect, can be calculated from oxide capacitor leak current yield curves. |
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| Keywords: | CMOS process Oxide Reliability evaluation |
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