p and n-type germanium layers grown using iso-butyl germane in a III-V metal-organic vapor phase epitaxy reactor

We report on the growth of n- and p-doped Germanium (Ge) on Ge substrates by Metal-Organic Vapor Phase Epitaxy (MOVPE). Iso-butyl germane, a liquid metal-organic source less toxic than Germane, is used as Ge precursor. We demonstrate the p-doping of Germanium by MOVPE using Trimethylgallium. The influence of the growth parameters for n and p-type doping is studied in order to optimize the morphology, the structural and the electrical properties of the Ge layers. The controlled growth of p and n doped Ge layers opens the possibility to realize totally epitaxially grown Ge diodes with improved performances, for example, for solar cell applications.