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X-ray reflectivity and atomic force microscopy studies of MOCVD grown AI_xGa_(1-x)N/GaN superlattice structures |
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| Authors: | Wang Yuanzhang Li Jinchai Li Shuping Chen Hangyang Liu Dayi Kang Junyong |
| Affiliation: | Wang Yuanzhang~(1,2, ),Li Jinchai~2,Li Shuping~2,Chen Hangyang~2,Liu Dayi~2,and Kang Junyong~2 1 Department of Mathematics and Physics,Xiamen University of Technology,Xiamen 361024,China 2 Fujian Key Laboratory of Semiconductor Materials and Applications,Xiamen University,Xiamen 361005,China |
| Abstract: | The grazing incidence X-ray reflectivity(GIXR) technique and atomic force microscopy(AFM) were exploited to obtain an accurate evaluation of the surfaces and interfaces for metalorganic chemical vapor deposition grown Al_xGa_(1-x)N/GaN superlattice structures.The X-ray diffraction results have been combined with reflectivity data to evaluate the layer thickness and Al mole fraction in the AlGaN layer.The presence of a smooth interface is responsible for the observation of intensity oscillation in GIXR,which... |
| Keywords: | metalorganic chemical vapor deposition interfaces surfaces nitrides superlattices high resolution X-ray diffraction |
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