| 纳米晶存储特性的研究 |
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| 引用本文： | 唐文洁,刘之景,陶进绪,刘磁辉. 纳米晶存储特性的研究[J]. 半导体技术, 2004, 29(10): 15-19 |
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| 作者姓名： | 唐文洁 刘之景 陶进绪 刘磁辉 |
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| 作者单位： | 中国科学技术大学近代物理系,合肥,230026;中国科学技术大学电子工程与信息科学系,合肥,230026;中国科学技术大学物理系,合肥,230026 |
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| 摘 要： | 常温下硅纳米晶构成的MOSFET存储器具有低压、低功耗、体积小、高剂量和快速读写等优良特性,在ULSI中有重要的应用前景.它是当前ULSI研究中的一项热门专题,在国外一些著名刊物上屡见报道.本文介绍了这种器件的存储特性及其机理与最新研究进展.
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| 关 键 词： | 纳米晶 MOS型存储器 存储特性 |
| 文章编号： | 1003-353X(2004)10-0015-05 |
| 修稿时间： | 2004-01-08 |
Research on the Memory Characteristics of Nanocrystals |
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| TANG Wen-jiea,LIU Zhi-jinga,TAO Jin-xub,LIU Ci-huic. Research on the Memory Characteristics of Nanocrystals[J]. Semiconductor Technology, 2004, 29(10): 15-19 |
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| Authors: | TANG Wen-jiea LIU Zhi-jinga TAO Jin-xub LIU Ci-huic |
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| Abstract: | The floating-dot MOSFET memory based on Si nanocrystals is reported frequently, because it has many advantages such as low power consumption, high writing endurance, and small device size. This device is a promising candidate for future nonvolatile memories. In this paper, some main factors, which influence the memory characteristics of the MOS structures containing Si nanocrystals, are analyzed, the latest research progress in the subject is introduced. |
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| Keywords: | nanocrystal MOS memorizer memory characteristics |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
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