| 阳极氧化铝工艺用于提高LED的出光效率 |
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| 引用本文： | 潘岭峰,李琪,刘志强,王晓峰,伊晓燕,王良臣,王军喜. 阳极氧化铝工艺用于提高LED的出光效率[J]. 半导体技术, 2011, 36(4): 283-286. DOI: 10.3969/j.issn.1003-353x.2011.04.007 |
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| 作者姓名： | 潘岭峰 李琪 刘志强 王晓峰 伊晓燕 王良臣 王军喜 |
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| 作者单位： | 中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083 |
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| 摘 要： | 使用纳米尺度的多孔阳极氧化铝(anodic aluminum oxide,AAO)作为刻蚀掩膜,刻蚀氧化铟锡(indium-tin oxide,ITO),形成纳米图形化表面,对于发光二极管的出光效率有明显的提升作用。AAO纳米掩膜的制备已广为报道,是纳电子学研究中常用的模板之一,工艺简单易行、可控性好。使用电感耦合反应离子刻蚀方法成功将纳米多孔结构转移到ITO上,形成ITO纳米结构。纳米图形化结构的引入使得器件有效减小了内部的全反射,在电压没有大幅提高,注入电流350 mA时,光学输出提高了7%。纳米尺度粗化结构LED与传统结构LED对比,提升了器件的外量子效率。
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| 关 键 词： | 发光二极管 氮化镓 阳极氧化铝 外量子效率 纳米图形化表面 |
Extraction Efficiency of Light-Emitting Diodes Improved by AAO |
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| Pan Lingfeng,Li Qi,Liu Zhiqiang,Wang Xiaofeng,Yi Xiaoyan,Wang Liangchen,Wang Junxi. Extraction Efficiency of Light-Emitting Diodes Improved by AAO[J]. Semiconductor Technology, 2011, 36(4): 283-286. DOI: 10.3969/j.issn.1003-353x.2011.04.007 |
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| Authors: | Pan Lingfeng Li Qi Liu Zhiqiang Wang Xiaofeng Yi Xiaoyan Wang Liangchen Wang Junxi |
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| Affiliation: | Pan Lingfeng,Li Qi,Liu Zhiqiang,Wang Xiaofeng,Yi Xiaoyan,Wang Liangchen,Wang Junxi(Institute of Semiconductors,Chinese Academy of Science,Beijing 100083,China) |
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| Abstract: | By using nano-scale anodic aluminum oxide as mask to etch indium tin oxide,the formation of nano-graphical surface was observed.The optical efficiency of the light-emitting diode was significantly increased.Using of anodic aluminum oxide nano-mask is widely reported.It is commonly used in nanoelectronics research.This technology is simple and controllable.By inductively coupled plasma reactive ion etcher method,the ITO nano-porous structure was to successfully transferred the surface of the ITO.The introduc... |
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| Keywords: | light-emitting diodes(LED) GaN anodic aluminum oxide external quantum efficiency nano-structure surface |
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